• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.206-211
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• 2017

$BiNbO_4:RE^{3+}$ (RE = Dy, Eu, Sm, Tb) phosphors were prepared by solid-state reaction at $1100^{\circ}C$ and their structural, photoluminescent, and morphological properties were investigated. XRD patterns exhibited that all the synthesized phosphors exhibited a triclinic system with a dominant (210) diffraction peak, irrespective of the type of activator ions. The surface morphologies of rare-earth-ion-doped $BiNbO_4$ phosphors were found to depend strongly on the type of activator ions. The $Eu^{3+}$ and $Dy^{3+}$ doped $BiNbO_4$ phosphors revealed a strong red (613 nm) emission resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ and a dominant yellow (575 nm) emission originating from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ respectively, which were the electric dipole transitions, indicating that the activator ions occupy sites of non-inversion symmetry in the $BiNbO_4$ phosphor. The main reddish-orange emission spectra of $Sm^{3+}$-doped $BiNbO_4$ phosphors were due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ (607 nm) magnetic dipole transition, indicating that the $Sm^{3+}$ ions were located at inversion symmetry sites in the $BiNbO_4$ host lattice. As for $Tb^{3+}$-doped phosphors, green emission was obtained under excitation at 353 nm and its CIE chromaticity coordinates were (0.274, 0.376). These results suggest that multicolor emission can be achieved by changing the type of activator ions incorporated into the $BiNbO_4$ host crystal.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.346-349
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• 2003

Microwave dielectric characteristics and physical properties of the new Zr$_{1-x}$ (Bn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ (0.2$\leq$x$\geq$ 1.0) system have been investigated as a function of the amount of Bn$_{1}$3/Nb$_{2/3}$ $O_2$substitution. With increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content (x), two phase regions were observed: $\alpha$-Pb $O_2$ solid solution (x<0.4), mixture of the rutile type Zn$_{1}$3/Nb$_{2/3}$Ti $O_4$ and the $\alpha$-Pb $O_2$ solid solution (x$\geq$0.4). In the$\alpha$-Pb $O_2$solid solution region below x<0.4, the Q.f$_{0}$ value sharply increased and the Temperature Coefficient of the Resonant Frequency(TCF) decreased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ contents while dielectric constant (K) showed nearly same value. In the mixture region above x$\geq$4, the dielectric constant and TCF increased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content. Zr$_{1-x}$ (Zn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ materials have excellent microwave dielectric properties with K=44.0, Q.f$_{0}$ : 41000 GHz and TCF =-3.0 ppm/$^{\circ}C$ at x=0.35.=0.35. x=0.35.=0.35.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.49-52
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• 2006

Periodic electric field assisted poling low loss (${\sim}0.1dB/cm$) single-mode Ti-diffused waveguides in $LiNbO_3$ has been achieved using a periodically patterned electrode on the +Z surface of Ti : $LiNbO_3$ crystal and homogeneous LiCl solution. Using selective chemical etching, we confirmed the periodic (${\sim}16{\mu}m$) domain inverted structure and measured SH (second harmonic) properties of fabricated periodically poled Ti : $LiNbO_3$ waveguides.

• Journal of Korean Neurosurgical Society
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• v.63 no.6
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• pp.707-716
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• 2020

Objective : The function of B7H3, a member of the B7 family of proteins, in neuroblastoma (NB) remains poorly characterized. Here we examine the expression pattern of B7H3 in clinical NB specimens and characterize the phenotype of B7H3 knock-down in NB cell line. Methods : Immunohistochemical (IHC) staining was carried out to assess the expression of B7H3 in clinical NB specimens. Survival association was analyzed using five Gene Expression Omnibus (GEO) datasets (GSE85047, GSE45480, GSE62564, GSE16476, GSE49710). Clonogenic survival and flow cytometry were performed after B7H3 knockdown to assess the cellular proliferation and cell survival in vitro. Impact of B7H3 silencing on NB growth was examined in vivo using the SH-SY5Y xenograft model. Results : On IHC staining, B7H3 was widely expressed in clinical NB specimens. Analysis of the transcriptional profiles of five GEO datasets clinically annotated NB specimens revealed that decreased B7H3 expression was associated with improved overall survival. B7H3 knockdown suppressed the proliferation of the SH-SY5Y NB model in vitro and in vivo. Cell cycle analysis revealed that B7H3 silencing induced G1/S arrest. This arrest was associated with the suppression of E2F1 expression and induction of Rb expression. Conclusion : Our results demonstrate that B7H3 expression correlate with clinical survival in NB patients. Preliminary studies suggest that B7H3 may mediate the G1/S transition.

• Progress in Superconductivity
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• v.8 no.2
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• pp.181-185
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• 2007

For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1713-1716
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• 1999

PSN-PT 2성분계 압전세라믹스의 상도로부터 유전적, 압전적 특성이 양호한 MPB (Morphotropic phase boundary)부근의 조성을 선택하여 도너 도펀트인 $Nb_2O_5$와 억셉터 도펀트인 $Fe_2O_3$를 각각 $0{\sim}9wt%$ 첨가하여 유전특성을 비교, 연구해보았다 시편모두 $1250^{\circ}C$이상에서 이론밀도의 96%이상의 값을 얻을 수 있었고 상온, 1kHz에서 $Fe_2O_3$의 경우 0.1wt% 첨가된 시편에서 ${\varepsilon}_r=2054$의 최대 비유전율이 나타났으며, 0.7wt% 첨가된 시편에서는 $tan{\delta}$=0.49%의 최소 유전 손실값을 얻었다. 도펀트가 첨가됨에 따라 ${\varepsilon}_r$는 점점 감소하는 경향을 보였으며 큐리온도 Tc는 $Fe_2O_3$의 경우에서 더 큰 값이 나타났다. $Nb_2O_5$의 경우 도펀트의 증가에 따라 완만한 Relaxor의 형태로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.778-781
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• 2002

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field$(H_k)$ as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C}$ respectively for 2 hours. Anisotropy field$(H_k)$ of film is measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb film is decreased due to the skin effect with increasing a thickness of the CoZrNb film, and hence its driving frequency is lowered. And, it was examined on the permeability and impedance to fabricate the MI sensor which acts at a low frequency by thickening a CoZrNb film relatively.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.190-195
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• 1993

새로운 Fe기 초미세 결정립합금의 제조 가능성 및 자기특성에 관하여 조사하였다. 고포화자화 (Fe.$_{85}$Co.$_{15}$ )$_{80}$B$_{20}$ 비정질합금에서 천이금속을 약 10 at.% Al으로 치환한 (Fe.$_{85}$ Co.$_{15}$ )$_{70}$B$_{20}$Al$_{10}$ 합금은 급속응고에 의하여 비정질 기지내에 직접 .alpha. -Fe(Co)의 석출이 가능하다. 또한 (Fe.$_{85}$Co.$_{15}$ )$_{70}$B$_{20}$Al$_{10}$합금에 2~6 at.% Nb의 첨가는 급속 응고시 결정립성장을 억제하고 포화자왜를 약 6ppm이하로 감소시켜 자기 특성을 개선시킨다. 열처리에 의한 자기 특성은 Nb의 치환량이 증가할 수록 감소한다. 400 .deg. C에서 1시간 열처리한 (Fe.$_{85}$Co.$_{15}$ )$_{70}$ B$_{18}$ Al$_{10}$Nb$_{2}$합금은 평균 약 8nm이하의 .alpha. -Fe(Co) 결정립으로 구성된 초미세 결정립합금 으로 제조가 가능하며, 포화자속밀도, 철손 및 투자율 (f=50 kHz, B$_{m}$ =0.2 T)이 각각 1.2 T, 12W/kg 및 2.5 *$10^{4}$으로 가장 우수하다. 이는 Fe-Si-B-Nb-Cu 초미세결정립합금 및 영자왜 Co기 비정질합금과 거의 같은 자기특성을 나타낸다.다..다.다..낸다.다..

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.566-569
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• 2002

In general, Pb-based complex perovskite powders have not been directly prepared because pyrochlore that is secondary phase appears. In this study, we tried to prepare Pb(Fe$_{1}$2/Nb$_{1}$2/)O$_3$ which was used to the electronic multicomponent by supercitical fluid method in order to fabricate very active powder not through pyrochlore.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.