• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.61-64
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• 2010

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with $0.1-0.2\;{\mu}m$ and $1-10\;{\mu}m$, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about $10^{17}\;cm^3$ were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.327-327
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• 2007

$LiTaO_3$ single crystal has been studied for surface acoustic wave(SAW) applications. There are two kinds of $LiTaO_3$ single crystals, stoichiometric $LiTaO_3$ (SLT) and congruent $LiTaO_3$ (CLT). These two crystals show quite different dielectrical properties, which might be related with defects in crystals. In this study, we observed the domain boundary of SLT and CLT with scanning nonlinear dielectric microscopy and discussed the stress distribution in $LiTaO_3$ single crystals.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.157-160
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• 2008

Improved properties of second electron emission was evaluated by assemble of 4 inch PDP panel. MgO protection layers were deposited and examined by using both pellets made of extremely pure MgO single crystals and sintered pellets using MgO nano powders. $\gamma$ coefficients higher than 0.11 were obtained from the panel by adopting dopant-controlled MgO single crystals. Especially the MgO layer deposited by sintered pellets made of nano powders showed the higher $\gamma$ coefficients at the operating voltage above 200 volts.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.687-690
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• 2009

It has been recently reported that nano-sized MgO single crystal powders emit ultraviolet by stimulation of electrons under vacuum condition. Therefore, in this study, nano-crystalline MgO powders were applied to a xenon plasma flat fluorescent lamp for LCD backlight to improve emission efficiency of the lamp by help of extra ultraviolet from nano-MgO. For comparison with nano-crystalline MgO powders, MgO nano-thin film was applied directly on phosphors inside a lamp panel through e-beam evaporation The luminance and efficiency of FFL with an addition of MgO nano-crystal powders on phosphors were improved by around 20%. Application of MgO thin film to phosphors worsened the emission characteristics of FFLs, even rather than FFL without MgO. The reason came from insufficient stimulation of phosphors by UV, crystallinity of MgO, and low secondary electron coefficient.

• 한국재료학회지
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• 제31권9호
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• pp.488-495
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• 2021

Solid state grain growth (SSCG) is a method of growing large single crystals from seed single crystals by abnormal grain growth in a small-grained matrix. During grain growth, pores are often trapped in the matrix and remain in single crystals. Aerosol deposition (AD) is a method of manufacturing films with almost full density from nano grains by causing high energy collision between substrates and ceramic powders. AD and SSCG are used to grow single crystals with few pores. BaTiO₃ films are coated on (100) SrTiO₃ seeds by AD. To generate grain growth, BaTiO₃ films are heated to 1,300 ℃ and held for 10 h, and entire films are grown as single crystals. The condition of grain growth driving force is ∆G_max < ∆G_c ≤ ∆G_seed. On the other hand, the condition of grain growth driving force in BaTiO₃ AD films heat-treated at 1,100 and 1,200 ℃ is ∆G_c < ∆G_max, and single crystals are not grown.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.21.1-21.1
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• 2006

• 한국건설순환자원학회논문집
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• 제11권2호
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• pp.153-160
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• 2023

본 연구에서는 액상반응법을 이용하여 나노 크기의 C-S-H 결정을 합성하고 그 특성을 조사하였다. 합성한 C-S-H 결정을 현탁액 형태로 시멘트 복합체에 첨가하여 시멘트의 수화특성에 미치는 영향을 확인하였다. 최적 응집 형태의 나노 크기 C-S-H 결정을 도출하기 위해 화학혼화제의 양을 변수로 제조하였으며, SEM 사진 분석을 하였다. 합성된 C-S-H 결정외 유해물질을 제거하기 위해 세척 과정을 추가하였다. 세척과정을 거친 C-S-H 결정의 경우 유해물질의 농도가 낮아짐을 확인하였다. 합성된 C-S-H 현탁액은 세척 과정 유무에 따라 제조하였으며, 시멘트 중량대비 함유량을 주요 변수로 하여 시멘트 복합체를 제조하였다. 미소수화열 분석을 통해 C-S-H 결정이 시멘트의 초기 수화특성에 미치는 영향을 확인하였다. 또한, 모르타르 시험체를 제작하여 시간에 따른 압축강도를 측정하였다. 실험결과 나노 크기의 C-S-H 결정이 시멘트 페이스트 내에서 핵 생성처 역할을 하여 시멘트의 초기 수화를 촉진시키며, 초기 압축강도 또한 증가하는 것을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.255-255
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• 2003

• 한국정밀공학회지
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• 제22권12호
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• pp.16-21
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• 2005

Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for the manipulation of light. The existence of a photonic bandgap, a frequency range in which the propagation of light is prevented in all directions, makes photonic crystal very useful in application where the spatial localization of light is required, for example waveguide, beam splitter, and cavity. However, the fabrication of 3 dimensional photonic crystals is still difficult process. A concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air and perforated with two dimensional lattice of hole. The fabrication of Si master with pillar structure using hot embossing process is investigated for two dimensional, low-index-contrast photonic crystal waveguide. From our research we show that the multiple stamp copy process proved to be feasible and useful.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.77-78
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• 2006

We fabricated photonic crystals on GaAs and GaN substrates. After anodizing the aluminium thin film in electrochemical embient, the porous alumina was implemented to the mask for reactive ion beam etching process of GaAs wafer. And photonic crystals in GaN wafer were also fabricated using electron beam nano-lithography process. The coated PMMA thin film with 200 nm-thickness on GaN surface was patterned with triangular lattice and etched out the GaN surface by the inductively coupled plasma source. The fabricated GaAs and GaN photonic crystals provide the enhanced intensities of light emission for the wavelengths of 858 and 450 nm, respectively. We will present the detailed dimensions of photonic crystals from SEM and AFM measurements.