• Title/Summary/Keyword: Nb-doping

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HIGH BURNUP FUEL TECHNOLOGY IN KOREA

  • Song, Kun-Woo;Jeong, Yong-Hwan;Kim, Keon-Sik;Bang, Je-Geon;Chun, Tae-Hyun;Kim, Hyung-Kyu;Song, Kee-Nam
    • Nuclear Engineering and Technology
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    • v.40 no.1
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    • pp.21-36
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    • 2008
  • High bum-up fuel technology has been developed through a national R&D program, which covers key technology areas such as claddings, $UO_2$ pellets, spacer grids, performance code, and fuel assembly tests. New cladding alloys were developed through alloy designs, tube fabrication, out-of-pile test and in-reactor test. The new Zr-Nb tubes are found to be much better in their corrosion resistance and creep strength than the Zircaloy-4 tube, owing to an optimized composition and heat treatment of the new Zr-Nb alloys. A new fabrication technology for large grain $UO_2$ pellets was developed using various uranium oxide seeds and a micro-doping of Al. The uranium oxide seeds, which were added to $UO_2$ powder, were prepared by oxidizing and heat-treating scrap $UO_2$ pellets. A $UO_2$ pellet containing tungsten channels was fabricated for a thermal conductivity enhancement. For the fuel performance analysis, new high burnup models were developed and implemented in a code. This code was verified by an international database and our own database. The developed spacer grid has two features of contoured contact spring and hybrid mixing vanes. Mechanical and hydraulic tests showed that the spacer grid is superior in its rodsupporting, wear resistance and CHF performance. Finally, fuel assembly test technology was also developed. Facilities for mechanical and thermal hydraulic tests were constructed and are now in operation. Several achievements are to be utilized soon by the Korea Nuclear Fuel and thereby contribute to the economy and safety of PWR fuel in Korea

Secondary Phase Control of Lithium Ion-Substituted Potassium Niobate Ceramics via Stoichiometry Modification (화학양론 변화를 통한 리튬 이온 치환 니오브산 칼륨 세라믹의 이차상 제어 연구)

  • Tae Soo Yeo;Ju Hyeon Lee;Wook Jo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.5
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    • pp.533-540
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    • 2024
  • In line with the development of electronic devices and technologies, the demand for improving ferroelectric materials' performance is increasing. Since K0.5Na0.5NbO3 (KNN), an eco-friendly ferroelectric material that does not use lead and has a high Curie temperature, it is attracting attention to its usability as a high-temperature dielectric, and various studies are being conducted to increase performance. In a KNN having a perovskite structure, there was a simulation result that the KNN has higher spontaneous polarization when the A-site in which sodium ions exist is replaced with lithium ions. If the simulation results can be proven experimentally, the application range of KNN-based ferroelectric materials will increase. To this end, we tried to manufacture a K1-xLixNbO3 (KLN) with high electrical characteristics by fabricating niobium-deficient and potassium-excessive compositions, which attempt was made to solve the stoichiometry problem by volatilization and suppress secondary phases. If KLN's secondary phase suppression and relative permittivity improvement are successful, it will contribute to meeting the demand for developing electronic devices.

소결한 $(Bi_xLa_{1-x})Ti_3O_{12}$ 강유전체에서 조성 및 첨가물질에 따른 미세구조 및 전기적 특성 평가

  • Kim, Yeong-Min;Gang, Il;Ryu, Seong-Rim;Gwon, Sun-Yong;Jang, Geon-Ik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.279-279
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    • 2007
  • 비휘발성 메모리 Fe-RAM은 빠른 정보처리 속도와 전원공급이 차단되었을 때도 계속 정보를 유지할 수 있는 비휘발성 특징과 더불어 저전압, 저전력 구동의 장점이 있어서, 차세대 메모리로 많은 주목을 받고 있다. FeRAM에 사용되는 강유전체는 주로 Pb(Zr,Ti)$O_3$가 적용되었는데, 최근에는 비납계 강유전체의 연구도 활발히 이루어지고 있다. 이러한 비납계 강유전체 중에서 가장 특성이 우수한 물질은 $(Bi,La)_4Ti_3O_{12}$ (BLT) 이다. 그런데 BLT는 결정 방향에 따른 강한 이방성의 강유전 특성을 나타내기 때문에 BLT 박막을 이용하여 Fe-RAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 지금까지 연구된 BLT 박막의 방향성 조절결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 증착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법(sputtering deposition method), PLD (pulsed laser deposition)법 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요가 없게 된다. PVD 증착법의 적용을 위해서는 타겟의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표가 되지 않고 있다. 본 실험에서는 $Bi_2O_3,\;TiO_2,\;La_2O_3,\;Nb_2O_5\;and\;Al_2O_3$ 분말들을 이용하여 최적의 조성을 구하기 위하여 $Nb^{+5}$$Al^{+3}$$Ti^{+4}$ 자리에 소량 치환시켜 제조하였다. 혼합된 분말을 하소 후 pellet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 양면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. 측정결과 $Ti^{+4}$ 자리에 $Nb^{+5}$를 치환하여 제조한 시편에서 $2P_r{\sim}31\;{\mu}c/cm^2$정도의 매우 우수한 특성을 얻었다.

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Thickness-Dependent Properties of Undoped and Mn-doped (001) PMN-29PT [Pb(Mg1/3Nb2/3)O3-29PbTiO3] Single Crystals

  • Oh, Hyun-Taek;Joo, Hyun-Jae;Kim, Moon-Chan;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.55 no.3
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    • pp.290-298
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    • 2018
  • In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.

Superconducting and Magnetic Properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ System ($(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ 계의 초전도 및 자기적 특성)

  • Lee, H.K.
    • Progress in Superconductivity
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    • v.13 no.3
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    • pp.163-168
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    • 2012
  • The effects of Ta substitution on the superconducting and magnetic properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z(0{\leq}x{\leq}0.5)$ system have been investigated. The X-ray diffraction measurements indicate that the Ta ion replaces Ru sites up to x = 0.4. It is found that the Ta substitution for Ru significantly reduces the weak-ferromagnetic component of the field-cooled magnetic susceptibility without an appreciable change of room temperature thermopower at lower Ta doping level below x = 0.2. The resistive transition temperature tends to decrease monotonically from 27 K for the x = 0 sample to 16 K (9 K) for the x = 0.4 (x = 0.5) sample. These results suggest that superconductivity of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ compound is not significantly affected by the magnetic state of the Ru sublattice. The experimental results are discussed in connection with previous reports on the effects of Nb substitution.

Development of Nano Crystal Embedded Polymorphous Silicon Thin Film by Neutral Beam Assisted CVD Process at Room Temperature

  • Jang, Jin-Nyoung;Lee, Dong-Hyeok;So, Hyun-Wook;Yoo, Suk-Jae;Lee, Bon-Ju;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.171-171
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    • 2012
  • Neutral beam assisted chemical vapor deposition (NBa-CVD) process has been developed as a nove,l room temperature deposition process for the light-soaking free nano-crystalline silicon (nc-Si) thin films including intrinsic and n-type doped thin film. During formation of nc-Si thin films by the NBa-CVD process with silicon reflector at room temperature, the energetic particles enhance doping efficiency and crystalline phase in nc-Si thin films without additional heating at substrate. The effects of incident NB energy controlled by the reflector bias have been confirmed by Raman spectra analysis. Additionally, TEM images show uniform nc-Si grains which imbedded amorphous phase without incubation layer. The nc-Si films by the NBa-CVD are hardly degenerated by light soaking; the degradations of photoconductivity were just a few percents before and after light irradiation.

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Electrical Characterization of La2Mo2O9-based Electrolytes at High Temperature (La2Mo2O9계 고체전해질의 고온 전기적 특성)

  • 박상현;유광수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.2
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    • pp.236-241
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    • 2004
  • New electrolytes of cubic L $a_2$M $o_2$-x Nbx $O_{9-}$$\delta$/(x=0, 0.05, 0.1, 0.2) were fabricated by a solid-state reaction method and their sintered densities were approximately 93% of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The at complex impedance were measured at 34$0^{\circ}C$ to 93$0^{\circ}C$ in air and fitted with a Solatron ZView program. Their impedance spectra showed big difference below and over the phase transition temperature (58$0^{\circ}C$). The electrical conductivity of L $a_2$M $o_2$ $O_{9}$ was 1.36${\times}$10$^{-2}$ S$cm^{-1}$ / at 817$^{\circ}C$. Comparing to undoped L $a_2$M $o_2$ $O_{9}$ , Nb-doped specimen showed the increase of electrical conductivity due to the aliovalent doping effect..

Piezoelectric Properties of NKN-LST Ceramics with ZnO and CuO Addition (ZnO와 CuO 첨가에 따른 NKN-LST 세라믹스의 압전 특성)

  • Lee, Seung-Hwan;Lee, Sung-Gap;Lee, Young-Hie
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.8
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    • pp.632-635
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    • 2011
  • Additions (ZnO, CuO) doped $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$ (0.98NKN-0.02LST-x) lead free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of additions doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction of the sample appeared orthorhombic phase. The specimen doped with additions exhibits enhanced electrical properties ($d_{33}$= 153 pC/N). These results indicate that the 0.98NKN-0.02LST-x ceramics is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.

The Charge/Discharge for Metal Oxides Substitution and Doping of $Li_4Ti_5O_{12}$ ($Li_4Ti_5O_{12}$에서 금속 산화물 치환에 따른 충방전 효과)

  • Kang, Mi-Ra;Jee, Mi-Jung;Bae, Hyeon;Choi, Byung-Hyun;Kim, Sei-Ki;Lee, Mi-Jea
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.44-45
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    • 2006
  • 초고용량 캐패시터(Supercapacitor)는 이차전지와 더불어 차세대 전지로 분류되는 신형에너지 장치로서 충 방전 속도가 다르고 순간 전력공급이 가능하며 충 방전 수명이 반영구적으로 길고 고출력을 내기 때문에 이차전지가 갖지 못하는 영역에서 동력에너지원으로 사용된다. 본 연구에서는 초고용랑 캐패시터의 전극소재인 탄소계 재료를 대신하여 비탄소계 전극소재인 $Li_4Ti_5O_{12}$의 고상법 제조를 위한 Li/Ti의 최적 조성과 혼합 방법으로 Li-Ti 계에 $Fe_2O_3$, NiO, $Nb_2O_5$, $Sb_2O_3$ 그리고 ZnO와 같은 금속산화물로 치환시켜 합성된 Li -Ti계 금속산화물의 특성 및 충 방전 효과에 미치는 영향을 관찰하고자 하였다.

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Microstructures and Electrical Properties of PSN-PZT Ceramics for Piezoelectric Speaker (압전 스피커 응용을 위한 PSN-PZT계 세라믹스의 미세구조 분석 및 전기적 특성 평가)

  • Kim, Sung-Jin;Kweon, Soon-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.2
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    • pp.110-115
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    • 2019
  • $Pb(Sb_{0.5}Nb_{0.5})_x(Zr_{0.51}Ti_{0.49})_{1-x}O_3$ (abbreviation: PSN-PZT) ceramics were synthesized, using conventional bulk ceramic processing technology, with various PSN doping contents. The maximum density of PSN-PZT was 97% of the theoretical density in the samples sintered at $1,250^{\circ}C$. The maximum values of the piezoelectric properties achieved using the conventional processes were: $k_p$ of 0.625, $d_{33}$ of 531 pC/N, and $g_{33}$ of $33mV{\cdot}m/N$. Finally, we fabricated a piezo-speaker with the optimized PSN-PZT ceramics. The SPL of the speaker was measured at a distance of 1 m, with a driving voltage of $40V_{rms}$ in the frequency range of ~300 Hz to 9 kHz. The measured $SPL_{max}$ was at a very high level (95 dB), which was superior in quality in comparison with those of other commercial products.