• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.6
• /
• pp.13-21
• /
• 2010

A energy efficient $V_{pp}$ generator using a variable pumping frequency for mobile DRAM is presented in this paper. The proposed $V_{pp}$ generator exploits 3 stages of a cross-coupled charge pump for energy efficiency. Instead of using a fixed pumping frequency in the conventional $V_{pp}$ generator, our proposed $V_{pp}$ generator adopts a voltage-controlled oscillator and uses variable frequencies to reduce the ramp-up time. As a result, our $V_{pp}$ generator generates 3.0 V output voltage with 24.0-${\mu}s$ ramp-up time at 2 mA current load and 1 nF capacitor load with 1.2 V supply voltage. Experimental results show that the proposed $V_{pp}$ generator consumes around 26% less energy (1573 nJ $\rightarrow$ 1162 nJ) and reduces 29% less ramp-up time (33.7-${\mu}s$ $\rightarrow$ 24.0-${\mu}s$) compared to the conventional approach.

• Korean Journal of Optics and Photonics
• /
• v.20 no.3
• /
• pp.175-181
• /
• 2009

Holographic lithography is one of the potential technologies for next generation lithography which can print large areas (6") as well as very fine patterns ($0.35{\mu}m$). Usually, photolithography has been developed with two target purposes. One was for LCD applications which require large areas (over 6") and micro pattern (over $1.5{\mu}m$) exposure. The other was for semiconductor applications which require small areas (1.5") and nano pattern (under $0.2{\mu}m$) exposure. However, holographic lithography can print fine patterns from $0.35{\mu}m$ to $1.5{\mu}m$ keeping the exposure area inside 6". This is one of the great advantages in order to realize high speed fine pattern photolithography. How? It is because holographic lithography is taking holographic optics instead of projection optics. A hologram mask is the key component of holographic optics, which can perform the same function as projection optics. In this paper, Surface-Relief TIR Hologram Mask technology is introduced, and enables more robust hologram masks than those previously reported that were formed in photopolymer recording materials. We describe the important parameters in the fabrication process and their optimization, and we evaluate the patterns printed from the surface-relief TIR hologram masks.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.1 s.343
• /
• pp.7-12
• /
• 2006

In this study, we developed irreversible and stable micro-size ferromagnetic structures utilizing hydrogenation and electron-beam lithography processes. The compositionally modulated (CM) Fe-Zr thin films that had average compositions $Fe_XZr_{100-x}$ with $x=65-85\%$ modulation periods of similar to 1 nm, and total thicknesses of similar to 100 m were prepared. The magnetic properties of CM Fe-Zr thin films were measured using a SQUID magnetometer, VSM and B-H loop tracer. After hydrogenation, the CM films exhibited larger magnetic moment increases than similar homogeneous alloy films for all compositions and かey showed largest increase in $Fe_{80}Zr_{20}$ composition. After aging in air at $300^{\circ}K$ the hydrogenated $Fe_{80}Zr_{20}$ CM films showed much larger magnetic moment increases, indicating that they relax to a stable, irreversible, soft magnetic state. The selective hydrogenation through electron-beam lithographed windows were performed after the circle shaped windows were prepared on $Fe_{80}Zr_{20}$ CM films by electron beam lithography. The hydrogenation through electron-beam resist and W lithographic techniques give a $49\%$ magnetic moment increase. This method can be applied to nano scale structures.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.1
• /
• pp.18-21
• /
• 2017

In this study, spherical monodispersed cerium-doped yttrium aluminum garnet (YAG : $Ce^{3+}$) phosphor particles were synthesized via homogeneous precipitation method using the mixed solution of yttrium nitrate, cerium nitrate, aluminum nitrate, ammonium aluminum sulfate, and urea as a precipitant. During the process of precursors of monodispersed YAG : $Ce^{3+}$, aluminum ions which form spherical aluminum compounds precipitated first and yttrium compounds precipitated onto the surface of the existing spherical aluminum compounds. Drying process using lyophilization could obtain monodispered spherical YAG : $Ce^{3+}$ particles compare to using oven. The thermal calcination process of YAG : $Ce^{3+}$ precursors under the temperature of $1200^{\circ}C$ for 6 h was enough to obtain 400~500 nm sized YAG particles with pure YAG phase.

• Korean Chemical Engineering Research
• /
• v.50 no.1
• /
• pp.50-54
• /
• 2012

In this study, PANI and PANI/$TiO_2$ composites were prepared as electrode materials for a supercapacitor application. Cyclic voltammetry (CV) was performed to investigate the supercapacity properties of these electrodes in an electrolyte solution of 6 M KOH. The PANI/$TiO_2$ composites were polymerized by amount of various ratios through a simple in-situ method. The morphological properties of composites were analyzed by SEM and TEM method. The crystallinity of the composite and $TiO_2$ particle size were identified using X-ray diffraction (XRD). In the electrochemical test, The electrode containing 10 wt% $TiO_2$ content against aniline units showed the highest specific capacitance (626 $Fg^{-1}$) and delivered a capacitance of 286 $Fg^{-1}$ reversibly at a 100 $mVs^{-1}$ rate. According to the surface morphology, the increased capacitance was related to the fact that nano-sized $TiO_2$ particles (~6.5 nm) were uniformly connected for easy charge transfer and an enhanced surface area for capacitance reaction of $TiO_2$ itself.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.3
• /
• pp.23-29
• /
• 2013

Development of flexible electronic devices has primarily focused on printing technology using organic materials. However, organic-based flexible electronics have several disadvantages, including low electrical performance and long-term reliability. Therefore, we fabricated nano- and micro-thick silicon film attached to the polymer substrate using transfer printing technology to investigate the feasibility of silicon-based flexible electronic devices with high performance and high flexibility. Flexibility of the fabricated samples was investigated using bending and stretching tests. The failure bending radius of the 200 nm-thick silicon film attached on a PI substrate was 4.5 mm, and the failure stretching strain was 1.8%. The failure bending radius of the micro-thick silicon film attached on a FPCB was 2 mm, and the failure strain was 3.5%, which showed superior flexibility compared with conventional silicon material. Improved flexibility was attributed to a buffering effect of the adhesive between the silicon film and the substrate. The superior flexibility of the thin silicon film demonstrates the possibility for flexible electronic devices with high performance.

• The Journal of The Korea Institute of Intelligent Transport Systems
• /
• v.18 no.1
• /
• pp.74-82
• /
• 2019

The revolution of industry 4.0 is enabling us to build an intelligent connection society called smart cities. The use of renewable energy in particular solar energy is extremely important for modern society due to the growing power demand in smart cities, but its difficult to monitor and manage in each buildings since need to be deploy low energy sensors and information need to be transfer via wireless sensor network (WSN). The Internet of Things (IoT) / low-power wide-area (LPWA) is an emerging WSN technology, to collect and monitor data about environmental and physical electrical / electronics devices conditions in real time. However, providing power to IoT sensor end devices and other public electrical loads such as street lights, etc is an important challenging role because the sensor are usually battery powered and have a limited life time. In this paper, we proposes an efficient solar energy-based power management scheme for smart city based on IoT technology using LoRa wide-area network (LoRaWAN). This approach facilitates to maintain and prevent errors of solar panel based energy systems. The proposed solution maximizing output the power generated from solar panels system to distribute the power to the load and the grid. In this paper, we proved the efficiency of the proposed system with Simulink based system modeling and real-time emulation.

• Journal of the Korean Vacuum Society
• /
• v.17 no.4
• /
• pp.359-364
• /
• 2008

We have investigated optical and structural properties of $Al_{0.3}Ga_{0.7}N$/GaN and $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ heterostructures (HSs) grown by metal-organic chemical vapor deposition, by means of Hall measurement, high-resolution X-ray diffraction, and temperature- and excitation power-dependent photoluminescence (PL) spectroscopy. A strong GaN band edge emission and its longitudinal optical phonon replicas were observed for all the samples. At 10 K, a 2DEG-related PL peak located at ${\sim}\;3.445\;eV$ was observed for $Al_{0.3}Ga_{0.7}N$/GaN HS, while two 2DEG peaks at ${\sim}\;3.42$ and ${\sim}\;3.445\;eV$ were observed for $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS due to the additional $Al_{0.15}Ga_{0.85}N$ layers. Moreover, the emission intensity of the 2DEG peak was higher in $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS than in $Al_{0.3}Ga_{0.7}N$/GaN HS probably due to an effective confinement of the photo-excited holes by the additional $Al_{0.15}Ga_{0.85}N$ layers. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. To investigate the origin of the new 2DEG peaks, the energy-band structure for multiple AlGaN/GaN HSs were simulated and compared with the experimental data. As a result, the observed high- and low-energy peaks of 2DEG can be attributed to the spatially-separated 2DEG emissions formed at different AlGaN/GaN heterointerfaces.

• Journal of IKEEE
• /
• v.12 no.3
• /
• pp.131-137
• /
• 2008

A silicon Fabry-Perot tunable thermo-optic filter for WDM using the thin film silicon coating is proposed and experimented. The filter is implemented by using the CMP process and polishing both sides of the commercial silicon wafer with normal thickness of 100${\mu}m{\pm}$1%. The filter also has 2-layer or 3-layer dielectrics thin film coating mirror which are alternated ${\lambda}$/4 layers of $SiO_2$($n_{low}$=1.44) and a-Si($n_{high}$=3.48) for the central wavelength of 1550nm by RF sputtering. The experiment shows that FSR is 3.61nm and FWHM is 0.56nm and the finesse is 6.4 for 2-layer mirror with the reflection of 61%, and that FSR is 3.36nm and FWHM is 0.13nm and the finesse is 25.5 for 3-layer mirror with the reflection of 89%. According to thermo-optic effect, the transmitted central wavelength of 1549.73nm at $23^{\circ}C$ is shifted to 1550.91nm at $30^{\circ}C$ and 1553.46nm at $60^{\circ}C$ for 2-layer mirror, and the transmitted central wavelength of 1549.83nm at $23^{\circ}C$ is shifted to 1550.92nm at $30^{\circ}C$ and 1553.07nm at $60^{\circ}C$ for 3-layer mirror.

• Journal of IKEEE
• /
• v.16 no.3
• /
• pp.217-223
• /
• 2012

This paper presents design and operational characteristics of 150 MW pulse power system for high current pulse forming network to control trigger time. The system is composed of two capacitor bank modules. Each capacitor bank module consist of a trigger vacuum switch, 9k 33kJ capacitor, an energy dump circuit, a crowbar circuit and a pulse shaping inductor and is connected in parallel. It is controlled by trigger controller to select operational module and determine triggering time. Pspice simulation was conducted about determining parameters of components such as crowbar circuit, capacitor, pulse forming inductor, trigger vacuum switch and predicting results of experiment circuit. The result of the experiment was in good agreement with the result of the simulation. The various current shapes with 300~650 us pulse width is formed by sequential firing time control of capacitor bank module. The maximum current is about 40 kA during simultaneous triggering of two capacitor bank modules. The developed 150 MW pulse power system can be applied to high current pulse power system such as rock fragmentation power sources, Rail gun, Coil gun, nano-powers, high power microwave.