• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Corrosion Science and Technology
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• 제7권4호
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• pp.233-236
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• 2008

Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of $3Wt.c/oNH_4Cl$, 7Wt.c/oSi, $90Wt.c/oAl_2O_3+TiB_2$. B-doped silicide coating was consisted of two layers, an outer layer of $NbSi_2$ and an inner layer of $Nb_5Si_3$. Isothermal oxidation resistance of B-doped silicide coating was tested at $1250^{\circ}C$ in static air. B-doped silicide coating had excellent oxidation resistance, because continuous $SiO_2$ scale which serves as obstacle of oxygen diffusion was formed after oxidation.

• 한국주조공학회지
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• 제17권1호
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• pp.85-92
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• 1997

There has been a considerable interest to develop the silicide alloys as high temperature structural materials because of their excellent high temperature stability and strength, however, their lack of room temperature ductility and toughness was a main obstacle for the application. In order to improve ductility while maintaining good high temperature properties, possible refractory metal-silicide eutectic alloys composed of fine two phases were prepared by VAR(Vacuum Arc Remelting). Three silicide alloys, $Nb-Nb_3Si$, $Ti-Ti_5Si_3$, $V-V_3Si$, were selected as prospecting silicide eutectics and those high temperature characteristics were evaluated by high temperature compression test.

• Progress in Superconductivity
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• 제12권2호
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• pp.114-117
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• 2011

We report our efforts on the development of Nb-based non-hysteretic Josephson junction fabrication process for quantu device applications. By adopting and modifying the existing Nb-aluminum oxide tunnel junction process, we develop a process for non-hysteretic Josephson junction circuits using metal-silicide as metallic barrier material. We use sputter deposition of Nb and $MoSi_2$, PECVD deposition of silicon oxide as insulator material, and ICP-RIE for metal and oxide etch. The advantage of the metal-silicide barrier in the Nb junction process is that it can be etched in $SF_6$ RIE together with Nb electrode. In order to define a junction area precisely and uniformly, end-point detection for the RIE process is critical. In this paper, we employed thin Al layer for the etch stop, and optimized the etch condition. We have successfully demonstrated that the etch stop properties of the inserted Al layer give a uniform etch profile and a precise thickness control of the base electrode in Nb trilayer junctions.

• 한국세라믹학회지
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• 제36권6호
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• 소성∙가공
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• 제8권3호
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• pp.233-233
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• 1999

To investigate the effect of tungsten addition on mechanical properties, we prepared refractory (62χ)Nb-18Si-l00Mo-l0Ti-χW (χ=0, 5, 10 and 15 mol.%) in-situ composites by the conventional arc-casting technique, and then explored the microstructure, hardness and elastic modulus at ambient temperature and tensile properties at 1670 K. The microstructure consists of relatively fine (Nb, Mo, W, Ti)/sub 5/Si₃, silicide and a Nb solid solution matrix, and the fine eutectic microstructure becomes predominant at a Si content of around 18 mol.%. The hardness of (Nb, Mo, W, Ti(/sub 5/Si₃, silicide in a W-free sample is 1680 GPa, and goes up to 1980 GPa in a W 15 mol.% sample. The hardness, however, of Nb solid solution does not exhibit a remarkable difference when the nominal W content is increased. The elastic modulus shows a similar tendency to the hardness. The optimum tensile properties of the composites investigated are achieved at W 5 mol.% sample, which exhibits a relatively good ultimate strength of 230 MPa and an excellent balance of yield strength of 215 MPa, and an elongation of 3.7%. The SEM fractography generally indicates a ductile fracture in the W-free sample, and a cleavage rupture in W-impregnated ones.

• 한국세라믹학회지
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• 제35권5호
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• pp.505-511
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• 1998

단결정 Si 기판 위에 증착한 Co/Hf과 Co/Nb 이중층으로부터 형성된 Co 실리사이드의 성장기구에 대하여 조사하였다. 두 경우 모두 500$^{\circ}C$ 이상에서 CoSi2가 주로 형성되었으나 그 결정방위의 성장양상은 서로 달랐다. Co/Hf/(100)Si 구조에서는 Si 기판과 에피텍셜 관계를 갖는 결정립과 그렇지 않은 결정립이 서로 혼합되어 성장하였다. 그러나 Co/Nb/(100)Si에서는 처음부터 에피텍셜 관계를 갖지 않는 결정립들만이 형성되었다. 동일한 구조임에도 불구하고 이렇게 내열금속 중간층에 따라 성장된 실리사이드의 결정방위가 달라지는 것으 안정한 반응제어층의 형성 및 고온에서의 그 분해과정과 관련이 있었다. 여러 구성원소들로 이루어진 반응제어층이 고온까지 안정할 경우에는 Co의 확산이동을 균일하게 제어하여 실리사이드의 에피텍셜 성장이 가능하다.

• 한국재료학회지
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• 제7권7호
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• pp.587-591
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• 1997

RBS와 XRD를 이용하여 C o-Nb이중층 실리사이드와 구리 배선층간의 열적안정성에 관하여 조사하였다. Cu$_{3}$Si등의 구리 실리사이드는 열처리시 40$0^{\circ}C$정도에서 처음 형성되기 시작하였는데, 이 때 형성되는 구리 실리사이드는 기판의 상부에 존재하던 준안정한 CoSi의 분해시에 발생한 Si원자와의 반응에 의한 것이다. 한편, $600^{\circ}C$에서의 열처리 후에는 CoSi$_{2}$층을 확산.통과한 Cu원자와 기판 Si와의 반응에 의하여 CoSi$_{2}$/Si계면에도 구리 실리사이드가 성장하였는데, 이렇게 구리 실리사이드가 CoSi$_{2}$/Si 계면에 형성되는 것은 Cu원자의 확산속도가 여러 중간층에서 Si 원자의 확산속도 보다 더 빠르기 때문이다. 열처리 결과 최종적으로 얻어진 층구조는 CuNbO$_{3}$/Cu$_{3}$Si/Co-Nb합금층/Nb$_{2}$O$_{5}$CoSi$_{2}$/Cu$_{3}$Si/Si이었다. 여기서 상부에 형성된 CuNbO$_{3}$는 Cu원자가 Nb$_{2}$O$_{5}$및 Co-Nb합금층과 반응하여 기지조직의 입계에 석출되어 형성된 것이다.

• 열처리공학회지
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• 제14권1호
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• pp.1-7
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• 2001

A method to simultaneously synthesize and consolidate the silicide $NiSi_2$ and the composite $NiSi_2$-20vol.%Nb from powders of Ni, Si, and Nb was investigated. Combustion synthesis was carried out under the combined effect of an electric field and mechanical pressure. The final density of the products increased nearly linearly with the applied pressure. Highly dense $NiSi_2$ and $NiSi_2$-20vol.%Nb with relative densities of up to 97% were produced under the simultaneous application of a 60MPa pressure and a 3000A current on the reactant powders. The respective Vickers microhardness values for these materials were 6.0 and 5.8 GPa. From indentation crack measurements, the fracture toughness values for $NiSi_2$ and $NiSi_2$-20vol.%Nb were calculated to be 3.3 and 4.7 $MPa{\cdot}m^{1/2}$, respectively.

• 한국재료학회지
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• 제8권3호
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• pp.189-194
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• 1998

SIMS를 사용하여 Co/metal 이중층 구조의 실리사이드화 열처리시 발생하는 기판내 도펀트의 재분포 거동에 대하여 조사하였다. Co실리사이드화 반응의 중간층으로는 Ti, Nb, 또는 Hf를 사용하였고, 여러 도펀트들 중 실리사이드 내에서의 확산속도가 특히 빠른 B에 대하여 조사하였다. Co/Ti과 co/Nb의 경우 열처리후 B피크의 높이는 1 order 정도 낮아지지만 표면으로부터의 주피크의 상대적인 위치는 열처리전과 동일하였다. B의 분포양상은 Ti 및 Nb의 그것과 일치하는데, 이것은 B와 Ti 및 Nb간의 친화력이 크기 때문이다. Co/Hf의 경우에도 B의 피크는 Hf과 거의 같았으나, Ti나 Nb에 비해서 약간 차이가 나는 것으로 보다 B-Hf간의 친화력은 다소 떨어지는 것으로 보인다. 전체적으로 열처리후 Co/metal 이중층 실리사이드에서의 B의 재분포는 Si계면에서 고갈되는 반면, Co-metal/Co 실리사이드 계면에서 pile-up되는 양상을 보였다.