• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.280-280
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• 2014

We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

• 공업화학
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• 제20권6호
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• pp.617-621
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• 2009

Zinc oxide (ZnO)을 금(Au)과 fluorine-doped tin oxide (FTO) 촉매로 산화실리콘($SiO_2$) 기판에 산화아연입자 20 nm, $20{\mu}m$를 각각 사용하여 기체-액체-고체(VLS) 합성법으로 성장시켰다. 나노로드의 표면특성, 화학조성, 그리고 결정특성을 엑스레이회절(X-ray diffraction (XRD)), 에너지 분산형 X선 분광기(Energy-dispersive X-ray spectroscopy (EDX)), 표면 방출주사현미경(Field-emission scanning electron microscope (FE-SEM))으로 분석하였다. ZnO의 입자 크기 뿐만 아니라 결정형태가 성장에 크게 영향을 미쳤다. ZnO의 모든 나노구조가 6방정계(六方晶系), 단일결정구조를 가지고 있었다. 최적온도는 $1030^{\circ}C$, 입자크기는 20 nm이다. 그러므로 Au 대신 플루오린 첨가 도핑으로 전기음성도가 증가된 FTO 증착에 의해서 생성된 나노로드는 경제성 있는 대체물질로서의 가치가 있을 것으로 사료된다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.77-77
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• 2008

금(Au)이나 은(Ag)과 같은 귀금속 물질로 형성된 금속 나노 구조체는 표면 플라즈몬 공진(Surface Plasmon Resonance, SPR) 현상과 이의 국부 환경(local environment) 변화에 대해 민감한 의존성으로 인하여 생화학적 센서로의 응용이 주목 받고 있다. 표면 플라즈몬 공진은 광 흡수와 광 산란을 수반하는데, 두 가지 특성 모두 분광학적 신호검출방식으로 센서에 응용가능하다. 이 중 광 산란을 이용하는 방식은 광원의 배경잡음 효과가 배제되기 때문에 단일 입자 검출에 유리하다. 광 흡수와 광 산란 특성은 금속 나노 구조체는 크기, 형상, 주변 매질, 물질의 선택에 따라서 영향을 받는다. 본 연구에서는 금 나노 디스크(nanodisc)의 형상에 따라서 여기 되는 표면 플라즈몬이 광 흡수와 광 산란 특성에 미치는 영향을 가시광과 근적외선 영역에 대해서 불연속 쌍극자 근사법(Discrete Dipole Approximation, DDA)을 이용하여 전사모사(simulation) 하였다. 금 나노 디스크의 형상과 플라즈몬 특성 간의 관계는 공명 파장과 산란 양자 거둠율(scattering quantum yield, $\eta$)을 이용하여 분석하였고, 센서로서의 응용을 가늠하기 위해 주변 매질의 굴절률을 조절하여 그에 따른 민감도(sensitivity )를 비교하였다. 나노 디스크의 모양이 판상에 가까워질수록 공명 파장은 적색 편이하였고 광 산란 효율과 민감도는 증가하는 현상이 나타났다. 또한, 산란 양자 거둠율은 증가하다가 완만하게 감소하는 경향이 나타났다.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.178-183
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• 2014

Recently, various type of nanomaterials such as nanorod, nanowire, nanotube and their core/shell nanostructures have attracted much attention in photocatalyst due to their unique properties. Among them, Type-II core/shell heterostructures have extensively studied because it has exhibited improved electrical and optical properties against their single-component nanostructure. Such structures are expected to offer high absorption efficiency and fast charge transport due to their stepwised energetic combination and large internal surface area. Thus, it has been considered as potential candidates for high efficient photocatalytic activity. In this work, we introduce a novel chemical conversion process to synthesize Type-II ZnO/ZnSe core/shell heterostructures. A plausible conversion mechanism to ZnO/ZnSe core/shell heterostructres was proposed based on SEM, XRD, TEM and XPS analysis. The ZnO/ZnSe heterostructures exhibited excellent photocatalytic activity toward the decomposition of RhB dye compared to the ZnO nanorod arrays due to enhanced light absorption and the type-II cascade band structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.275-275
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• 2013

Osteoblast is one of cells related with osseointegration and many research have conducted the adhesion of osteoblast onto the surface of implant. In the osseointegration, biocompatibility of the implant and cell adhesion to the surface are important factors. The researches related to cell adhesion have a direction from micro-scaled surface roughness to nano-scaled surface roughness with advancing nanotechnology. A cell reacts and sense to stimuli from extracellular matrix (ECM) and topography of the ECM [1]. Thus, for better osseointegration, we should provide an environment similar to ECM. In this study, we synthesize TiO2 nanowires using hydrothermal reaction because TiO2 provides inertness to titanium on its surface and enables it used as an implant material for the orthopedic treatment such as fixation of the bone fracture [2]. Ti substrate is immersed into NaOH aqueous solution. The solution are heated at $140{\sim}200^{\circ}C$ for various time (10~720 minutes). After heat treatment, we take out the sample and immerse it into HCl aqueous solution for 1 hour. The acid treated sample is heated again at $500^{\circ}C$ for 3 hours [3]. Then, we culture osteoblast on the TiO2 nanowires. For investigating cell adhesion onto nanostructured surface, we conduct several tests such as MTT assay, ALP (Alkaline phosphatase) activity assay, measuring calcium expression, and so on. These preliminary results of the cell culture on the nanowires are foundation for investigating cell-material interaction especially with nanostructure interaction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.412-412
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• 2009

Carbon-based nano materials have a significant effect on various fields such as physics, chemistry and material science. Therefore carbon nano materials have been investigated by many scientists and engineers. Especially, since graphene, 2-dimemsonal carbon nanostructure, was experimentally discovered graphene has been tremendously attracted by both theoretical and experimental groups due to their extraordinary electrical, chemical and mechanical properties. Electrical conductivity of graphene is about ten times to that of silicon-based material and independent of temperature. At the same time silicon-based semiconductors encountered to limitation in size reduction, graphene is a strong candidate substituting for silicon-based semiconductor. But there are many limitations on fabricating large-scale graphene sheets (GS) without any defect and controlling chirality of edges. Many scientists applied micromechanical cleavage method from graphite and a SiC decomposition method to the fabrication of GS. However these methods are on the basic stage and have many drawbacks. Thereupon, our group fabricated GS through Thermo-electrical Pulse Induced Evaporation (TPIE) motivated by arc-discharge and field ion microscopy. This method is based on interaction of electrical pulse evaporation and thermal evaporation and is useful to produce not only graphene but also various carbon-based nanostructures with feeble pulse and at low temperature. On fabricating GS procedure, we could recognize distinguishable conditions (electrical pulse, temperature, etc.) to form a variety of carbon nanostructures. In this presentation, we will show the structural properties of OS by synthesized TPIE. Transmission Electron Microscopy (TEM) and Optical Microscopy (OM) observations were performed to view structural characteristics such as crystallinity. Moreover, we confirmed number of layers of GS by Atomic Force Microscopy (AFM) and Raman spectroscopy. Also, we used a probe station, in order to measure the electrical properties such as sheet resistance, resistivity, mobility of OS. We believe our method (TPIE) is a powerful bottom-up approach to synthesize and modify carbon-based nanostructures.

• 전기화학회지
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• 제15권2호
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• pp.95-100
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• 2012

올리빈 구조를 가지는 $LiFePO_4$ 양극활물질은 낮은 가격과 안정성으로 인해 리튬 이차전지 시장에서 큰 관심을 받고 있다. 그러나 낮은 이온 전도도와 작동전압 때문에 상업적으로 이용되기엔 사용분야의 응용에 제한이 있다. 이러한 문제를 해결하기 위해서 철 양이온을 망간 양이온과 같은 전이금속으로 치환함으로써 작동전압을 높이는 연구가 시행되고 있다. 또한 미세구조의 나노화를 통해 리튬 이온의 확산거리를 짧게 만들어 줌으로써 이온 전도도를 높여주는 연구도 진행 중이다. 그래서 이번 연구에서는 이온의 확산거리를 짧게 만들어 주기 위해 표면적을 넓힐 수 있는 전기방사를 이용해 물질을 합성하였고, 이를 확인하기 위하여 시차주사현미경 관측을 통해 균일한 나노 섬유의 형성을 확인하였다. 또한 결정구조를 관찰하기 위해 X-선 회절 분석을 하였는데, 다른 상의 관찰 없이 단일상의 결정구조를 얻음을 확인하였다. 전기화학적 성능 확인방법으로는 충방전 테스트기를 이용하여 초기 충방전 곡선을 분석하였고, 계면저항 및 리튬 양이온의 확산을 알아보기 위해 임피던스 측정을 실행하였다.

• 한국세라믹학회지
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• 제41권12호
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• pp.900-906
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• 2004

현재까지 개발되어 온 고체산화물 연료전지는 전해질로 사용되는 산소이온전도성 산화물의 저온에서의 낮은 전도도로 인해 그 사용영역이 제한되어 왔으며, 기판재료가 연료가스 확산층으로 사용되어야 한다는 점 때문에 저온작동을 위한 박막화 역시 명확한 한계를 가지고 있다. 이러한 문제점은 고도의 평활도를 갖는 균일한 나노기공성 기판재를 도입함으로써 해결될 수 있으며, 본 연구에서는 나노기공성 기판에 비정질 금속박막을 증착/산화하는 방안을 제시한다. 초박막형 성공정으로서, 산화 후 산소이온전도성 산화물을 구성하는 합금 타겟을 장착한 DC-magnetron sputter를 사용하여 $20{\sim}200nm$의 기공크기를 갖는 나노기공성 양극산화 알루미나 기판에 비정질 금속합금막을 형성하여 산화/열처리 과정을 거쳐 초박막 산화물 전해질의 제조공정을 실현하였다. 얻어진 박막의 가스투과특성, 입자/입계의 관찰, 상전이에 따른 결정구조/미세구조변화를 관찰하여 초박막 증착 및 전해질의 나노구조제어에 필요한 제반 기본물성데이터를 확보하였다.