• 한국콘텐츠학회논문지
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• 제20권2호
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• pp.27-35
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• 2020

국내 반도체 산업은 수출 품목 1위이면 기술력 또한 경쟁국에 비해 높은 수준이다. 하지만 경쟁국들과의 기술 격차가 점점 줄어들고 있으며 강대국과의 무역마찰 등으로 인해 반도체 산업이 어려움에 직면해 있다. 따라서 이러한 상황에서 이를 극복하기 위해서는 반도체 기업들의 운영상 비효율성을 재정비하여 효율적인 생산 활동을 유도할 필요성이 있다. 이에 본 논문에서는 DEA 기업을 통해 반도체 산업의 경영 효율성을 분석하며 비효율적인 기업의 투사 값을 제시하며 벤치마킹의 대상이 될 수 있는 기업들의 참조 집합을 확인하고자 한다. 이를 위해 총 20개 고성장 전기·전자 기업들의 CCO와 BCC모형의 효율성과 규모 수익성(RTS)을 분석하였다. 분석 결과 BCC 효율성이 1인 기업은 총 13개, CCR 효율성이 1인 기업은 총 6개 기업으로 나타났다. 그리고 BCC, CCR 효율성이 모두 1인 기업은 총 6개 기업이었다. 또한 기업의 규모 수익성은 IRS가 10개 기업, CRS가 9개 기업 그리고 DRS가 11개 기업으로 분석되었으며 참조 빈도 분석에서는 BCC 모형에서는 11개 기업과 CCR 모형을 통해 6개 기업을 벤치마킹이 할 수 있는 기업으로 제시하였다. 이러한 결과는 반도체 기업들에게 비효율적인 운영환경을 개선할 수 있는 유용한 정보가 될 것이다.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.30-35
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• 2020

A microlens has been fabricated by various methods such as a thermal reflow, hot embossing, diamond milling, etc. However, these methods require a relatively complex process to control the microlens shape. In this work, we report on a simple and cost-effective method to fabricate a cylindrical microlens (CML), which can diffuse light widely. We have employed a slot-die head with the dual plate (a meniscus guide with a protruded μ-tip and a shim with a slit channel) for coating of a narrow stripe using poly(methyl methacrylate) (PMMA). We have shown that the higher the coating gap, the lower the maximum coating speed, which causes an increase in the stripe width and thickness. The coated PMMA stripe has the concave shape. To make it in the shape of a convex microlens, we have applied the thermal reflow method. When the stripe thickness is small, however, its effect is negligible. To increase the stripe thickness, we have increased the number of repeated coating. With this scheme, we have fabricated the CML with the width of 223 ㎛ and the thickness of 7.3 ㎛. Finally, we have demonstrated experimentally that the CML can diffuse light widely, a feature demanded for light extraction efficiency of organic light-emitting diodes (OLEDs) and suppression of moiré patterns in displays.

• 전기화학회지
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• 제8권3호
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• pp.130-134
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• 2005

본 연구에서는 그동안 전기화학적으로 합성되지 못했던 III-V족 화합물 반도체 InSb를 구연산 용액으로부터 합성하였으며 자체 제조한 AAO를 나노템플릿으로 이용하여 정전압 도금을 실시하여 InSb 나노와이어를 제조하였다 제조된 InSb나노와이어는 X선 회절분석 결과 단결정의 나노와이어는 아니었으나 정확하게 화학양론을 만족시키는 화합물임을 확인하였고, 평판 박막 상태의 InSb와는 달리 나노와이어의 길이방향으로 (220) 방향의 결정이 주로 성장하는 우선결정방위를 가지고 있음을 알 수 있었다. 또한 집합적으로 배열된 상태에서 측정된 I-V특성 곡선에서는 n형 반도체의 특성을 보이되 밴드갭이 좁고, 전자이동도가 큰 InSb고유의 특성상 반금속과 유사한 전기적 특성을 보유하고 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.245-245
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• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.281.2-281.2
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• 2016

Two-dimensional van der Waals (2D vdWs) materials have been extensively studied for future electronics and materials sciences due to their unique properties. Among them, black phosphorous (BP) has shown infinite potential for various device applications because of its high mobility and direct narrow band gap (~0.3 eV). In this work, we demonstrate a few-nm thick BP-based nonvolatile memory devices with an well-known poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate insulator. Our BP ferroelectric memory devices show the highest linear mobility value of $1159cm^2/Vs$ with a $10^3$ on/off current ratio in our knowledge. Moreover, we successfully fabricate the ferroelectric complementary metal-oxide-semiconductor (CMOS) memory inverter circuits, combined with an n-type $MoS_2$ nanosheet transistor. Our memory CMOS inverter circuits show clear memory properties with a high output voltage memory efficiency of 95%. We thus conclude that the results of our ferroelectric memory devices exhibit promising perspectives for the future of 2D nanoelectronics and material science. More and advanced details will be discussed in the meeting.

• 한국생산제조학회지
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• 제21권4호
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• pp.563-569
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• 2012

In the semiconductor and display device production processes, the handling of sensitive objects needs new carrying technology. Floating carrying motion is a practical alternative solution for non-contact handling of parts and substrates. This paper presents a study of through paths inside the air pressure pick-up head to generate the floating motion. The air motion by conceptual designed paths inside the head gradually develops positive pressure and vacuum between narrow objects. Positive pressure occurs through the head tip before discharging outside of the head. Negative pressure is developed by evacuating the inside head bottom as result of the radial flow connecting the vertical through-holes. The numerical analysis was done to figure out the stable levitation caused by the two acting forces between surfaces. In comparing with the standard case that the levitation gap gets 0.7-0.9 mm, it confirms the suggested head characteristics to show floating capacity in accordance with the head size, number of through-hole, and locations of through-hole in succession of conceptual design for a prototype.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.19.1-19.1
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• 2010

The process of manufacturing printed electronics using printing technology is attracting attention because its process cost is lower than that of the conventional semiconductor process. This technology, which offers both a lower cost and higher productivity, can be applied in the production of organic TFT (thin film transistor), solar cell, RFID(radio frequency identification) tag, printed battery, E-paper, touch screen panel, black matrix for LCD(liquid crystal display), flexible display, and so forth. In general, in order to implement printed electronics, narrow width and gap printing, registration of multi-layer printing by several printing units, and printing accuracy of under $20\;{\mu}m$ are all required. These electronic products require high precision to the degree of tens of microns - in a large area with flexible material, and mass productivity at low cost. As such, the roll-to-roll printing process is attracting attention as a mass production system for these printed electronic devices. For the commercialization of this process, two basic electronic ink technologies, such as conductive ink and polymers, and printing equipment have to be developed. Therefore, this paper addressed basis design and test to develop fine patterning equipment employing the roll-to-roll printing equipment and electronic ink.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.281.2-281.2
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• 2013

Since heavy metal ions included in water or food resources have critical effects on human health, highly sensitive, rapid and selective analysis for heavy metal detection has been extensively explored by means of electrochemical, optical and colorimetric methods. For example, quantum dots (QDs), such as semiconductor QDs, have received enormous attention due to extraordinary optical properties including high fluorescence intensity and its narrow emission peaks, and have been utilized for heavy metal ion detection. However, the semiconductor QDs have a drawback of serious toxicity derived from cadmium, lead and other lethal elements, thereby limiting its application in the environmental screening system. On the other hand, Graphene oxide (GO) has proven its superlative properties of biocompatibility, unique photoluminescence (PL), good quenching efficiency and facile surface modification. Recently, the size of GO was controlled to a few nanometers, enhancing its optical properties to be applied for biological or chemical sensors. Interestingly, the presence of various oxygenous functional groups of GO contributes to opening the band gap of graphene, resulting in a unique PL emission pattern, and the control of the sp2 domain in the sp3 matrix of GO can tune the PL intensity as well as the PL emission wavelength. Herein, we reported a photoluminescent GO array on which heavy metal ion-specific DNA aptamers were immobilized, and sensitive and multiplex heavy metal ion detection was performed utilizing fluorescence resonance energy transfer (FRET) between the photoluminescent monolayered GO and the captured metal ion.

• 한국진공학회지
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• 제20권2호
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• pp.77-85
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• 2011

실리콘(Si)에 비해 상대적으로 밴드 갭이 작고, 열전도도가 낮으며, 기존의 Si 반도체 공정 기술과 호환이 가능한 실리콘-게르마늄(SiGe) 합금은 트랜지스터, 광수신 소자, 태양전지, 열전 소자 등 다양한 전자 소자에서 사용되고 있다. 본 논문에서는 SiGe 합금이 전자소자에 응용되는 원리 및 응용과 관련된 기술적인 논제들을 고찰한다. Si에 비해 밴드 갭이 작은 게르마늄(Ge)이 그 구성 원소인 SiGe 합금의 밴드 갭은 Si과 Ge의 분률과 상관없이 항상 Si의 밴드 갭 보다 작다. 이러한 SiGe의 작은 밴드 갭은 전류 이득의 손실 없이 베이스 두께를 감소시키는 것을 가능하게 하여 바이폴라 트랜지스터의 동작속도를 향상시킨다. 또한, Si이 흡수하지 못하는 장파장 대의 빛을 SiGe이 흡수하여 광전류를 생성하게 함으로써 태양전지의 변환효율을 증가시킨다. 질량이 서로 다른 Si 및 Ge 원소의 불규칙적인 분포에 의해 발생하는 포논 산란 효과 때문에 SiGe 합금은 순수한 Si 및 Ge과 비교할 때 낮은 열전도도를 갖는다. 낮은 열전도도 특성의 SiGe 합금은 전자 소자 구조 내에서의 열 손실을 억제하는데 효과가 있으므로 Si 반도체 공정 기반의 열전 소자의 구성 물질로서 활용이 기대된다.

• 한국세라믹학회지
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• 제53권4호
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• pp.400-405
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• 2016

Ferric oxide (${\alpha}-Fe_2O_3$, hematite) is an n-type semiconductor; due to its narrow band gap ($E_g=2.1eV$), it is a highly attractive and desirable material for use in solar hydrogenation by water oxidation. However, the actual conversion efficiency achieved with $Fe_2O_3$ is considerably lower than the theoretical values because the considerably short diffusion length (2-4 nm) of holes in $Fe_2O_3$ induces excessive charge recombination and low absorption. This is a significant hurdle that must be overcome in order to obtain high solar-to-hydrogen conversion efficiency. In consideration of this, it is thought that elemental doping, which may make it possible to enhance the charge transfer at the interface, will have a marked effect in terms of improving the photoactivities of ${\alpha}-Fe_2O_3$ photoanodes. Herein, we report on the synthesis by pulsed electrodeposition of ${\alpha}-Fe_2O_3$-based anodes; we also report on the resulting photoelectrochemical (PEC) properties. We attempted Ti-doping to enhance the PEC properties of ${\alpha}-Fe_2O_3$ anodes. It is revealed that the photocurrent density of a bare ${\alpha}-Fe_2O_3$ anode can be dramatically changed by controlling the condition of the electrodeposition and the concentration of $TiCl_3$. Under optimum conditions, a modified ${\alpha}-Fe_2O_3$ anode exhibits a maximum photocurrent density of $0.4mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE) under 1.5 G simulated sunlight illumination; this photocurrent density value is about 3 times greater than that of unmodified ${\alpha}-Fe_2O_3$ anodes.