• 한국세라믹학회지
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• 제51권5호
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• pp.442-446
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• 2014

Influences of Co and inhibitors from nano-sized WC materials were observed in the sintering process. VC and $Cr_3C_2$ were used as inhibitors. The crystal structure and surface images of sintered nano-sized WC materials, as functions of Co and inhibitors, were evaluated by XRD and FE-SEM analyses. The relative densities of sintered nano-sized WC materials did not change even with increased quantity of Co and increased temperature. The density of sintered nano-sized WC materials with inhibitors was lower than that of sintered nano-sized WC materials without inhibitors. No difference in hardness due to change of inhibitors was found.

• 산업기술연구
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• 제25권B호
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• pp.127-133
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• 2005

Manufacturing methods of Nano particles can be distinguished by top-down technology as physical method and bottom-up technology as chemical synthetic method. Top-down technology is a kind of method for making microstructure as like carving after forming a macroscopic structure in advance and its typical methods are ball milling, gas condensation method and so on. Nano Particles synthesized by bottom-up method have got to do dispersing process for using them as actual nano particles because their viscosity are very strong and so easy to shape cohesive substances. Therefore, this study is about a particle separating device which separates a certain constant size of grains processed already in mill and mixer because we mostly use media agitating mill as a device of milling and dispersing and we necessarily use very slight balls as media for manufacturing nano particles in the machine. The centrifugal device has been designed for passing and separating below a certain type of grain size after final process of particles in the mill.

• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.257-261
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• 2006

Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.36-37
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• 2006

This study aims to investigate the usage of nano-scale particles in a micro metal injection molding ($\mu$-MIM) process. Nanoscale particle is effective to improve transcription and surface roughness in small structure. Moreover, the effects of hybrid micro/nano particles, Cu/Cu and SUS/Cu were investigated. Small dumbbell specimens were produced using various feedstocks prepared by changing binder content and fraction of nano-scale Cu particle (0.3 and $0.13{\mu}m$ in particle size). The effects of adding the fraction of nano-scale Cu powder on the melt viscosity of the feedstock, microstructure, density and tensile strength of sintered parts were discussed.

• 대한화학회지
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• 제56권1호
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• pp.159-163
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• 2012

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 한국결정성장학회지
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• 제15권4호
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• pp.162-167
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• 2005

건조공정 중인 다공성 물질의 물성은 재료의 비균질성 즉 전위, 입자, 입계, 균열, 기공과 같은 미시적인 결함인자들의 영향을 받는다. 따라서 다공성 물질의 건조공정을 전산 시뮬레이션하기 위해서는 원자 스케일 해석을 통한 미시적 물성을 알아야 한다. 본 연구에서는 분자동역학 시뮬레이션을 이용하여 원자 모델을 구성하고 원자 상호간 거동을 예측하여 재료의 미시적 물성을 계산하였다. 이렇게 구한 탄성계수, 열팽창계수, 체적 열용량은 실험 및 이론에 기초한 결과들과 비교하여 검증하였다.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1001-1006
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• 2005

A new fabrication method is proposed to form the stacked polysilicon gate by nitridation in $N_2$ atmosphere using conventional LP-CVD system. Two step stacked layers with an amorphous layer on top of a polycrystalline layer as well as three step stacked layers with polycrystalline films were fabricated using the proposed method. SIMS profile showed that the proposed method would successfully create the nitrogen-rich layers between the stacked polysilicon layers, thus resulting in effective retardation of dopant diffusion. It was observed that the dopants in stacked films were piled-up at the interface. TEM image also showed clear distinction of stacked layers, their plane grain size and grain mismatch at interface layers. Therefore, the number of stacked polysilicon layers with different crystalline structures, interface position and crystal phase can be easily controlled to improve the device performance and reliability without any negative effects in nano-scale CMOSFETs.

• 한국표면공학회지
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• 제47권6호
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• pp.293-296
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• 2014

Fe-Ni has been of great interest because it is known as one of low thermal expansion alloys as various application areas. This alloy was fabricated by electroforming process, and effect of heat treatment on thermal expansion and hardness was investigated. Nano-crystalline structure of 13.3 - 63.5 nm in size was observed in the as-deposited alloy. To investigate the effect of heat treatment on grain growth and mechanical/thermal properties, we conducted hardness and coefficient of thermal expansion (CTE). From this, we confirmed these properties were varied by heat treatment. In this nano-crystalline alloy, we could observe abnormal behavior in thermal expansion between $350-400^{\circ}C$. Additionally, an abrupt change in hardness has also been observed. However, once the grains grow up to micro-sized the mechanical and thermal properties mentioned above were stabilized similar to those of bulk alloys due to heat treatment.

• 한국분말재료학회지
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• 제9권3호
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• pp.182-188
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• 2002

Conventional Fe-Co alloys are important soft magnetic materials that have been widely used in industry. Compared to its polycrystalline counterpart, the nanostructured materials have showed superior magnetic properties, such as higher permeability and lower coercivity due to the single domain configuration. However, magnetic properties of nanostructured materials are affected in complicated manner by their microstructure such as grain size, internal strain and crystal structure. Thus, studies on synthesis of nanostructured materials with controlled microstructure are necessary for a significant improvement in magnetic properties. In the present work, starting with two powder mixtures of Fe and Co produced by mechanical alloying (MA) and hydrogen reduction process (HRP), differences in the preparation process and in the resulting microstructural characteristics will be described for the nano-sized Fe-Co alloy particles. Moreover, we discuss the effect of the microstructure such as crystal structure and grain size of Fe-Co alloys on the magnetic properties.