• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.39-39
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• 2011

Surface hardening mechanism of AA 2024 was investigated when shot peeningprocess with shot ball of Zn alloy was applied. Zn alloy was transferred into surface region of AA 2024, forming lamellar structure of Al and Zn phase. Nanocrystallization of AA 2024 and alloyed Zn phase was achieved by the different mechanisms. Furthermore, precipitations in AA 2024 remained undissolved. Lamellar structure with different nano-sized grains of two different phase and randomly distributed precipitations contributed to the surface hardening.

• Progress in Superconductivity and Cryogenics
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• v.9 no.2
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• pp.19-22
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• 2007

We report the phase and microstructure evolutions of metal trifluoroacetate (TFA) precursor films in the TFA-MOD process of YBCO films on the LAO (100) substrates. It was confirmed that the precursor films were decomposed into $Y_2O_3$, $BaF_2$, and CuO nanoparticles after the initial heat treatment up to 400$^{\circ}C$. After a subsequent heat treatment at higher temperatures ranging from 700 to 850$^{\circ}C$ for 2 h, these nano-sized phases are converted into YBCO films. High Jc(77K, sf)-YBCO thin films (over 2 MA/$cm^2$) were successfully fabricated with firing temperatures ranging from 775 to 850$^{\circ}C$ for 2 h, where films were composed of dense microstructures with large grains.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.3
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• pp.121-127
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• 2007

We have applied mechanical alloying (MA) to get $Mg_2Si$ thermoelectric material with nano-sized grains. An optimal milling and heat treatment conditions to obtain the single phase of $Mg_2Si$ compound with fine microstructure were investigated by X-ray diffraction and differential scanning calorimetry (DSC) measurement. The $Mg_{66.7}Si_{33.3}$ MA samples ball-milled for $20{\sim}180\;hrs$ exhibit two broad exothermic heat releases around $220^{\circ}C$ and $570^{\circ}C$. On the other hand, MA sample ball-milled far 260 hrs exhibits only a sharp exothermic peak at $230^{\circ}C$ Single phase Mg2Si powder can be obtained by MA of $Mg_{66.7}Si_{33.3}$ mixture for 60 hours and subsequently heated up to $620^{\circ}C$. Sintering of the MA powders was performed in a spark plasma sintering (SPS) machine using graphite dies at $800{\sim}900^{\circ}C$ under 50 MPa. The shrinkage of sintering sample during SPS was significant at about $200^{\circ}C$. All compact bodies have a high relative density above 94% with metallic glare on the surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.187-192
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• 2004

We try to use isopropanol which has low boiling point to prepare ZnO thin films at low temperature. ZnO thin films were prepared by sol-gel spin-coating method using zinc acetate dehydrate-isopropanol-monoethanolamine (MEA) solution. The c-axis preferred orientation and optical properties of ZnO films with preheating temperature have been investigated. ZnO thin films were preheated at 200 to $300^{\circ}C$ with an interval of $25^{\circ}C$ and post-heated at $650^{\circ}C$. The ZnO film preheated at $275^{\circ}C$ and post-heated at $650^{\circ}C$ was highly oriented along c-axis (002) plane, and the surface with homogeneous and dense microstructures was formed having nano-sized grains. The optical transmittance was above 90 % in the visible range and exhibited absorption edges at 368 nm wavelength.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.118-123
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• 2012

GDC20($Ce_{0.8}Gd_{0.2}O_{1.9}$) powder was synthesized from Ce and Gd nitrate solutions using ammonium carbonate($(NH_4)_2CO_3$) as a precipitant. Attrition-milling of the powder, which had been calcined at $700^{\circ}C$ for 4 h, decreased an average particle size of 2.2 ${\mu}m$ to 0.5 ${\mu}m$. The milled powder consisted of nano-sized spherical primary particles. Due to the excellent sinterability of the powder, sintering of the powder compacts for 4 h showed relative densities of 80% at 1000 $^{\circ}C$ and 96.5% at $1200^{\circ}C$, respectively. Densification was found to almost complete at $1300^{\circ}C$, resulting in a dense and homogeneous microstructure with a relative density of 99.5%. The grains of ~0.2 ${\mu}m$ in size at $1200^{\circ}C$ grew to ~1 ${\mu}m$ in size at $1300^{\circ}C$ as a result of a rapid grain growth.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.291-293
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• 1997

In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.760-765
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• 2011

Znic sulfide (ZnS) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The substrate temperature varied from room temperature (RT) to $500^{\circ}C$. The structural and optical properties of ZnS films were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive analysis of X-ray (EDAX) and UV-visible transmission spectra. The XRD analyses reveal that ZnS films have cubic structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM images indicate that ZnS films deposited at $400^{\circ}C$ have nano-sized grains with a grain size of ~ 67 nm. Then films exhibit relatively high transmittance of 80% in the visible region, with an energy band gap of 3.71 eV. One obvious result is that the energy band gap of the film increases with increasing the substrate temperatures.

• Journal of Powder Materials
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• v.7 no.3
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• pp.143-148
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• 2000

NiAl alloy powders were prepared by mechanical alloying method and bulk specimens were produced using hot isostatic pressing techniques. This study focused on the transformation behavior and properties of Ni-Al mechanically alloyed powders and bulk alloys. Transformation behavior was investigated by differential scanning calorimeter (DSC), XRD and TEM. Particle size distribution and microstructures of mechanically alloyed powders were studied by particle size analyzer and scanning electron microscope (SEM). After 10 hours milling, XRB peak broadening appeared at the alloyed powders with compositions of Ni-36at%Al to 40at%Al. The NiAl and $Ni_3Al$ intermetallic compounds were formed after water quenching of solution treated powders and bulk samples at $1200^{\circ}C$, but the martensite phase was observed after liquid nitrogen quenching of solution treated powders. However, the formation of $Ni_3Al$ intermetallic compounds were not restricted by fast quenching into liquid nitrogen. It is considered to be caused by fast diffusion of atoms for the formation of stable $\beta$(NiAl) phase and $Ni_3Al$ due to nano sized grains during quenching. Amounts of martensite phase increased as the composition of aluminium component decreased in the Ni-Al alloy, which resulted in the increasing damping properties.

• Journal of Powder Materials
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• v.11 no.3
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• pp.247-252
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• 2004

Recently, it has been found that mechanical alloying (MA) facilitates the nanocomposites formation of metal-metal oxide systems through solid-state reduction during ball milling. In this work, we studied the MA effect of Fe$_{3}$O$_{4}$-M (M = Al, Ti) systems, where pure metals are used as reducing agents. It is found that composite powders in which $Al_{2}$O$_{3}$ and TiO$_{2}$ are dispersed in $\alpha$-Fe matrix with nano-sized grains are obtained by mechanical alloying of Fe$_{3}$O$_{4}$ with Al and Ti for 25 and 75 hours, respectively. It is suggested that the large negative heat associated with the chemical reduction of magnetite by aluminum is responsible for the shorter MA time for composite powder formation in Fe$_{3}$O$_{4}$-Al system. X-ray diffraction results show that the reduction of magnetite by Al and Ti if a relatively simple reaction, involving one intermediate phase of FeAl$_{2}$O$_{4}$ or Fe$_{3}$Ti$_{3}$O$_{10}$. The average grain size of $\alpha$-Fe in Fe-TiO$_{2}$ composite powders is in the range of 30 nm. From magnetic measurement, we can also obtain indirect information about the details of the solid-state reduction process during MA.