• Journal of Korea Foundry Society
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• v.22 no.3
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• pp.114-120
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• 2002

A new titanium based alloy, Ti-10Ta-10Nb, has designed to examine the improved mechanical properties and biocompatibility. A specimen of titanium alloy was melted in a consumable vacuum arc furnace and homogenized at $1050^{\circ}C$ for 24 h. The effect of hot rolling on microstructure was estimated after rolling at $400^{\circ}C$ and $800^{\circ}C$ respectively. Surface of melted alloy by consumable vacuum arc melting was consisted of rough surface and it was changed to sound surface by coating of $ZrO_2$ slurry on copper mold surface. The hardness of Ti-10Ta-10Nb alloy increased with the amount of${\alpha}+{\beta}$ phase. Ti-10Ta-10Nb alloy showed $Widmanst{\"{a}}ten$ structure by hot rolling at $800^{\circ}C$ and in the rolling ${\beta}-region$ was negligible effects on microstructure refining.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.397-398
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• 2005

Ferroelectric Lithium niobate ($LiNbO_3$) thin films are fabricated on $Al_2O_3$(0001) substrate using Pulsed Laser Deposition (PLD). The various deposition conditions such as substrate temperature, oxygen pressure, and post annealing condition are investigated to deposite c-axis oriented $LiNbO_3$ thin films. Highly c-axis oriented thin films are obtained under the conditions of working pressure of 100 mTorr, deposition for 10 min at $450^{\circ}C$, and in-situ annealing for 40 min. The $LiNbO_3$ thin films are chemically etched after electric poling and the etched configurations are studied by scanning electron microscope (SEM).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.20-22
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• 1999

The effect of dopant and stoichiometry on the physical and optical properties of $LiNbO_{3}$ were studied. We prepared three samples, undoped, MgO doped $LiNbO_{3}$ with congruent composition and near-stoichiometric $LiNbO_{3}$. Dielectric constant and transmittance in UV/VIS/IR light range were measured. The results showed that the features for high [Li]/[Nb] were similar to those for low [Li]/[Nb] but with high [Mg].

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Corrosion Science and Technology
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• v.21 no.4
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• pp.250-257
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• 2022

Transition metal sulfide materials have emerged as a new anode material for Li secondary batteries owing to their high capacity and rate capability facilitated by fast Li-ion transport through the layered structure. Among these materials, niobium disulfide (NbS₂) has attracted much attention with its high electrical conductivity and high theoretical capacity (683 mAh g^-1). In this study, we propose a facile synthesis of Fe_xNbS₂/C composite via simple ball milling and heat treatment. The starting materials of FeS and Nb were reacted in the first milling step and transformed into an Fe-Nb-S composite. In the second milling step, activated carbon was incorporated and the sulfide was crystallized into Fe_xNbS₂ by heat treatment. The prepared materials were characterized by X-ray diffraction, electron spectroscopies, and X-ray photoelectron spectroscopy. The electrochemical test results reveal that the synthesized Fe_xNbS₂/C composite electrode demonstrates a high reversible capacity of more than 600 mAh g^-1, stable cycling stability, and excellent rate performance for Li-ion battery anodes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.400-405
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• 1997

Lead scandium niobate powders were prepared by a molten salt synthesis method using KCl as a flux. Variations in phase formation and particle morphology were investigated for the temperature range $700^{\circ}C$ to $850^{\circ}C$. Pure $Pb(Sc_{1/2}Nb_{1/2})O_3$ perovskite phase was formed at $850^{\circ}C$ after 2hrs and the average particle size of powder was below 0.5 $\mu\textrm{m}$. The results are discussed with respect to DTA, X-ray diffraction, and microstructural characterization data.

• Korean Journal of Materials Research
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• v.10 no.5
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• pp.343-349
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• 2000

Fabrication of various carbide fibers from carbon fibers and elementary powders of Ti, Zr, Nb, Zi, W, B, and Mo by self-propagating high temperature synthesis was attempted. It was found the almost pure phase of TiC, ZrC, NbC, SiC, $B_4$C, and $Mo_2$C carbides were successfully produced. The three types of morphologies were ob-served, TiC, ZrC, NbC, and $B_4$C had a hollow-type fibrous shape. SiC had fiber shape consisting of smaller particles and fine whiskers. WC and $Mo_2$C had non-fibrous shapes. The reason for the different morphologies was explained. The formation mechanism of hollow fibers was suggested.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.6
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• pp.323-328
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• 2007

This study has been investigated the effect of high temperature gas nitriding (HTGN) heat treatment of STS 444 (18Cr-0.01Ni-0.01C-0.2Nb) ferritic stainless steel in an atmosphere of nitrogen gas at the temperature range between $1050^{\circ}C\;and\;1150^{\circ}C$. The surface layer was changed into martensite and austenite with the nitrides of NbCrN by HTGN treatment. Due to the precipitation of nitrides and matrensite formation, the hardness of the surface layer showed $400Hv{\sim}530Hv$. The nitrogen concentration of the surface layer appeared as 0.05%, 0.12% and 0.92%, respectively, at $1050^{\circ}C,\;1100^{\circ}C\;and\;1150^{\circ}C$. When the nitrogen is permeated from surface to interior, Nb and Cr, which have strong affinities with nitrogen, also move from interior to surface. Therefore it is considered that this counter-current of atoms promotes the formation of NbCrN at the surface layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.559-562
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• 2011

In this study, the effect of $Nb_2O_5$ and sintering time on the positive temperature of coefficient of resistivity (PTCR) behavior of lead free $Ba_{0.99}(Bi_{0.5}Na_{0.5})_{0.01}TiO_3$ (BBNT) ceramics were investigated in order to fabricate a PTC thermistor with high $T_c$ temperature more than $140^{\circ}C$. In particular, BBNT ceramic doped with 0.1mol% $Nb_2O_5$ and sintered at $1350^{\circ}C$ for 4 h has significantly increased Curie temperature ($T_c$) of about $200^{\circ}C$, showed good PTCR behavior of room-temperature resistivity ($\rho_{rt}$) of $40{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $43.78{\times}10^3$ and a large resistivity temperature factor (${\alpha}$) of 16.1%/$^{\circ}C$. With increasing addition of $Nb_2O_5$ content, the $\rho_{rt}$ decreased to a minimum value of $40\;{\Omega}cm$ at 0.1mol% $Nb_2O_5$ and the $\rho_{rt}$ increased for x value over 0.1 mol%.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.230-234
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• 2002

Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.