• Journal of the Korean Electrochemical Society
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• v.18 no.1
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• pp.31-37
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• 2015

Composition-controlled ternary components chalcogenides germanium tin sulfide ($Sn_xGe_{1-x}S$) nanoparticles were synthesized by a novel gas-phase laser photolysis reaction of tetramethyl germanium, tetramethyl tin, and hydrogen sulfide mixture. Subsequent thermal annealing of as-grown amorphous nanoparticles produced the crystalline orthorhombic phase nanoparticles. All these composition-tuned nanoparticles showed excellent cycling performance of the lithium ion battery. The germanium sulfide nanoparticles exhibit a maximum capacity of 1200 mAh/g after 70 cycles. As the tin composition (x) increases, the capacity maintains better at the higher discharge/charge rate. This novel synthesis method of tin germanium sulfide nanoparticles is expected to contribute to expand their applications in high-performance energy conversion systems.

• Archives of Plastic Surgery
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• v.45 no.2
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• pp.111-117
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• 2018

Background Fat grafting, or lipofilling, represent frequent clinically used entities. The fate of these transplants is still not predictable, whereas only few animal models are available for further research. Quantum dots (QDs) are semiconductor nanocrystals which can be conveniently tracked in vivo due to photoluminescence. Methods Fat grafts in cluster form were labeled with cadmium-telluride (CdTe)-QD 770 and transplanted subcutaneously in a murine in vivo model. Photoluminescence levels were serially followed in vivo. Results Tracing of fat grafts was possible for 50 days with CdTe-QD 770. The remaining photoluminescence was $4.9%{\pm}2.5%$ for the QDs marked fat grafts after 30 days and $4.2%{\pm}1.7%$ after 50 days. There was no significant correlation in the relative course of the tracking signal, when vital fat transplants were compared to non-vital graft controls. Conclusions For the first-time fat grafts were tracked in vivo with CdTe-QDs. CdTe-QDs could offer a new option for in vivo tracking of fat grafts for at least 50 days, but do not document vitality of the grafts.

• Applied Chemistry for Engineering
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• v.27 no.4
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• pp.380-385
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• 2016

Nanocelluloses, mainly cellulose nanofibrils (CNF) and cellulose nanocrystals (CNC, i.e., defect-free, rod-like crystalline residues after acid hydrolysis of fibers), have been the subject of recent interest. Due to the presence of hydroxyl groups on the surface of nanocelluloses, their surfaces are reactive, making them suitable candidates for reinforcing materials for manufacturing polymer composites. In this study, CNF was used as a reinforcing material for manufacturing cement composites. CNF was prepared by TEMPO (2,2,6,6,-tetramethyl piperidine-1-oxyl radical) oxidation procedure combined with extensive homogenization and ultrasonication. Transmission electron microscopy (TEM) analysis of the suspension showed the width of CNF between 10 and 15 nm. The compressive strength of cement composites containing 0.5% CNF was comparable to that of conventional cement composites. On the other hand, the tensile and flexural strength were improved by 49.7% and 38.8%, respectively, compared to those of conventional cement composites. Also, at an ambient condition, the degree of self-shrinkage reduction reached to 18.9% in one day, followed by 5.9% in 28 days after molding.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.848-853
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• 2010

We have grown GaN nanowires by the low pressure MOCVD method on Ni deposited oxidized Si surface and have established optimum conditions by observing surface microstructure and its photoluminescence. Optimum growth temperature of $880^{\circ}C$, growth time of 30 min, TMG source flow rate of 10 sccm have resulted in dense nanowires on the surface, however further increase of growth time or TMG flow rate has not increased the length of nanowire but has formed nanocrystals. On the contrary, the increase of ammonia flow has increased the length of nanowires and the coverage of nanowire over the surface. The shape of nanowire is needle-like with a Ni droplet at its tip; the length is tens of micron with more than 40 nm in diameter. Low temperature photoluminescence obtained from the sample at optimum growth condition has revealed several peaks related to exciton decay near band-edge, but does not show any characteristic originated from one dimensional quantum confinement. Strong and broad luminescence at 2.2 eV is observed from dense nanowire samples and this suggests that the broad band is related to e-h recombination at the surface state in a nanowire. The current result is implemented to the nanowire device fabrication by nanowire bridging between micro-patterned neighboring Ni catalysis islands.

• Journal of Ocean Engineering and Technology
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• v.25 no.6
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• pp.42-48
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• 2011

The present study makes three original contributions to nanoskinned Ti-6Al-4V materials. The nanoskins were fabricated on Ti-6Al-4V material using various surface treatments: deep rolling (DR), laser shot peening (LSP), and ultrasonic nanocrystal surface modification (UNSM). These surface treatments are newly developed techniques and are becoming more popular in industrial fields. A fatigue strength comparison at up to 106 cycles was conducted on these nanoskinned Ti-6Al-4V materials. Fatigue tests were carried out using MTS under axial loading tension-compression fatigue (R = -1, RT, 5 Hz, sinusoidal wave). The analysis of the crack initiation patterns in the nanoskinned Ti-6Al-4V materials found an interior originating crack pattern and surface originating crack type. Microscopic observation was mainly used to investigate the fatigue fractured sites. These surface modification techniques have been widely adopted, primarily because of the robust grade of their mechanical properties. These are mainly the result of the formation of a large-scale, deep, and useful compressive residual stress, the formation of nanocrystals by the severe plastic deformation (SPD) at the subsurface layer, and the increase in surface hardness.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.6
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• pp.541-548
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• 2015

We study the structural and functional characteristics of zinc oxide (ZnO) nanostructures that are grown on carbon nanotube (CNT) constructs via step-wise chemical vapor deposition (CVD). First, we optimize the CVD process to directly grow ZnO nanostructures on CNTs by controlling the growth temperature below $600^{\circ}C$, where CNTs can be sustained in a ZnO-growing oxidative atmosphere. We then investigate how the morphology and areal density of ZnO nanostructures evolve depending on process parameters, such as pressure, temperature, and gas feeding composition, while focusing on the effect of underlying CNT topology on ZnO nucleation and growth. Because various types of ZnO nanostructures, including nanowires, nanorods, nanoplates, and polycrystalline nanocrystals, can be conformally formed on highly conductive CNT platforms, this electrically addressable three-dimensional hybrid nanoarchitecture may better meet a wide range of nanoelectronic application-specific needs.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.221-221
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• 2013

Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.

• Advances in nano research
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• v.5 no.3
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• pp.261-279
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• 2017

Spectroscopic investigation of Si quantum dots (Si-QDs) embedded in silicon nitride was performed over a broad stoichiometry range to optimize light emission. Plasma-enhanced chemical vapor deposition was used to grow the $SiN_x$ films on Si (001) substrates. The film composition was controlled via the flow ratio of silane ($SiH_4$) and ammonia ($NH_3$) in the range of R = 0.45-1.0 allowed to vary the Si excess in the range of 21-62 at.%. The films were submitted to annealing at $1100^{\circ}C$ for 30 min in nitrogen to form the Si-QDs. The properties of as-deposited and annealed films were investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, Raman scattering and photoluminescence (PL) methods. Si-QDs were detected in $SiN_x$ films demonstrating the increase of sizes with Si excess. The residual amorphous Si clusters were found to be present in the films grown with Si excess higher than 50 at.%. Multi-component PL spectra at 300 K in the range of 1.5-3.5 eV were detected and nonmonotonous varying total PL peak versus Si excess was revealed. To identify the different PL components, the temperature dependence of PL spectra was investigated in the range of 20-300 K. The analysis allowed concluding that the "blue-orange" emission is due to the radiative defects in a $SiN_x$ matrix, whereas the "red" and "infrared" PL bands are caused by the exciton recombination in crystalline Si-QDs and amorphous Si clusters. The nature of radiative and no radiative defects in $SiN_x$ films is discussed. The ways to control the dominant PL emission mechanisms are proposed.

• Journal of Korean Society on Water Environment
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• v.23 no.5
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• pp.705-711
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• 2007

Green quantum-dot nanocrystal (QD525) with anti-microcystin monoclonal antibody was applied for detection of microcystin, a monocyclic peptide hepatotoxin, extracted from the culture of Microcystis aeruginosa. The presence of microcystin in the cell lysate was verified by HPLC analysis with UV absorbance at 238 nm. Microcystis cell extract exhibited fluorescence emission spectra, which peak was around 460 nm because of their complex organic substances. When a spherical QD525 antibody conjugates (10~20 nm in diameter) were bound to the microcystins in the Microcystis cell lysate, the fluorescence intensity of the primary peak at 525 nm diminished while the secondary emission peak at 460 nm slightly increased intensities. It is due to energy transfer from the primary (major) to the secondary (minor) peak, resulting from physical deformation of QD525 and different environmental factors. On the other hand, other cell extracts did not show any fluorescence emission change. This study is very available for detecting and monitoring the microcystin because it is one step assay without washing step and portable spectrophotometer makes on-site measurement possible. For health risk assessment of the microcystin, the reliable and rapid system to detect and quantify microcystin is seriously required.