• Title/Summary/Keyword: Nanorod

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Enhanced Gas Sensing Properties of Bi2O3-Core/In2O3-Shell Nanorod Gas Sensors

  • Park, Sung-Hoon;An, So-Yeon;Ko, Hyun-Sung;Jin, Chang-Hyun;Lee, Chong-Mu
    • Bulletin of the Korean Chemical Society
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    • v.33 no.10
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    • pp.3368-3372
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    • 2012
  • The $Bi_2O_3$ nanowires are highly sensitive to low concentrations of $NO_2$ in ambient air and are almost insensitive to most other common gases. However, it still remains a challenge to enhance their sensing performance and detection limit. This study examined the influence of the encapsulation of ${\beta}-Bi_2O_3$ nanorods with $In_2O_3$ on the $NO_2$ gas sensing properties. ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorods were fabricated by a two-step process comprising the thermal evaporation of $Bi_2O_3$ powders and sputter-deposition of $In_2O_3$. Multiple networked ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorod sensors showed the responses of 12-156% at 1-5 ppm $NO_2$ at $300^{\circ}C$. These response values were 1.3-2.7 times larger than those of bare ${\beta}-Bi_2O_3$ nanorod sensors at 1-5 ppm $NO_2$. The enhancement in the response of ${\beta}-Bi_2O_3$ nanorods to $NO_2$ gas by the encapsulation by $In_2O_3$ can be accounted for based on the space-charge model.

Comparison of Luminescence Properties of Electrochemical Luminescence Cells for Various Electrode Materials and Structures

  • Pooyodying, Pattarapon;Ok, Jung-Woo;Sung, Youl-Moon
    • Journal of Electrical Engineering and Technology
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    • v.12 no.4
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    • pp.1605-1610
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    • 2017
  • The electrochemical luminescence (ECL) device was investigated, which has similar structure to the dye-sensitized solar cell. The structure of the ECL cell in this experiment reliably induces a large amount of the oxidation around electrodes. The band gap of the ECL electrode is of 3.0 - 3.2 eV. Titanium dioxide ($TiO_2$) nanoparticle has following properties: a band gap of 3.4 eV, a low-priced material, and 002 preferred orientation (Z-axis). Zinc Oxide (ZnO) nanorod is easy to grow in a vertical direction. In this paper, in order to determine material suitable for the ECL device, the properties of various materials for electrodes of ECL devices such as ZnO nanorod (ZnO-NR) and $TiO_2$ nanoparticle ($TiO_2-NP$) were compared. The threshold voltage of the light emission of the ZnO-NR was 2.0 V which is lower than 2.5 V of $TiO_2-NP$. In the other hand, the luminance of $TiO_2-NP$ was $44.66cd/m^2$ and was higher than that of $34cd/m^2$ of ZnO-NR at the same applied voltage of 4 V. Based on the experimental results, we could conclude that $TiO_2-NP$ is a more suitable electrode material in ECL device than the ZnO-NR.

Photoelectrochemical Cell Study on Closely Arranged Vertical Nanorod Bundles of CdSe and Zn doped CdSe Films

  • Soundararajan, D.;Yoon, J.K.;Kwon, J.S.;Kim, Y.I.;Kim, S.H.;Park, J.H.;Kim, Y.J.;Park, D.Y.;Kim, B.C.;Wallac, G.G.;Ko, J.M.
    • Bulletin of the Korean Chemical Society
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    • v.31 no.8
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    • pp.2185-2189
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    • 2010
  • Closely arranged CdSe and Zn doped CdSe vertical nanorod bundles were grown directly on FTO coated glass by using electrodeposition method. Structural analysis by XRD showed the hexagonal phase without any precipitates related to Zn. FE-SEM image showed end capped vertically aligned nanorods arranged closely. From the UV-vis transmittance spectra, band gap energy was found to vary between 1.94 and 1.98 eV due to the incorporation of Zn. Solar cell parameters were obtained by assembling photoelectrochemical cells using CdSe and CdSe:Zn photoanodes, Pt cathode and polysulfide (1M $Na_2S$ + 1M S + 1M NaOH) electrolyte. The efficiency was found to increase from 0.16 to 0.22 upon Zn doping. Electrochemical impedance spectra (EIS) indicate that the charge-transfer resistance on the FTO/CdSe/polysulfide interface was greater than on FTO/CdSe:Zn/polysulfide. Cyclic voltammetry results also indicate that the FTO/CdSe:Zn/polysulfide showed higher activity towards polysulfide redox reaction than that of FTO/CdSe/polysulfide.

Low Temperature Optical Properties of NiO coated ZnO Nanorods (NiO 코팅 두께에 따른 ZnO 나노막대의 저온분광특성)

  • Shin, Y.H.;Park, Y.H.;Kim, Yong-Min
    • Journal of the Korean Vacuum Society
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    • v.16 no.4
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    • pp.286-290
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    • 2007
  • We fabricated NiO coated ZnO nanorods using ZnO nanorods grown on a Si substrate. After thermal hydrogenation process of these NiO-ZnO core-shell nanorods, we confirm that Ni nanodots were built up on the surface of ZnO nanorods. Photoluminescence (PL) measurements at T=5 K were made to understand the optical properties of these various nanorods. As samples sequencially transformed into $ZnO{\rightarrow}NiO-ZnO{\rightarrow}Ni$ nanodot-ZnO, PL transition energies and intensities are varied as well. In comparison to pure ZnO nanorod, the acceptor bound exciton ($A^0X$) became the minor peak for NiO-ZnO nanorods. On the other hand, for Ni nanodot-ZnO sample, ($A^0X$) transition peak intensity became the most dominant peak. This is due to the fact that during thermal hydrogenation process, appreciable amounts of Ni and hydrogen ions defused into ZnO nanorod which played as accepters.

Fabrication and Characterization of TFT Gas Sensor with ZnO Nanorods Grown by Hydrothermal Synthesis (수열합성법으로 성장시킨 ZnO 나노 로드기반 TFT 가스 센서 제조 및 특성평가)

  • Jeong, Jun-Kyo;Yun, Ho-Jin;Yang, Seung-Dong;Park, Jeong-Hyun;Kim, Hyo-Jin;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.4
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    • pp.229-234
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    • 2017
  • In this study, we fabricated a TFT gas sensor with ZnO nanorods grown by hydrothermal synthesis. The suggested devices were compared with the conventional ZnO film-type TFTs in terms of the gas-response properties and the electrical transfer characteristics. The ZnO seed layer is formed by atomic-layer deposition (ALD), and the precursors for the nanorods are zinc nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) and hexamethylenetetramine ($(CH_2)6N_4$). When 15 ppm of NO gas was supplied in a gas chamber at $150^{\circ}C$ to analyze the sensing capability of the suggested devices, the sensitivity (S) was 4.5, showing that the nanorod-type devices respond sensitively to the external environment. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which showed that the oxygen deficiency of ZnO nanorods is higher than that of ZnO film, and confirms that the ZnO nanorod-type TFTs are advantageous for the fabrication of high-performance gas sensors.