• Title/Summary/Keyword: Nanosheet FETs

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Compact Modeling for Nanosheet FET Based on TCAD-Machine Learning (TCAD-머신러닝 기반 나노시트 FETs 컴팩트 모델링)

  • Junhyeok Song;Wonbok Lee;Jonghwan Lee
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.136-141
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    • 2023
  • The continuous shrinking of transistors in integrated circuits leads to difficulties in improving performance, resulting in the emerging transistors such as nanosheet field-effect transistors. In this paper, we propose a TCAD-machine learning framework of nanosheet FETs to model the current-voltage characteristics. Sentaurus TCAD simulations of nanosheet FETs are performed to obtain a large amount of device data. A machine learning model of I-V characteristics is trained using the multi-layer perceptron from these TCAD data. The weights and biases obtained from multi-layer perceptron are implemented in a PSPICE netlist to verify the accuracy of I-V and the DC transfer characteristics of a CMOS inverter. It is found that the proposed machine learning model is applicable to the prediction of nanosheet field-effect transistors device and circuit performance.

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Investigation of Mechanical Stability of Nanosheet FETs During Electro-Thermal Annealing (Nanosheet FETs에서의 효과적인 전열어닐링 수행을 위한 기계적 안정성에 대한 연구)

  • Wang, Dong-Hyun;Park, Jun-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.50-57
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    • 2022
  • Reliability of CMOS has been severed under aggressive device scaling. Conventional technologies such as lightly doped drain (LDD) and forming gas annealing (FGA) have been applied for better device reliability, but further advances are modest. Alternatively, electro-thermal annealing (ETA) which utilizes Joule heat produced by electrodes in a MOSFET, has been newly introduced for gate dielectric curing. However, concerns about mechanical stability during the electro-thermal annealing, have not been discussed, yet. In this context, this paper demonstrates the mechanical stability of nanosheet FET during the electro-thermal annealing. The effect of mechanical stresses during the electro-thermal annealing was investigated with respect to device design parameters.

Trend and Issues of van der Waals 2D Semiconductor Devices (반데르발스 2차원 반도체소자의 응용과 이슈)

  • Im, Seongil
    • Vacuum Magazine
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    • v.5 no.2
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    • pp.18-22
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    • 2018
  • wo dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano-electronics and -optoelectronics. This review mainly focuses on the features and applications of state-of-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. In a closing remark, important remaining issues of 2D vdW devices are also introduced as requests for future electronics and photonics applications.