• 제어로봇시스템학회논문지
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• 제10권7호
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• pp.604-610
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• 2004

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1168-1170
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• 2005

Nanoimprint Lithography(NIL) has increasingly been recognized as a key manufacturing technology for nanosized feature. One of the most important task for nanoimprint lithography is to provide the imprinting stamp with low price. The Stamp fabricated with Si based material by e-beam lithography, RIE is extremely expensive and its throughput is very limited and PDMS replica is too soft to hold high imprinting pressure.(>5atm) In this study, we present the imprinting stamp which can be easily replicated from original mold and is based on PVC film. Replication of original Si mold to PVC film was done by Hot embossing technique, ($120^{\circ}C$ of Temperature, 20 atm applied) As small as 100nm patterns were successfully transferred into PVC film. The size of stamp was up to 100mm in diameter.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.332-336
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• 2007

Temperature is an essential process variable in nanoimprint lithography(NIL) where the temperature varies between room temperature and above the glass transition temperature. To simulate NIL process, we employ both the Nose-Poincare method for temperature controlled molecular dynamics(MD) and force field for polymer material i.e. polymethyl methacrylate(PMMA), which is most widely selected as NIL resist. Nose-Poincare method, which convinces the conservation of Hamiltonian structure and time-reversal symmetry, overcomes the drawbacks inherent in the conventional methods such as Nose thermostat and Nose-Hoover thermostat. Thus, this method exhibits enhanced numerical stability even when the temperature fluctuation is large. To describe PMMA, we adopt the force field which account for bond stretch, bending, torsion, inversion, partial charge, and van der Waals energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.57-57
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• 2010

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.199-202
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

• 반도체디스플레이기술학회지
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• 제12권4호
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• pp.15-20
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• 2013

Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. In this paper, a pressure vessel type imprinting system was used to imprint patterns with two type pressure values (25 bar, 30 bar) and two type pressure keeping times (5 min, 10 min). The height of transferred pattern and the thickness of residual layer were measured and effects of pressurization conditions - pressure and pressure keeping time - on the pattern transfer in thermal NIL were investigated.

• 한국공작기계학회논문집
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• 제18권2호
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• pp.144-153
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• 2009

It is widely known that no-slip assumptions are often violated on regular basis in micrometer- or nanometer-scale fluid flow. In the case of cavity-filling process of nanoimprint lithography(NIL), slip phenomena take place naturally at the solid-to-liquid boundaries, that is, at the mold-to-polymer or polymer-to-substrate boundaries. If the slip or partial slip phenomena are promoted at the boundaries, the processing time of NIL, especially of thermal-NIL which consumes more tact time than that of UV-NIL, can be significantly improved. In this paper it is aimed to elucidate how the cavity-filling process of NIL can be influenced by the slip phenomena at boundaries and to what degree those phenomena increase the process rate. To do so, computational fluid dynamics(CFD) analysis of cavity filling process has been carried out. Also, the effect of mold pattern shape and initial thickness of polymer resist were considered in the analysis, as well.

• 한국표면공학회지
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• 제41권6호
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• pp.331-334
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• 2008

The replica of highly ordered nano-sphere array patterns were fabricated using hot embossing method. First, silica nano-sphere array on Si substrate was transferred to PVC film at $130^{\circ}C$ and 7 bar using hot embossing process. Then, silica nano-sphere array on PVC template was removed by soaking the PVC film in buffered oxide etcher. In order to form anti-stiction layer, the PVC template was coated with silicon dioxide layer and self-assembled monolayer. Through UV nanoimprint lithography with the fabricated flexible PVC template, highly ordered nano-sphere array pattern was imprinted on curved substrates with high fidelity.

• Fibers and Polymers
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• 제3권3호
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• pp.113-119
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• 2002

Nanoimprint lithography (NIL) is a nanofabrication method known to be a low cost method of fabricating nanoscale patterns as small as 6 m. This study is focused on understanding physical phenomena in the embossing of nano/micro scale structures with 100 nm minimum feature size. We present the effects of capillary force and width of stamp groove on flow behavior at the embossing stage through numerical experimentation. We also compare our numerical results with previous experimental results and discuss our results.

• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.93-98
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• 2013

Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. To successfully imprint a nanosized pattern with the thermal NIL, the process conditions such as temperature and pressure should be appropriately selected. This starts with a clear understanding of polymer material behavior during the thermal NIL process. In this paper, a filling process of the polymer resist into nanometer scale cavities during the thermal NIL at the temperature range, where the polymer resist shows the viscoelastic behaviors with consideration of stress relaxation effect of the polymer. In the simulation, the filling process and the residual layer formation are numerically investigated. And the effects of pressure and temperature on NIL process, specially the residual layer formation are discussed.