• Polymer(Korea)
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• v.29 no.5
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• pp.440-444
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• 2005

An increase in the surface area of drugs by reducing particle sizes from microns to nanometers has been known as an efficient method to improve the bioavailability of water-insoluble drugs. To prevent drug nanoparticles from aggregation during the processes of drug formulation, a limited number of pharmaceutical inactive ingredients such as hydroxypropyl cellulose has been employed as stabilizers or dispersants. In this study, copolymers of hydrophilic and hydrophobic amino acids were synthesized by the ring opening polymerization of their N-carboxyanhydride monomers and evaluated as novel candidates to stabilize the nanoparticles of a water insoluble drug, naproxen. Naproxen nanoparticles stabilized by synthesized amino acid copolymers were successfully prepared in the size of $200\~500nm$ in 60 min by a wet comminution process. Particle size analysis showed that the effective stabilization performance of copolymers required the hydrophobic moiety content to be higher than $10 mol\%$. However, the molecular weight and morphology of copolymers was not the critical parameters in determining the particle size reduction. Their particle size was found to be stable up to 14 days without significant aggregation.

• Clean Technology
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• v.24 no.4
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• pp.332-338
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• 2018

Currently graphite is used as an anode active material for lithium ion battery. However, since the maximum theoretical capacity of graphite is limited to $372mA\;h\;g^{-1}$, a new anode active material is required for the development of next generation high capacity and high energy density lithium ion battery. The maximum theoretical capacity of Si is $4200mA\;h\;g^{-1}$, which is about 10 times higher than the maximum theoretical capacity of graphite. However, since the volume expansion rate is almost 400%, the irreversible capacity increases as the cycle progresses and the discharge capacity relative to the charge is remarkably reduced. In order to solve these problems, it is possible to control the particle size of the Si anode active material to reduce the mechanical stress and the volume change of the reaction phase, thereby improving the cycle characteristics. Therefore, in order to minimize the decrease of the charge / discharge capacity according to the volume expansion rate of the Si particles, the improvement of the cycle characteristics was carried out by pulverizing Si by a dry method with excellent processing time and cost. In this paper, Si is controlled to nano size using vibrating mill and the physicochemical and electrochemical characteristics of the material are measured according to experimental variables.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.