• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.5-7
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• 2002

For quantitative N depth profiling, N profiles were measured in a～3 m Si oxynitride by low energy O$\sub$2+/sputtering and the result was calibrated with MEIS analysis of the N thickness and areal density. The quantitative depth profile of nitrogen showed the pileup of nitrogen atoms at the interface of ultrathin oxynitride films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.225-225
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• 2009

In this study, Nano and micro-filler mixture composites were fabricated by fixed value of $SiO_2$ nano-filler 0.4 [wt%] according to increase of $SiO_2$ micro-filler [wt%] from 1 to 10. Composites with a good dispersion of mixed $SiO_2$ Nano and micro-particles in the epoxy resins were prepared and experiments were performed to measure the dielectric breakdown strength properties with various temperature and thickness. The dielectric strength properties are compared and analyzed with respect to nano/micro-composites filled with $SiO_2$ fillers less than properties obtained for nanocomposites.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.317-327
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• 2014

In order to develop nano-devices with much lower power consumption for beyond-CMOS applications, the fundamental understanding and precise control of the electronic properties of ultrathin transition metal oxide (TMO) films are strongly required. The metal-insulator transition (MIT) is not only an important issue in solid state physics, but also a useful phenomenon for device applications like switching or memory devices. For potential use in such application, the electronic structures of MIT, observed for TMO nano-structures, have been investigated using a synchrotron radiation angle-resolved photoelectron spectroscopy system combined with a laser molecular beam epitaxy chamber and a scanning photoelectron microscopy system with 70 nm spatial resolution. In this review article, electronic structures revealed by soft X-ray nano-spectroscopy are presented for i) polarity-dependent MIT and thickness-dependent MIT of TMO ultrathin films of $LaAlO_3/SrTiO_3$ and $SrVO_3/SrTiO_3$, respectively, and ii) electric field-induced MIT of TMO nano-structures showing resistance switching behaviors due to interfacial redox reactions and/or filamentary path formation. These electronic structures have been successfully correlated with the electrical properties of nano-structured films and nano-devices.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1962-1966
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• 2012

Boehmite sols have been prepared by crystallization of amorphous aluminum hydroxide gel obtained by hydrolysis and peptization of aluminum using acetic acid. The size of the boehmite crystallites could be controlled by Al molar concentration in amorphous gel by means of controlling grain growth at nucleation stage. The size of boehmite increases as a function of Al molar concentration. With increasing boehmite crystallite size, the $d_{(020)}$ spacing and the specific surface area decreases, whereas the pore volume increases along with pore size. Especially, the pore size of the boehmite sol particles is comparable to the crystallite size along the b axis, suggesting that the fibril thickness along the b axis among the crystallite dimensions of the boehmite contributes to the pore size. Therefore, the physical properties of boehmite sols can be determined by the crystallite size controlled as a function of initial Al concentration.

• Proceedings of the Korean Magnestics Society Conference
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• 1995.05a
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• pp.90-91
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• 1995

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.41-46
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• 2009

The rheological properties of highly concentrated Ag nano sol depending on particle size were studied. The Ag nano sol was prepared by reducing the Ag ion in aqueous solution. The size of Ag nano particle was controlled by two steps of nucleation and growth, and the thickness of adsorption layer was varied by molecular weight of polyelectrolytes. The polyelectrolytes acted as not only ionic complex agent in ionic state and but also dispersant after formation of Ag nano sol. The effective volume was controlled by combination of varying the molecular weight of polyelectrolytes and the size Ag nano sol. The particle size and the viscosity of nano sol were characterized by particle size analyzer, HR-TEM and cone & plate viscometer. It was found that the 10 nm and 40 nm-sized Ag nano sols were prepared by controlling the nucleation and growth steps, respectively. Finally, we could prepare highly concentrated Ag nano sol over 50 wt%.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.6
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• pp.459-464
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• 2008

We present a novel microcantilever device with nano-interdigitated electrodes (nano-IDEs) and DNA selective immobilization on the nano-IDEs for biosensing applications. Using the nano-IDEs and cyclic voltammetric methods, we have achieved selective immobilization of DNA with submicrometer spatial resolution on a freestanding microcantilever. $70{\sim}500\;nm$-wide gold (Au) nano-IDEs are fabricated on a low-stress SiNx microcantilever with dimensions of $100{\sim}600\;{\mu}m$ in length, and $15{\sim}60\;{\mu}m$ in width, with a $0.5\;{\mu}m$ thickness using electron beam lithography and bulk micromachining. Streptavidin is selectively deposited on one side of the nano-IDEs using cyclic voltammetry at a scan rate of 0.1 V/s with a range of $-0.2{\sim}0.7\;V$ during $1{\sim}5$ cycles. The selective deposition of dsDNA is confirmed by fluorescence microscopy after labeling with YOYO-1 dye.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.366-370
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• 2022

A 12 ㎛ pixel-sized 360 × 240 microbolometer focal plane array (MBFPA) was fabricated using a complementary metaloxide-semiconductor (CMOS)-compatible process. To release the MBFPA membrane, an amorphous carbon layer (ACL) processed at a low temperature (<400 ℃) was deposited as a sacrificial layer. The thermal time constant of the MBFPA was improved by using serpentine legs and controlling the thickness of the SiNx layers at 110, 130, and 150 nm on the membrane, with response times of 6.13, 6.28, and 7.48 msec, respectively. Boron-doped amorphous Si (a-Si), which exhibits a high-temperature coefficient of resistance (TCR) and CMOS compatibility, was deposited on top of the membrane as an IR absorption layer to provide heat energy transformation. The structural stability of the thin SiNx membrane and serpentine legs was observed using field-emission scanning electron microscopy (FE-SEM). The fabrication yield was evaluated by measuring the resistance of a representative pixel in the array, which was in the range of 0.8-1.2 Mohm (as designed). The yields for SiNx thicknesses of SiNx at 110, 130, and 150 nm were 75, 86, and 86%, respectively.

• Tribology and Lubricants
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• v.35 no.2
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• pp.106-113
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• 2019

We investigated the application of tetrahedral amorphous carbon (ta-C) coatings to fabricate a glass lens manufactured using a glass molding process (GMP). In this work, ta-C coatings with different thickness (50, 100, 150 and 200 nm) were deposited on a tungsten carbide (WC-Co) mold using the X-bend filter of a filtered cathode vacuum arc. The effects of thickness on mechanical and tribological properties of the coating were studied. These ta-C coatings were characterized by atomic force microscopy, scanning electron microscopy, nano-indentation measurements, Raman spectrometry, Rockwell-C tests, scratch tests and ball on disc tribometer tests. The nano-indentation measurements showed that hardness increased with an increase in coating thickness. In addition, the G-peak position in the Raman spectra analysis was right shifted from 1520 to $1586cm^{-1}$, indicating that the $sp^3$ content increased with increasing thickness of ta-C coatings. The scratch test showed that, compared to other coatings, the 100-nm-thick ta-C coating displayed excellent adhesion strength without delamination. The friction test was carried out in a nitrogen environment using a ball-on-disk tribometer. The 100-nm-thick ta-C coating showed a low friction coefficient of 0.078. When this coating was applied to a GMP, the life time, i.e., shot counts, dramatically increased up to 2,500 counts, in comparison with Ir-Re coating.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.34-38
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• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.