• Journal of Electrical Engineering and Technology
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• v.2 no.2
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• pp.267-273
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• 2007

A depletion-mode MOSFET has been analyzed to evaluate its electrical behavior using a novel 3-D numerical simulation package. The characterizing analysis of the BC MOSFET was performed through short-channel narrow-channel and small-geometry effects that are investigated, in detail, in terms of the threshold voltage. The DIBL effect becomes significant for a short-channel device with a channel length of $<\;3({\mu}m)$. For narrow-channel devices the variation of the threshold voltage was sharp for $<4({\mu}m)$ due to the strong narrow-channel effect. In the case of small-geometry devices, the shift of the threshold voltage was less sensitive due to the combination of the DIBL and substrate bias effects, as compared with that observed from the short-channel and narrow-channel devices. The characterizing analysis of the narrow-channel and small-geometry devices, especially with channel width of $<\;4({\mu}m)$ and channel area of $<\;4{\times}4({\mu}m^2)$ respectively, can be accurately performed only from a 3-D numerical simulation due to their sharp variations in threshold voltages.

• 한국방재학회:학술대회논문집
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• 2008.02a
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• pp.203-206
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• 2008

There are lots of the narrow pass on alluvial channel of Korea. Most of research about this narrow pass of channel were focused on incremental effect of water level at backwater segment. In the meantime this research showed that it is important to valuate the river-bed variation at backward and forward around narrow pass. The sediment deposit at not only the backward of narrow pass but also the forward affected incremental effect of water level. The sediment deposit at the forward of narrow pass headed by sediment that passed through the narrow passed or scoured right around it.

• International Journal of Naval Architecture and Ocean Engineering
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• v.8 no.1
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• pp.102-109
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• 2016

The hydrodynamic interaction between two large vessels can't be neglected when two large vessels are closed to each other in restricted waterways such as in a harbor or narrow channel. This paper is mainly concerned with the ship maneuvering motion based on the hydrodynamic interaction effects between two large vessels moving each other in curved narrow channel. In this research, the characteristic features of the hydrodynamic interaction forces between two large vessels are described and illustrated, and the effects of velocity ratio and the spacing between two vessels are summarized and discussed. Also, the Inchon outer harbor area through the PALMI island channel in Korea was selected, and the ship maneuvering simulation was carried out to propose an appropriate safe speed and distance between two ships, which is required to avoid sea accident in confined waters. From the inspection of this investigation, it indicates the following result. Under the condition of $SP_{12}{\leq}0:5L$, it may encounter a dangerous tendency of grounding or collision due to the combined effect of the interaction between ships and external forces. Also considering the interaction and wind effect as a parameter, an overtaken and overtaking vessel in narrow channel can navigate while keeping its own original course under the following conditions; the lateral separation between two ships is about kept at 0.6 times of ship length and 15 degrees of range in maximum rudder angle. On the other hand, two ships while overtaking in curved narrow channel such as Inchon outer harbor in Korea should be navigated under the following conditions; $SP_{12}$ is about kept at 1.0 times of ship length and the wind velocity should not be stronger than 10 m/s.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.6
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• pp.58-62
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• 1985

Analytical threshold voltage model of small size ion-implanted MOSFET's is proposed. Yau's model which is only applicable to MOSFET's with constant doping concentration was modified to handle the MOSFET's with nonuniform channel doping concentration and bird's beak, whereby the short and narrow-channel effect was quantitively described. Threshold voltage model for short-channel MOSFET's was derived by approximating the SUPREM result of channel impurity profile to a 2-step profile, and the narrow width be-haviour was successfully described using thr'weighting factor'to accommodate the doping profile in the bird's beak region.

• Journal of Mechanical Science and Technology
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• v.17 no.3
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• pp.429-439
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• 2003

Counter-current two-phase flows of air- water in narrow rectangular channels with offset strip fins have been experimentally investigated in a 760 mm long and 100 mm wide test section with 3.0 and 5.0 mm gap widths. The two-phase flow regime, channel-average void fractions and two-phase pressure gradients were studied. Flow regime transition occurred at lower superficial velocities of air than in the channels without fins. In the bubbly and slug flow regimes, elongated bubbles rose along the subchannel formed by fins without lateral movement. The critical void fraction for the bubbly-to-slug transition was about 0.14 for the 3 mm gap channel and 0.2 for the 5 mm gap channel. respectively. Channel-average void fractions in the channels with fins were almost the same as those in the channels without fins. Void fractions increased as the gap width increased, especially at high superficial velocity of air. The presence of fins enhanced the two-phase distribution parameter significantly in the slug flow, where the effect of gap width was almost negligible. Superficial velocity of air dominated the two-phase pressure gradients. Liquid superficial velocity and channel gap width has only a minor effect on the pressure gradients.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.162-163
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• 2000

We have observed the short-channel effect, narrow-channel effect and small-geometry effect in terms of a variation of the threshold voltage. For a short-channel effect the threshold voltage was largely determined by the DIBL effect which stimulates more carrier injection in the channel by reducing the potential barrier between the source and channel. The effect becomes more significant for a shorter-channel device. However, the potential, field and current density distributions in the channel along the transverse direction showed a better uniformity for shorter-channel devices under the same voltage conditions. The uniformity of the current density distribution near the drain on the potential minimum point becomes worse with increasing the drain voltage due to the enhanced DIBL effect. This means that considerations for channel-width effect should be given due to the variation of the channel distributions for short-channel devices. For CCDs which are always operated at a pinch-off state the channel uniformity thus becomes significant since they often use a device structure with a channel length of > 4 ${\mu}{\textrm}{m}$ and a very high drain (or diffusion) voltage. (omitted)

• Journal of the Korean Society of Marine Environment & Safety
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• v.28 no.4
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• pp.525-532
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• 2022

The port of Mokpo operates the largest number of coastal passenger ships and routes in Korea. These coastal passenger ships pass through narrow channels in the south-west coast of Korea owing to the geographical effect. It is difficult to find a research for the safety of the marine traffic environment in the narrow channel used by coastal passenger ship. Therefore, in this study, the navigation safety of the target coastal passenger ship was analyzed in the narrow channel near the port of Mokpo using the Korea design standard for port and harbour facilities. As a result of the analysis, the width of the narrow channel between Maek-island and Dali-island is narrower than 1.5 times of the target ship's length over all, the degree of curvature of the narrow channel exceeds the standard value of 30°, and several fishing gears exist near the narrow channel. Finally, the following were suggested to improve the safety of navigation on the narrow channel: keeping one-way traffic during the day-time, and navigating through the designated fairway during night·visibility restriction·low tide.

• Nuclear Engineering and Technology
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• v.53 no.6
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• pp.1796-1809
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• 2021

The subchannel of a research reactor used to generate high power density is designed to be narrow and rectangular and comprises plate-type fuels operating under downward flow conditions. Critical heat flux (CHF) is a crucial parameter for estimating the safety of a nuclear fuel; hence, this parameter should be accurately predicted. Here, machine learning is applied for the prediction of CHF in a narrow rectangular channel. Although machine learning can effectively analyze large amounts of complex data, its application to CHF, particularly for narrow rectangular channels, remains challenging because of the limited flow conditions available in existing experimental databases. To resolve this problem, we used four CHF correlations to generate pseudo-data for training an artificial neural network. We also propose a network architecture that includes pre-training and prediction stages to predict and analyze the CHF. The trained neural network predicted the CHF with an average error of 3.65% and a root-mean-square error of 17.17% for the test pseudo-data; the respective errors of 0.9% and 26.4% for the experimental data were not considered during training. Finally, machine learning was applied to quantitatively investigate the parametric effect on the CHF in narrow rectangular channels under downward flow conditions.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.749-752
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• 2014

The device performance of n-channel MuGFET with different fin width, existence of spacer and channel length has been characterized. Tri-Gate structure(fin number=10) has been used. There are four kinds of Tri-Gate with fin width=55nm with spacer, fin width=70nm with spacer, fin width=55nm without spacer, fin width=70nm without spacer. DIBL, subthreshold swing, Vt roll-off, (above Short Channel Effect)and hot carrier stress degradation have been measured. From the experiment results, short Channel Effect with spacer was decreased, hot carrier degradation with spacer and narrow fin width was decreased. Therefore, layout of LDD structure with spacer and narrow fin width is desirable in short channel effect and hot carrier degradation.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.145-148
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• 2001

In this paper, polycrystalline silicon thin film transistor using by Solid Phase Crystallization(SPC) were fabricated, and these devices were measured and analyzed the electrical output and transfer characteristics along to DC voltage stress. The transfer characteristics of polycrystalline silicon thin film transistor depended on drain and gate voltages. Threshold voltage is high with long channel length and narrow channel width. And output characteristics of polycrystalline silicon thin film transistor flowed abruptly much higher drain current. The devices induced electrical stress are decreased drain current. At last, field effect mobility is the faster as channel length is high and channel width is narrow.