• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.267-272
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• 2006

Optical waveguide based on symmetric and asymmetric Mach-Zehnder interferometer(MZI) type was designed, fabricated and measured the optical characteristics for the application of biosensor. The wavelength of the input optical signal for the device was 1550 nm. And the difference of refractive index was $0.45\;{\Delta}\%$ between core and cladding of the device. The TM(Transverse Magnetic) mode optical properties of the biosensor were analyzed with the refractive index variation of gold thin film deposited for overclad. Nowadays, nano-photonic crystal structures have been paied much attention for its high optical sensitivity. There is a technique to realize the structure, which is called Dip-Pen Nanolithography(DPN) process. The process requires a nano-scale process patterning resolution and high reliability. In this paper, two dimensional nano-photonic crystal array on the surface was proposed for improving the sensitivity of optical biosensor. And the Dip-Pen Nanolithogrphy process was investigated to realize it.

• 한국레이저가공학회지
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• 제15권3호
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• pp.1-6
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• 2012

The friction force of patterned needle in elastomer have been investigated to verify the application for bio and plastic industry. The micro pattern on the needle surface were prepared by 266 nm, 20 ns laser and 800 nm, 220 fs laser, which were able to generate the different surface roughness. The friction force was measured by the load cell of 10 N capacity. As the results, the friction force of no patterned needle is almost constant during the needle penetrates the silicone rubber sample. However, the needle having asperities shows the variation of the friction force. The higher the surface roughness is, the smaller the friction force is until the surface roughness is very high. In our experiment conditions, the reduction of the friction force by 20 % compared to no pattern needle was achieved with straight and $50{\mu}m$ discrete line generated by 266 nm, 20 ns laser.

• 통합자연과학논문집
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• 제4권4호
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• pp.311-314
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• 2011

Application of self-assembled monolayers (SAMs) to the fabrication of organic thin film transistor has been recently reported very often since it can help to provide ohmic contact between films as well as to form simple and effective electrode pattern. Accordingly, quality of these ultra-thin films is becoming more imperative. In this study, in order to manufacture a high quality SAM pattern, a hydrophobic alkylsilane monolayer and a hydrophilic aminosilane monolayer were selectively coated on $SiO_2$ surface through the consecutive procedures of a micro-contact printing (${\mu}CP$) and dip-coating methods under extremely dry condition. On a SAM pattern cleaned with SC1 solution immediately after ${\mu}CP$, poly(3,4-ethylenedioxythiophene) (PEDOT) source and drain electrode array were very selectively and nicely vapour phase polymerized. On the other side, on a SC1-untreated SAM pattern, PEDOT array was very poorly polymerized. It strongly suggests that the SC1 cleaning process effectively removes unwanted contaminants on SAM pattern, thereby resulting in very selective growth of PEDOT electrode pattern.

• Macromolecular Research
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• 제13권5호
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• pp.435-440
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• 2005

This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nano-pattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• 한국표면공학회지
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• 제51권6호
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• pp.387-392
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• 2018

Nanopatterning is one of the essential nanotechnologies to fabricate electronic and energy nanodevices. Therefore, many research group members made a lot of efforts to develop simple and useful nanopatterning methods to obtain highly ordered nanostructures with functionality. In this study, in order to achieve pattern formation of three-dimensional (3D) hierarchical nanostructures, we introduce a simple and useful patterning method (nano-transfer printing (n-TP) process) consisting of various linewidths for diverse materials. Pt and $WO_3$ hybrid line structures were successfully stacked on a flexible polyimide substrate as a multi-layered hybrid 3D pattern of Pt/WO3/Pt with line-widths of $1{\mu}m$, $1{\mu}m$ and 250 nm, respectively. This simple approach suggests how to fabricate multiscale hybrid nanostructures composed of multiple materials. In addition, functional hybrid nanostructures can be expected to be applicable to various next-generation electronic devices, such as nonvolatile memories and energy harvesters.

• 한국재료학회지
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• 제29권1호
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• pp.59-64
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• 2019

This study investigates the optical characteristics of InGaN multiple quantum wells(MQWs) light emitting diodes(LEDs) on planar sapphire substrates(PSSs), nano-sized PSS(NPSS) and micro-sized PSS(MPSS). We obtain the results as the patterning size of the sapphire substrates approach the nanometer scale: The light from the back side of the device increases and the total light extraction becomes larger than the MPSS- and planar-LEDs. The experiment is conducted by Monte Carlo ray-tracing, which is regarded as one of the most suitable ways to simulate light propagation in LEDs. The results show fine consistency between simulation and measurement of the samples with different sized patterned substrates. Notably, light from the back side becomes larger in the NPSS LEDs. We strongly propose that the increase in the light intensity of NPSS LEDs is due to an abnormal optical distribution, which indicates an increase of extraction probability through NPSS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.86-89
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• 2004

Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• Elastomers and Composites
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• 제34권1호
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• pp.45-52
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• 1999

본 논문에서는 미세 상분리된 블럭 공중합체 박막의 특이상에서 금 입자들이 어떻게 자기응집(self assemble) 되고 잘 배열된 패턴을 형성하는지를 살펴보았다. 본 연구에서는 원통형 모폴로지를 갖는 PS-PB-PS 삼블럭 공중합체(30wt% PS) 박막(${\sim}100nm$)을 0.1wt% 톨루엔 용액으로부터 캐스팅하여 고분자 박막 형판(template)으로 사용하였다. 각각의 상이한 용매 증발조건으로부터 PB matrix내에 수평배열 PS cylinder와 수직 PS cylinder를 함께 갖는 막이 얻어졌다. 블럭 공중합체박막의 표면 및 bulk 몰폴로지를 살펴보기 위하여 단면투과전자현미경(TEM)을 사용하였다. Nano-scale 패턴을 얻기 위하여는 소량의 금입자를 블럭 공중합체 박막상에 증발시켰다. 캐스팅된 상태 그 대로의 박막형판이 사용되어질때 금입자들은 표면 장력이 적은 PB상에 우선적으로 자기응집(self as-semble)하여 비교적 잘 배열된 nano-scale의 패턴을 형성하였다. 그러나 열처리(annealing)에 의하여 표면장력이 적은 PB-rich충이 형성된 후에는 금입자의 자기응집에 의한 패턴은 관찰되지 않았다.

• 폴리머
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• 제28권4호
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• pp.305-313
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• 2004

본 연구는 나노 복화공정을 이용하여 마이크로 혹은 나노공정에 응용이 가능한 형상모형 제작공정 개발과 폴리디메틸실록산 (polydimethylsiloxane)를 이용하여 만들어진 형상모형의 몰드로 나노급 정밀도의 폴리디메틸실록산 형상을 복제하는 공정에 관한 것이다. 본 연구에서 제안한 나노 복화공정은 복잡한 형상모형 (pattern)이나 2차원 형상을 CAD 파일 없이 비트맵 그림파일을 이용하여 직접적으로 200nm 정밀도를 가지는 형상으로 만들 수 있다. 형상모형은 펨토초 레이저를 이용하여 이광자 흡수 중합법으로 제작하기 때문에 형상의 정밀도는 레이저 범의 회절한계 이하로 얻을 수 있다. 이렇게 제작된 마스터 형상모형은 본 연구에서 제안한 진공압력차이법으로 폴리디메틸실록산 몰드를 제작하여 기존의 제작방법에 비하여 정밀한 제작이 가능함을 보였으며 또한 제작된 몰드를 이용하여 양각의 플리디메틸실록산 스탬프를 제작하였다.