• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.113-114
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• 2007

Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 춘계종합학술대회
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• pp.317-320
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• 2001

본 논문에서는 Si-기반 나노채널 nMOSFET의 문턱전압에 관하여 분석하였다. 본 논문에서 연구된 소자는 180nm의 n-채널 MOSFET을 기준으로 30 nm까지의 게이트 길이를 가진 소사를 정전압 스켈링 이론에 따라 스켈링하였다. 이들 소자들은 드레인 영역에서의 전계크기 감소와 단채널 효과를 줄이기 위해 LDD(lightly doped drain) 구조를 사용하였으며 이들 소자의 문턱전압을 조사ㆍ분석하였다. 이러한 해석은 IC응용의 한계에 대한 분석을 제공할 것이며 VLSI의 기본 데이터로 활용될 수 있을 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.431-431
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• 2011

Graphene, two dimensional sheet of sp2-hybridized carbon, has attracted an enormous amount of interest due to excellent electrical, chemical and mechanical properties for the application of transparent conducting films, clean energy devices, field-effect transistors, optoelectronic devices and chemical sensors. Especially, graphene is promising candidate to detect the gas molecules and biomolecules due to the large specific surface area and signal-to-noise ratios. Despite of importance to the disease diagnosis, there are a few reports to demonstrate the graphene- and rGO-FET for biological sensors and the sensing mechanism are not fully understood. Here we describe scalable and facile fabrication of rGO-FET with the capability of label-free, ultrasensitive electrical detection of a cancer biomarker, prostate specific antigen/${\alpha}1$-antichymotrypsin (PSA-ACT) complex, in which the ultrathin rGO sensing channel was simply formed by a uniform self-assembly of two-dimensional rGO nanosheets on aminated pattern generated by inkjet printing. Sensing characteristics of rGO-FET immunosensor showed the highly precise, reliable, and linear shift in the Dirac point with the analyte concentration of PSA-ACT complex and extremely low detection limit as low as 1 fg/ml. We further analyzed the charge doping mechanism, which is the change in the charge carrier in the rGO channel varying by the concentration of biomolecules. Amenability of solution-based scalable fabrication and extremely high performance may enable rGO-FET device as a versatile multiplexed diagnostic biosensor for disease biomarkers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.243-246
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• 2008

Roll-printed organic thin-film transistors (OTFTs) were fabricated by gravure or flexography printing using patterned PDMS stamp with various channel lengths, silver pastes, coated polyvinylphenol dielectric, and jetted bis(triisopropyl-silylethynyl) pentacene semiconductor on plastic substrates. The roll-printed OTFT parameters were obtained: fieldeffect mobility of $0.1\;cm^2/Vs$, an on/off current ratio of $10^4$ and a subthreshold slope of 2.53 V/decade.

• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.89-101
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• 2014

나노 규모의 좁은 공간에서는 분자들과 벽면과의 상호작용이 커서 분자들의 거동에 큰 영향을 준다. 이와 관련하여 최근에 나노슬릿 (nano-slit)이나 나노채널(nano-channel)과 같은 제한된 공간(confined geometry)에서 DNA의 구조적, 동역학적 거동에 관한 연구가 활발히 진행 중이다. 이러한 연구에서 모티브를 얻어 많은 입자들(spheres)로 이루어진 나노슬릿(nano-slit)사이에 Leonard-Jones potential을 따르는 용매분자들과 고분자가 들어있는 시스템을 구성하여 고분자의 동역학에 관해 연구하고자 하였다. 이때 슬릿(slit)은 약간의 탄성 포텐셜을 가지는 경우와 완전히 고정되어서 움직이지 않는 경우로 나누어 실행하였다. 더불어 고분자의크기, 용매의 종류, slit 사이의 간격 등의 변화가 고분자의 동역학에 어떤 영향을 주는지 살펴보았다. 이를 통해 환경적 조건에 따른 나노슬릿(nano-slit)에서 고분자의 움직임의 양상을 이해할 수 있었다.

• 한국멀티미디어학회논문지
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• 제19권9호
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• pp.1690-1697
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• 2016

In a beacon-enabled Zigbee network, the slotted CSMA/CA mechanism based on the super frame structure fairly provides communication chance for each node and makes a reasonable usage of the available energy. In the case of wireless nano sensors that are implanted into the target human body area for detecting disease symptoms or virus, such a nano-network requires a similar type of channel sharing and transmission of short length event-driven data. In this paper, for nano-network's in-body applications, we aim to design conceptually a new super frame derived from the existing beacon-enabled Zigbee MAC protocol. And we analyze the efficiency of the proposed super frame in the aspect of practical deployment.

• Journal of information and communication convergence engineering
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• 제9권6호
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• pp.738-742
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• 2011

This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSFET) using analytical potential model. Two dimensional analytical potential model has been presented for symmetrical DGMOSFETs with process parameters. DIBL is very important short channel effects(SCEs) for nano structures since drain voltage has influenced on source potential distribution due to reduction of channel length. DIBL has to be small with decrease of channel length, but it increases with decrease of channel length due to SCEs. This potential model is used to obtain the change of DIBL for DGMOSFET correlated to channel doping profiles. Also device parameters including channel length, channel thickness, gate oxide thickness and doping intensity have been used to analyze DIBL.

• Journal of information and communication convergence engineering
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• 제9권3호
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• pp.310-314
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• 2011

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.51-56
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• 2013

Even if transmissions through normal channel between ubiquitous devices and terminal readers are encrypted, any extra sources of information retrieved from encrypting module can be exploited to figure out the key parameters, so called side channel attack. Since side channel attacks are based on statistical methods, making side channel signal weak or complex is the proper solution to prevent the attack. Among many countermeasures, shielding the electromagnetic signal and adding noise to the EM signal were examined by applying different thicknesses of thin films of ferroelectric (BTO) and conductors (copper and gold). As a test vehicle, chip antenna was utilized to see the change in radiation characteristics: return loss and gain. As a result, the ferroelectric BTO showed no recognizable effect on both shielding and adding noise. Cu thin film showed increasing shielding effect with thickness. Nanometer Au exhibited possibility in adding noise by widening of bandwidth and red shifting of resonating frequencies.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.52-55
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• 2004

In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current salutation. When electron velocity is saturated, deletion layer is stil open channel and it play a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.