• 한국주조공학회지
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• 제22권3호
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• pp.114-120
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• 2002

A new titanium based alloy, Ti-10Ta-10Nb, has designed to examine the improved mechanical properties and biocompatibility. A specimen of titanium alloy was melted in a consumable vacuum arc furnace and homogenized at $1050^{\circ}C$ for 24 h. The effect of hot rolling on microstructure was estimated after rolling at $400^{\circ}C$ and $800^{\circ}C$ respectively. Surface of melted alloy by consumable vacuum arc melting was consisted of rough surface and it was changed to sound surface by coating of $ZrO_2$ slurry on copper mold surface. The hardness of Ti-10Ta-10Nb alloy increased with the amount of${\alpha}+{\beta}$ phase. Ti-10Ta-10Nb alloy showed $Widmanst{\"{a}}ten$ structure by hot rolling at $800^{\circ}C$ and in the rolling ${\beta}-region$ was negligible effects on microstructure refining.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.397-398
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• 2005

Ferroelectric Lithium niobate ($LiNbO_3$) thin films are fabricated on $Al_2O_3$(0001) substrate using Pulsed Laser Deposition (PLD). The various deposition conditions such as substrate temperature, oxygen pressure, and post annealing condition are investigated to deposite c-axis oriented $LiNbO_3$ thin films. Highly c-axis oriented thin films are obtained under the conditions of working pressure of 100 mTorr, deposition for 10 min at $450^{\circ}C$, and in-situ annealing for 40 min. The $LiNbO_3$ thin films are chemically etched after electric poling and the etched configurations are studied by scanning electron microscope (SEM).

• 한국결정성장학회지
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• 제9권1호
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• pp.20-22
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• 1999

본 연구에서는 floating zone 법에 의해서 고융조성의 순수한 $LiNbO_{3}$와 MgO가 5 mol% 첨가된 $LiNbO_{3}$ 단결정을 육성하였다. 화학양론조성의 $LiNbO_{3}$는 순수한 $LiNbO_{3}$를 VTE(vapor transport equilibration) 법에 의해 처리하여 준비하였고 위의 세 결정을 기본으로 하여 결정의 화학양론비와 첨가물($Mg^{2+}$)에 따른 $LiNbO_{3}$의 물성변화를 조사하였다. 공융조성의 $LiNbO_{3}$에서 높은 농도의 MgO 첨가는 화학양론조성 $LiNbO_{3}$와 유사한 특성을 보였다. Curie 온도는 공융조성의 순수한 $LiNbO_{3}$의 $1145^{\circ}C$에서 $1200^{\circ}C$ 이상으로 상승되었고 가시광선 영여그이 흡수단의 위치도 단차장쪽으로 10 nm 이상 이동하였다. MgO가 첨가된 결정의 $OH^{-}$ 흡수밴드의 위치는 40 nm 정도 단파장 영역으로 크게 이동하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Corrosion Science and Technology
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• 제21권4호
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• pp.250-257
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• 2022

Transition metal sulfide materials have emerged as a new anode material for Li secondary batteries owing to their high capacity and rate capability facilitated by fast Li-ion transport through the layered structure. Among these materials, niobium disulfide (NbS₂) has attracted much attention with its high electrical conductivity and high theoretical capacity (683 mAh g^-1). In this study, we propose a facile synthesis of Fe_xNbS₂/C composite via simple ball milling and heat treatment. The starting materials of FeS and Nb were reacted in the first milling step and transformed into an Fe-Nb-S composite. In the second milling step, activated carbon was incorporated and the sulfide was crystallized into Fe_xNbS₂ by heat treatment. The prepared materials were characterized by X-ray diffraction, electron spectroscopies, and X-ray photoelectron spectroscopy. The electrochemical test results reveal that the synthesized Fe_xNbS₂/C composite electrode demonstrates a high reversible capacity of more than 600 mAh g^-1, stable cycling stability, and excellent rate performance for Li-ion battery anodes.

• 한국결정성장학회지
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• 제7권3호
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• pp.400-405
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• 1997

KCl을 flux로 사용한 용융염 합성법을 이용하여 $Pb(Sc_{1/2}Nb_{1/2})O_3$ 분말을 제조하였다. $700^{\circ}C$부터 $850^{\circ}C$까지의 온도 범위에서 상형성 및 분말 상태의 변화를 조사하였다. 85$0^{\circ}C$에서 2시간동안 하소하였을 때 순수한 $Pb(Sc_{1/2}Nb_{1/2})O_3$상이 형성되었으며, 평군 입자 크기는 0.5 $\mu \textrm{m}$ 이하이었다. 시차열분석, X-선 회절 분석, 미세구조 변화를 통해 결과를 고찰하였다.

• 한국재료학회지
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• 제10권5호
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• pp.343-349
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• 2000

자전연소합성(SHS)법을 이용하여 탄소섬유와 티타늄, 지르코늄, 니오븀, 규소, 붕소, 중석, 몰리브덴의 분말로부터 여러 가지 섬유상 탄화물의 합성을 시도하였다. 티타늄과 지르코늄은 예열없이, 그 이외의 경우는 전기로 또는 화학로를 사용하여 예열하여 반응을일으킨 결과, TiC, ZrC, NbC, SiC, $B_4$C, WC,$ Mo_2$C 의 순수한 탄화물의 형성되었다. TiC, ZrC, NbC 및 $B_4$C 탄화물의 형상은 속의 빈 섬유상이었고, SiC는 보다 작은 입자와 미세 휘스커로 이루어진 섬유상을 하고 있었고 WC와 $Mo_2$C 는 비섬유상을 하고 있었다. 여러 가지 형상의 원인에 대하여 합리적 설명을 시도하였으며 정성적 메카니즘을 제안하였다.

• 열처리공학회지
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• 제20권6호
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• pp.323-328
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• 2007

This study has been investigated the effect of high temperature gas nitriding (HTGN) heat treatment of STS 444 (18Cr-0.01Ni-0.01C-0.2Nb) ferritic stainless steel in an atmosphere of nitrogen gas at the temperature range between $1050^{\circ}C\;and\;1150^{\circ}C$. The surface layer was changed into martensite and austenite with the nitrides of NbCrN by HTGN treatment. Due to the precipitation of nitrides and matrensite formation, the hardness of the surface layer showed $400Hv{\sim}530Hv$. The nitrogen concentration of the surface layer appeared as 0.05%, 0.12% and 0.92%, respectively, at $1050^{\circ}C,\;1100^{\circ}C\;and\;1150^{\circ}C$. When the nitrogen is permeated from surface to interior, Nb and Cr, which have strong affinities with nitrogen, also move from interior to surface. Therefore it is considered that this counter-current of atoms promotes the formation of NbCrN at the surface layer.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.559-562
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• 2011

In this study, the effect of $Nb_2O_5$ and sintering time on the positive temperature of coefficient of resistivity (PTCR) behavior of lead free $Ba_{0.99}(Bi_{0.5}Na_{0.5})_{0.01}TiO_3$ (BBNT) ceramics were investigated in order to fabricate a PTC thermistor with high $T_c$ temperature more than $140^{\circ}C$. In particular, BBNT ceramic doped with 0.1mol% $Nb_2O_5$ and sintered at $1350^{\circ}C$ for 4 h has significantly increased Curie temperature ($T_c$) of about $200^{\circ}C$, showed good PTCR behavior of room-temperature resistivity ($\rho_{rt}$) of $40{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $43.78{\times}10^3$ and a large resistivity temperature factor (${\alpha}$) of 16.1%/$^{\circ}C$. With increasing addition of $Nb_2O_5$ content, the $\rho_{rt}$ decreased to a minimum value of $40\;{\Omega}cm$ at 0.1mol% $Nb_2O_5$ and the $\rho_{rt}$ increased for x value over 0.1 mol%.

• 한국진공학회지
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• 제11권4호
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• pp.230-234
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• 2002

고온 급속 열처리를 행한 $LiNbO_3Si$/(100) 구조를 가지고 여러 가지 전극을 사용하여 금속/강유전체/반도체 커패시터를 제작하였으며, 제작한 커패시터의 비휘발성 메모리 응용 가능성을 확인하였다. MFS 커패시터의 C-V 특성 곡선에서는 LiNbO$_3$박막의 강유전성으로 인한 히스테리시스 특성이 관측되었으며, 1 MHz C-V 특성 곡선의 축적 영역에서 산출한 비유전율은 약 25 이었다. Pt 전극을 사용하여 제작한 커패시터에서는 인가 전계 500 kV/cm 범위에서 $1\times10^{-8}$ A/cm 이하의 우수한 누설전류 특성이 나타났다. midgap 부근에서의 계면 준위 밀도는 약 $10^{11}\textrm{cm}^2$.eV 이었으며, 잔류분극 값은 약 1.2 $\muC/\textrm{cm}^2$ 였다. Pt 전극과 A1 전극 모두 500 kHz 주파수의 바이폴러 펄스를 인가하면서 측정한 피로 특성에서 $10^{10}$ cycle 까지 측정된 잔류 분극 값이 초기 값과 같았다.