• Korean Journal of Materials Research
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• v.25 no.11
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• pp.607-611
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• 2015

The microstructural evolution of Grade 91 tempered martensite ferritic steels heat treated at $760{\sim}1000^{\circ}C$ for two hours was investigated using scanning electron microscopy(SEM), energy disperse spectroscopy(EDS), electron backscattered diffraction (EBSD), and transmission electron microscopy(TEM); a microhardness tester was also employed, with a focus on the grain and precipitate evolution process as well as on the main hardening element. It was found that an evolution of tempered martensite to ferrite($760{\sim}850^{\circ}C$), and to fresh martensite($900{\sim}1000^{\circ}C$), occurred with the increase of temperature. Simultaneously, the parabolic evolution characteristics of the low angle grain boundary(LAGB) increased with the increase of the heating temperature(highest fraction of LAGB at $925^{\circ}C$), indicating grain recovery upon intercritical heating. The main precipitate, $M_{23}C_6$, was found to be coarsened slightly at $760{\sim}850^{\circ}C$; it then dissolved at $850{\sim}1000^{\circ}C$. Besides this, $M_3C$ cementite was formed at $900{\sim}1000^{\circ}C$. Finally, the experimental results show that the hardness of the steel depended largely on the matrix structure, rather than on the precipitates, with the fresh martensite showing the highest hardness value.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.442-446
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• 2014

Influences of Co and inhibitors from nano-sized WC materials were observed in the sintering process. VC and $Cr_3C_2$ were used as inhibitors. The crystal structure and surface images of sintered nano-sized WC materials, as functions of Co and inhibitors, were evaluated by XRD and FE-SEM analyses. The relative densities of sintered nano-sized WC materials did not change even with increased quantity of Co and increased temperature. The density of sintered nano-sized WC materials with inhibitors was lower than that of sintered nano-sized WC materials without inhibitors. No difference in hardness due to change of inhibitors was found.

• Journal of Industrial Technology
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• v.25 no.B
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• pp.127-133
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• 2005

Manufacturing methods of Nano particles can be distinguished by top-down technology as physical method and bottom-up technology as chemical synthetic method. Top-down technology is a kind of method for making microstructure as like carving after forming a macroscopic structure in advance and its typical methods are ball milling, gas condensation method and so on. Nano Particles synthesized by bottom-up method have got to do dispersing process for using them as actual nano particles because their viscosity are very strong and so easy to shape cohesive substances. Therefore, this study is about a particle separating device which separates a certain constant size of grains processed already in mill and mixer because we mostly use media agitating mill as a device of milling and dispersing and we necessarily use very slight balls as media for manufacturing nano particles in the machine. The centrifugal device has been designed for passing and separating below a certain type of grain size after final process of particles in the mill.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.257-261
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• 2006

Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.36-37
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• 2006

This study aims to investigate the usage of nano-scale particles in a micro metal injection molding ($\mu$-MIM) process. Nanoscale particle is effective to improve transcription and surface roughness in small structure. Moreover, the effects of hybrid micro/nano particles, Cu/Cu and SUS/Cu were investigated. Small dumbbell specimens were produced using various feedstocks prepared by changing binder content and fraction of nano-scale Cu particle (0.3 and $0.13{\mu}m$ in particle size). The effects of adding the fraction of nano-scale Cu powder on the melt viscosity of the feedstock, microstructure, density and tensile strength of sintered parts were discussed.

• Journal of the Korean Chemical Society
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• v.56 no.1
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• pp.159-163
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• 2012

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.162-167
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• 2005

As the properties of porous materials during the drying process relate to the atomistic defects of heterogeneous materials such as dislocation, grain, grain boundary, pore, etc., the knowledge of nano-scale analysis is needed in order to accurately analyze the drying process for porous materials. In this study, the atomic behavior of porous materials Is statically predicted by using the molecular dynamics simulation and the nano-scale material properties are computed. The elastic modulus, thermal expansion coefficient, and volumetric heat capacity numerically found from the molecular dynamics simulation are compared with those of experiment and theory and proved the accuracy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1001-1006
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• 2005

A new fabrication method is proposed to form the stacked polysilicon gate by nitridation in $N_2$ atmosphere using conventional LP-CVD system. Two step stacked layers with an amorphous layer on top of a polycrystalline layer as well as three step stacked layers with polycrystalline films were fabricated using the proposed method. SIMS profile showed that the proposed method would successfully create the nitrogen-rich layers between the stacked polysilicon layers, thus resulting in effective retardation of dopant diffusion. It was observed that the dopants in stacked films were piled-up at the interface. TEM image also showed clear distinction of stacked layers, their plane grain size and grain mismatch at interface layers. Therefore, the number of stacked polysilicon layers with different crystalline structures, interface position and crystal phase can be easily controlled to improve the device performance and reliability without any negative effects in nano-scale CMOSFETs.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.293-296
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• 2014

Fe-Ni has been of great interest because it is known as one of low thermal expansion alloys as various application areas. This alloy was fabricated by electroforming process, and effect of heat treatment on thermal expansion and hardness was investigated. Nano-crystalline structure of 13.3 - 63.5 nm in size was observed in the as-deposited alloy. To investigate the effect of heat treatment on grain growth and mechanical/thermal properties, we conducted hardness and coefficient of thermal expansion (CTE). From this, we confirmed these properties were varied by heat treatment. In this nano-crystalline alloy, we could observe abnormal behavior in thermal expansion between $350-400^{\circ}C$. Additionally, an abrupt change in hardness has also been observed. However, once the grains grow up to micro-sized the mechanical and thermal properties mentioned above were stabilized similar to those of bulk alloys due to heat treatment.