• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.973-976
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• 2006

In this paper, the inorganic multi-layer encapsulation of thin film was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Ethylene Terephthalate(PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the water vapor transmission rate (WVTR) for PET can be reduced from level of $0.57g/m^2/day$ (bare substrate) to $1^{\ast}10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicate that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Journal of Magnetics
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• v.20 no.4
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• pp.331-335
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• 2015

The ferromagnetic and electronic structure for the $Al_xGa_{1-x}P$ and Mn-doped $AlGaP_2$ was studied by using the self-consistent full-potential linear muffin-tin orbital method. The lattice parameters of un-doped $Al_xGa_{1-x}P$ (x = 0.25, 0.5, and 0.75) were optimized. The band-structure and the density of states of Mn-doped $AlGaP_2$ with or without the vacancy were investigated in detail. The P-3p states at the Fermi level dominate rather than the other states. Thus a strong interaction between the Mn-3d and P-3p states is formed. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the (Mn-3d)-(P-3p)-(Mn-3d) hybridization, which is attributed by the partially filled P-3p bands. The holes are mediated with keeping their 3d-characters, therefore the ferromagnetic state is stabilized by this double-exchange mechanism.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.387-394
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• 2005

In order to design SOI CMOS image sensors, SOI MOSFET model parameters were extracted using the equation of bulk MOSFET model parameters and were optimized using SPICE level 2. Simulated I-V characteristics of the SOI NMOSFET using the extracted model parameters were compared to the experimental I-V characteristics of the fabricated SOI NMOSFET. The simulation results agreed well with experimental results. A unit pixel for SOI CMOS image sensors was designed and was simulated for the PPS, APS, and logarithmic circuit using the extracted model parameters. In these CMOS image sensors, a nano-wire MOSFET photodetector was used. The output voltage levels of the PPS and APS are well-defined as the photocurrent varied. It is confirmed that SOI CMOS image sensors are faster than bulk CMOS image sensors.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.47 no.6
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• pp.154-163
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• 2015

Because of acute or chronic intoxication by carbon disulfide, viscose rayon industry is strictly subjected to environment regulatory approval. Recently, non-wood fibers are frequently considered as a raw materials for the manufacture of specialty paper for the higher physical strength and functionality. Among the non-wood fibers, hemp bast fiber is one of the most widely used materials in viscose rayon yarn industries. In this study, the handsheet for manufacturing the viscose rayon yarn was prepared with wood pulp fibers and hemp bast fibers. The proper mixing ratio of wood fibers and hemp bast fibers with dry-strength agent and nano-celluloses was analysed in terms of physical and mechanical strength of sheet for viscose rayon yarn. The papermaking conditions for high mechanical strength of sheet were obtained by mixing the SwBKP and HwBKP fibers with freeness level of 200 mL CSF. The dual polymer system by controlling the addition ratio of PVAm and anionic PAM was also important. The addition of nano-cellulose into wet-end furnishes increased the physical strength of sheet, and improved the paper structure for the production of viscose rayon yarn.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.19 no.6
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• pp.614-619
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• 2009

The STW(servo track writing) system which is the process of writing servo signals on disks before assembling in drives uses the spindle motor-chuck mechanism to realize low cost because the spindle motor-chuck mechanism has merit which can simultaneously write multi-disk by piling up disks in hub. Therefore, when the spindle motor-chuck mechanism of horizontal type operates in high rotation speed it is necessary to reduce the effect of RRO(repeatable run-out) and NRRO(non-repeatable run-out) to achieve the high precision accuracy of nano-meter level during the STW process. In this paper, we analyzed that the slip in assembly surfaces can be caused by the mechanical tolerance and clamping force in hub-chuck mechanism and can affect NRRO performance. We designed springs for centering and clamping considering centrifugal force by the rotation speed and assembly condition. The experimental result showed NRRO performance improves about 30 % than case of weak clamping force. The result shows that the optimal design of the spindle motor-chuck mechanism can effectively reduce the effect of NRRO and RRO in STW process.

• Journal of Powder Materials
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• v.27 no.5
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• pp.365-372
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• 2020

Predicting the quality of materials after they are subjected to plasma sintering is a challenging task because of the non-linear relationships between the process variables and mechanical properties. Furthermore, the variables governing the sintering process affect the microstructure and the mechanical properties of the final product. Therefore, an artificial neural network modeling was carried out to correlate the parameters of the spark plasma sintering process with the densification and hardness values of Ti-6Al-4V alloys dispersed with nano-sized TiN particles. The relative density (%), effective density (g/㎤), and hardness (HV) were estimated as functions of sintering temperature (℃), time (min), and composition (change in % TiN). A total of 20 datasets were collected from the open literature to develop the model. The high-level accuracy in model predictions (>80%) discloses the complex relationships among the sintering process variables, product quality, and mechanical performance. Further, the effect of sintering temperature, time, and TiN percentage on the density and hardness values were quantitatively estimated with the help of the developed model.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.49-54
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• 2020

We studied the electronic and magnetic properties for the Mn-doped chalcopyrite (CH) AlAs, GaAs, and AlGaAs₂ semiconductor by using the first-principles calculations. The chalcopyrite AlGaP₂, AlGaAsP, and AlGaAs₂ compounds have a semiconductor characters with a small band-gap. The interaction between Mn-3d and As-4p states at the Fermi level dominate rather than the other states. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the Mn(3d)-As(4p) strong coupling, which is attributed by the partially filled As-4p bands. The holes are mediated with keeping their 3d-electrons, therefore the ferromagnetic state is stabilized by this double-exchange mechanism. We noted that the ferromagnetic state with high magnetic moment is originated from the hybridized As(4p)-Mn(3d)-As(4p) interaction mediated by the holes-carrier.

• 한국IT서비스학회:학술대회논문집
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• 2009.05a
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• pp.270-276
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• 2009

This paper outlines opportunities and challenges in the Implementation of BPEL based WFMS(Work Flow Management System) for the MES(Manufacturing Execution Systems) level in semiconductor manufacturing. At present, the most MES that are composed of several hundreds of applications in semiconductor wafer fabrication shop have the same problems as others about flexibility and adaptability. When a plant has to produce new product mix, remodel the manufacturing execution process, or replace obsolete equipments, the principal road blocks for responding to new manufacturing environment are inflexible communication infrastructure among the manufacturing process components and the difficulty in porting existing application software to new configurations. In this paper, the issues about BPEL standard, used for the flexibility of Workflow Management System, are presented. We introduce the integrated development framework named nanoFlow which is optimized for developing the BPEL based WFMS application for automated manufacturing system. We describe a WFMS implemented with using nanoFlow framework, review and evaluate the system in terms of flexibility and adaptability.

• Journal of Magnetics
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• v.10 no.4
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• pp.163-170
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• 2005

The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.