• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2006.05a
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• pp.922-929
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• 2006

In this study, flow characteristics of the FPN (Fountain Pen Nano-Lithography) using active membrane pumping are investigated. This FPN has integrated chamber, micro channel, and high capacity reservoir for continuous ink feed. The most important aspect in this probe provided control of fluid injection using active membrane pumping in chamber. The flow rates in channel by capillary force are theoretically analyzed, including the control of mass flow rates by deflection of membrane. The above results are compared with numerical simulations that calculated by commercial code, FLUENT. The velocity of fluid in micro channel shows linear behaviors. And the mass flows are proportional to the second order function of pumping pressure that is imposed to membrane.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.896-898
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• 2009

The printed electrodes of organic thin-film transistors (OTFTs) were fabricated by screen printing using nanoparticle silver pastes. The screen printed OTFT corresponds to channel lengths between 7.6 to 82.6 ${\mu}m$ (designed L=10 to 80 ${\mu}m$) on the $150{\times}150mm^2$ paper. The channel length deviations for 40 to 80 ${\mu}m$ patterns were less than 5 %. However, the channel lengths for 10 to 30 ${\mu}m$ patterns were increased by 20 %. The screen printed bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) OTFTs obtained had a field-effect mobility as large as 0.08 (${\pm}0.02$) $cm^2$/Vs, an on/off current ratio of $10^5$ and a subthreshold slope of 1.95 V/decade.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.270-274
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• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.615-616
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• 2013

• Journal of Powder Materials
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• v.14 no.1 s.60
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• pp.26-31
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• 2007

Manufacturing bulk nanostructured materials with least grain growth from initial powders is challenging because of the bottle neck of bottom-up methods using the conventional powder metallurgy of compaction and sintering. In this study, bottom-up type powder metallurgy processing and top-down type SPD (Severe Plastic Deformation) approaches were combined in order to achieve both real density and grain refinement of metallic powders. ECAP (Equal Channel Angular Pressing), one of the most promising processes in SPD, was used for the powder consolidation method. For understanding the ECAP process, investigating the powder density as well as internal stress, strain distribution is crucial. We investigated the consolidation and plastic deformation of the metallic powders during ECAP using the finite element simulations. Almost independent behavior of powder densification in the entry channel and shear deformation in the main deformation zone was found by the finite element method. Effects of processing parameters on densification and density distributions were investigated.

• ETRI Journal
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• v.39 no.2
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• pp.284-291
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• 2017

Drain-induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short-channel effect for nano metal-oxide semiconductor field-effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two-dimensional approximations based on the energy-conservation equation for channel electrons in FETs, which is different from the former field-penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration-dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.

• Design & Manufacturing
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• v.16 no.3
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• pp.58-65
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• 2022

Micro-fluidic chip has been fabricated by lithography process on silicon or glass wafer, casting using PDMS, injection molding of thermoplastics or 3D printing, etc. Among these processes, 3D printing can fabricate micro-fluidic chip directly from the design without master or template for fluidic channel fabricated previously. Due to this direct printing, 3D printing provides very fast and economical method for prototyping micro-fluidic chip comparing to conventional fabrication process such as lithography, PDMS casting or injection molding. Although 3D printing is now used more extensively due to this fast and cheap process done automatically by single printing machine, there are some issues on accuracy or surface characteristics, etc. The accuracy of the shape and size of the micro-channel is limited by the resolution of the printing and printing direction or layering direction in case of SLM type of 3D printing using UV curable resin. In this study, the printing direction and thickness of each printing layer are investigated to see the effect on the size, shape and surface of the micro-channel. A set of micro-channels with different size was designed and arrayed orthogonal. Micro-fluidic chips are 3D printed in different directions to the micro-channel, orthogonal, parallel, or skewed. The shape of the cross-section of the micro-channel and the surface of the micro-channel are photographed using optical microscopy. From a series of experiments, an optimal printing direction and process conditions are investigated for 3D printing of micro-fluidic chip.

• Journal of Powder Materials
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• v.13 no.6 s.59
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• pp.415-420
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• 2006

Nanostructured metallic materials are synthesized by bottom-up processing which starts with powders for assembling bulk materials or top-down processing starting with a bulk solid. A representative bottom-up and top-down paths for bulk nanostructured/ultrafine grained metallic materials are powder consolidation and severe plastic deformation (SPD) methods, respectively. In this study, the bottom-up powder and top-down SPD approaches were combined in order to achieve both full density and grain refinement without grain growth, which were considered as a bottle neck of the bottom-up method using conventional powder metallurgy of compaction and sintering. For the powder consolidation, equal channel angular pressing (ECAP), one of the most promising method in SPD, was used. The ECAP processing associated with stress developments was investigated. ECAP for powder consolidation were numerically analyzed using the finite element method (FEM) in conjunction with pressure and shear stress.

• Journal of the Korean institute of surface engineering
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• v.49 no.2
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• pp.152-158
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• 2016

We investigated the effect of capacitively coupled Ar plasma treatment on contact resistance ($R_c$) and channel sheet resistance ($R_{sh}$) of graphene field effect transistors (FETs), by varying their channel length in the wide range from 200 nm to $50{\mu}m$ which formed the transfer length method (TLM) patterns. When the Ar plasma treatment was performed on the long channel ($10{\sim}50{\mu}m$) graphene FETs for 20 s, $R_c$ decreased from 2.4 to $1.15k{\Omega}{\cdot}{\mu}m$. It is understood that this improvement in $R_c$ is attributed to the formation of $sp^3$ bonds and dangling bonds by the plasma. However, when the channel length of the FETs decreased down to 200 nm, the drain current ($I_d$) decreased upon the plasma treatment because of the significant increase of channel $R_{sh}$ which was attributed to the atomic structural disorder induced by the plasma across the transfer length at the edge of the channel region. This study suggests a practical guideline to reduce $R_c$ using various plasma treatments for the $R_c$ sensitive graphene and other 2D material devices, where $R_c$ is traded off with $R_{sh}$.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.34-35
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• 2004