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http://dx.doi.org/10.4313/JKEM.2012.25.11.926

Effects of RTA on the Properties of SBNO Thin Film  

Kim, Jin-Sa (Department of Mechatronics, Chosun Colleng of Science & Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.11, 2012 , pp. 926-929 More about this Journal
Abstract
The $Sr_{0.7}Bi-{2.3}Nb_2O_9$(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at $300^{\circ}C$ of substrate temperature. And the SBNO thin films were annealed at $650{\sim}800^{\circ}C$ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above $750^{\circ}C$. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.
Keywords
Sputtering; Dielectric constant; Dielectric loss; RTA;
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