• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.54-58
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• 2002

The present paper is to investigate the phase stability and soft magnetic properties of amorphous CoNbZr films when Pd is added as a substitution for CoNbZr alloys. The films were prepared by a RF magnetron sputtering method. The CoNbZrPd films deposited on Si wafers exhibited amorphous structures being independent upon the amount of Pd added in the films. On the addition of 4.34% Pd, the excellent soft magnetic characteristics of the films were observed with a coercive force of 0.54 Oe and an anisotropy field of 11 Oe, whereas a coercive force of 1 Oe and an anisotropy field of 3.5 Oe were shown in the film without the addition of Pd. The increased anisotropy field and low coercive force of the films may be attributed to the occupancy of Pd in the preferred sites parallel to the external magnetic field applied on the deposition process. A permeability of about 1100 was kept constant in the operation frequency ranging up to 100 MHz, which can be explained by the Landau-Lifshitz formula.

• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.1-7
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• 2024

The study investigated the impact of substrate pretreatment on depositing high-quality B-doped diamond (BDD) thin films using the HFCVD method. Films were deposited on Si and Nb substrates after sanding and seeding. Despite identical sanding conditions, BDD films formed faster on Nb due to even diamond seed distribution. Post-deposition, film average roughness (R_a) remained similar to substrate R_a, but higher substrate R_a led to decreased crystallinity. Nb substrate with 0.83 ㎛ R_a exhibited faster crystal growth due to dense, evenly distributed diamond seeds. BDD film on Nb with 0.83 ㎛ R_a showed a wide, stable potential window (2.8 eV) in CV results and a prominent 1332 cm^-1 diamond peak in R_aman spectroscopy, indicating high quality. The findings underscore the critical role of substrate pretreatment in achieving high-quality BDD film fabrication, crucial for applications demanding robust p-type semiconductors with superior electrical properties.

• Analytical Science and Technology
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• v.10 no.1
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• pp.35-42
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• 1997

The sample pretreatment technique using a high pressure acid digestion bomb for the analysis of ceramic capacitor materials, such as barium titanate and PZT, was studied. When the concentrations of hydrochloric acid were varied with the addition of nitric acid or distilled water, quantitative measurements for those samples were carried out using inductively coupled plasma atomic emission spectrometry. From this experiment the results indicate that most of elements, such as Ba, Mn, Zn, Si, etc., aren't affected by the concentration of hydrochloric acid but Nb and Zr are very susceptable to it. It however turns out that the digestion time relatively gave little effects on the analytical result. In case of Nb the ratio of hydrochloric acid to water should be greater than 3:1(v / v) for the best analytical result. For the Pb determination use of diluted hydrochloric acid compared to the mixture of nitric acid and hydrochloric acid showed a better analytical result.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.123-130
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• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• Current Optics and Photonics
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• v.8 no.3
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• pp.230-238
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• 2024

The refractive index is a key material-design parameter, especially for high-refractive-index glasses, which are used for precision optics and devices. Increased demand for high-precision optical lenses produced by the glass-mold-press (GMP) process has spurred extensive studies of proper glass materials. B₂O₃, SiO₂, and multiple heavy-metal oxides such as Ta₂O₅, Nb₂O₅, La₂O₃, and Gd₂O₃ mostly compose the high-refractive-index glasses for GMP. However, due to many oxides including up to 10 components, it is hard to predict the refractivity solely from the composition of the glass. In this study, the refractive index of optical glasses based on the B₂O₃-La₂O₃-Ta₂O₅-SiO₂ system is predicted using machine learning (ML) and compared to experimental data. A dataset comprising up to 271 glasses with 10 components is collected and used for training. Various ML algorithms (linear-regression, Bayesian-ridge-regression, nearest-neighbor, and random-forest models) are employed to train the data. Along with composition, the polarizability and density of the glasses are also considered independent parameters to predict the refractive index. After obtaining the best-fitting model by R² value, the trained model is examined alongside the experimentally obtained refractive indices of B₂O₃-La₂O₃-Ta₂O₅-SiO₂ quaternary glasses.

• Biomolecules & Therapeutics
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• v.20 no.3
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• pp.286-292
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• 2012

All-trans retinoic acid (ATRA) is currently used in adjuvant differentiation-based treatment of residual or relapsed neuroblastoma (NB). It has been reported that short-term ATRA treatment induces migration and invasion of SH-SY5Y via transglutaminase-2 (Tgase-2). However, the detailed mechanism of Tgase-2's involvement in NB cell invasion remains unclear. Therefore we investigated the role of Tgase-2 in invasion of NB cells using SH-SY5Y cells. ATRA dose-dependently induced the invasion of SH-SY5Y cells. Cystamine (CTM), a well known tgase inhibitor suppressed the ATRA-induced invasion of SH-SY5Y cells in a dose-dependent manner. Matrix metalloproteinase -9 (MMP-9) and MMP-2, well known genes involved in invasion of cancer cells were induced in the ATRA-induced invasion of the SH-SH5Y cells. Treatment of CTM suppressed the MMP-9 and MMP-2 enzyme activities in the ATRA-induced invasion of the SH-SY5Y cells. To confirm the involvement of Tgase-2, gene silencing of Tgase-2 was performed in the ATRA-induced invasion of the SH-SH5Y cells. The siRNA of Tgase-2 suppressed the MMP-9 and MMP-2 activity of the SH-SY5Y cells. MMP-2 and MMP-9 are well known target genes of NF-${\kappa}B$. Therefore the relationship of Tgase-2 and NF-${\kappa}B$ in the ATRA-induced invasion of the SH-SY5Y cells was examined using siRNA and CTM. ATRA induced the activation of NF-${\kappa}B$ in the SH-SY5Y cells and CTM suppressed the activation of NF-${\kappa}B$. Gene silencing of Tgase-2 suppressed the MMP expression by ATRA. These results suggested that Tgase-2 might be a new target for controlling the ATRA-induced invasion of NBs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.263-263
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.107-108
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.245.2-245.2
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• 2007