• 마이크로전자및패키징학회지
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• 제25권2호
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• pp.1-8
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• 2018

In the soldering industry, a variety of lead-free solders have been developed as a part of restricting lead in electronic packaging. Sn-Ag-Cu (SAC) lead-free solder is regarded as one of the most superior candidates, owing to its low melting point and high solderability as well as the mechanical property. On the other hand, the mechanical property of SAC solder is directly influenced by intermetallic compounds (IMCs) in the solder joint. Although IMCs in SAC solder play an important role in bonding solder joints and impart strength to the surrounding solder matrix, a large amount of IMCs may cause poor strength, due to their brittle nature. In other words, the mechanical properties of SAC solder are of some concern because of the formation of large and brittle IMCs. As the IMCs grow, they may cause poor device performance, resulting in the failure of the electronic device. Therefore, new solder technologies which can control the IMC growth are necessary to address these issues satisfactorily. There are an advanced nanotechnology for microstructural refinement that lead to improve mechanical properties of solder alloys with nanoparticle additions, which are defined as nano-reinforced solders. These nano-reinforced solders increase the mechanical strength of the solder due to the dispersion hardening as well as solderability of the solder. This paper introduces the nano-reinforced solders, including its principles, types, and various properties.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.3.2-3.2
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• 2011

In recent years, inkjet printing technology has received significant attention as a micro/nanofabrication technique for flexible printing of electronic circuits and solar cells, as well for biomaterial patterning. It eliminates the need for physical masks, causes fewer environment problems, lowers fabrication costs, and offers good layer-to-layer registration. To fulfill the requirements for use in the above applications, however, the inkjet system must meet certain criteria such as high frequency jetting, uniform droplet size, high density nozzle array, etc. Existing inkjet devices are either based on thermal bubbles or piezoelectric pumping; they have several drawbacks for flexible printing. For instance, thermal bubble jetting has limitations in terms of size and density of the nozzle array as well as the ejection frequency. Piezoelectric based devices suffer from poor pumping energy in addition to inadequate ejection frequency. Recently, an electrohydrodynamic (EHD) printing technique has been suggested and proposed as an alternative to thermal bubble or piezoelectric devices. In EHD jetting, a liquid (ink) is pumped through a nozzle and a strong electric field is applied between the nozzle and an extractor plate, which induce charges at the surfaces of the liquid meniscus. This electric field creates an electric stress that stretches the meniscus in the direction of the electric field. Once the electric field force is larger than the surface tension force, a liquid droplet is formed. An EHD inkjet head can produce droplets smaller than the size of the nozzle that produce them. Furthermore, the EHD nano-inkjet can eject high viscosity liquid through the nozzle forming tiny structures. These unique features distinguish EHD printing from conventional methods for sub-micron resolution printing. In this presentation, I will introduce the recent research results regarding the EHD nano-inkjet and the printing system, which has been applied to solar cell or thin film transistor applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.359-359
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• 2011

This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

• 한국산학기술학회논문지
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• 제11권3호
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• pp.1027-1034
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• 2010

상온경화 주형용으로 사용되는 상업적 폴리우레탄 수지에 평균 입자크기가 ${\mu}m$ 및 nm 크기의 서로 다른 무기물 파우더를 충전하여 만든 폴리우레탄 복합수지의 중합반응 및 분해반응 특성을 살펴보고 기계적물성의 변화를 연구하였다. 중합반응의 경우, 평균입자크기가 약 $0.5{\mu}m$로서 상대적으로 입경이 큰 Ce500 무기분말을 사용한 충전하는 경우에는 충전량이 많아질수록 최고 반응 속도점의 반응온도는 상대적으로 낮아지는 것으로 나타나는 반면, 나노두께크기의 MMT 충전제를 사용하는 경우에는 충전 함량에는 큰 차이가 없이 최고반응온도가 높아지면서 반응속도도 빨라지는 거동을 보였다. 또한 TGA 열중량 시험결과에 대하여 Kissinger method를 이용하여 분석한 결과로서 Ce500-복합체의 경우에는 분해반응의 활성화 에너지가 139.34 kJ/mol이었고 MMT-복합체의 경우에는 91.12 kJ/mol로 나타났으며 이로부터 MMT 분말의 분해촉매 효과를 확인할 수 있었다. 한편, 인장강도는 5phr 정도의 소량 충전함량에서는 별 변화를 보이지 않으나 그 이상의 함량에서는 MMT가 충전된 샘플의 강도 증가 현상이 뚜렷이 나타났다.

• 대한전자공학회논문지SD
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• 제41권7호
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• pp.21-29
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• 2004

본 논문에서는 Dual oxide를 갖는 Nano-scale CMOSFET에서 각 소자의 Hot carrier 특성을 분석하여 두 가지 중요한 결과를 나타내었다. 하나는 NMOSFET Thin/Thick인 경우 CHC stress 보다는 DAHC stress에 의한 소자 열화가 지배적이고, Hot electron이 중요하게 영향을 미치고 있는 반면에, PMOSFET에서는 특히 Hot hole에 의한 영향이 주로 나타나고 있다는 것이다. 다른 하나는, Thick MOSFET인 경우 여전히 NMOSFET의 수명이 PMOSFET의 수명에 비해 작지만, Thin MOSFET에서는 오히려 PMOSFET의 수명이 NMOSFET보다 작다는 것이다. 이러한 분석결과는 Charge pumping current 측정을 통해 간접적으로 확인하였다. 따라서 Nano-scale CMOSFET에서의 NMOSFET보다는 PMOSFET에 대한 Hot camel lifetime 감소에 관심을 기울여야 하며, Hot hole에 대한 연구가 진행되어야 한다고 할 수 있다.

• 한국레이저가공학회지
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• 제15권3호
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• pp.16-19
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• 2012

We have successfully formed brown colored patterns inside of a transparent borosilicate glass generally known as BK7, laying the focus of near infrared Ti: sapphire femtosecond laser beam in the bulk BK7 glass. It is important to keep the laser power well below the damage threshold of BK7 in forming the color center. According to the low laser power, there was no laser induced mechanical damage such as cracks or threads in the color formed area. From the absorbance spectrum and its gaussian fitting, we found the band gap of BK7, 4.21eV, and three absorption edges.

• Bulletin of the Korean Chemical Society
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• 제29권4호
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• pp.817-821
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• 2008

We have investigated the influence of the crystal structure on the chemical bonding nature and photocatalytic activity of cubic and hexagonal perovskite A[$Cr_{1/2}Ta_{1/2}$]O3 (A = Sr, Ba) compounds. According to neutron diffraction and field emission-scanning electron microscopy, the crystal structure and particle size of these compounds are strongly dependent on the nature of A-site cations. Also, it was found that the face-shared octahedra in the hexagonal phase are exclusively occupied by chromium ions, suggesting the presence of metallic (Cr-Cr) bonds. X-ray absorption and diffuse UV-vis spectroscopic analyses clearly demonstrated that, in comparison with cubic Sr[$Cr_{1/2}Ta_{1/2}$]$O_3$ phase, hexagonal Ba[$Cr_{1/2}Ta_{1/2}$]$O_3$ phase shows a decrease of Cr oxidation state as well as remarkable changes in interband Cr d-d transitions, which can be interpreted as a result of metallic (Cr-Cr) interactions. According to the test of photocatalytic activity, the present semiconducting materials have a distinct activity against the photodegradation of 4-chlorophenol. Also the Srbased compound was found to show a higher photocatalytic activity than the Ba-based one, which is attributable to its smaller particle size and its stronger absorption in visible light region.

• BMB Reports
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• 제46권5호
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• pp.276-281
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• 2013

In this study, we aimed to compare the morphogenetic and neuronal characteristics between monolayer cells and spheroids. For this purpose, we established spheroid formation by growing SH-SY5Y cells on the hydrophobic surfaces of thermally-collapsed elastin-like polypeptide. After 4 days of culture, the relative proliferation of the cells within spheroids was approximately 92% of the values for monolayer cultures. As measured by quantitative assays for mRNA and protein expressions, the production of synaptophysin and neuronspecific enolase (NSE) as well as the contents of cell adhesion molecules (CAMs) and extracellular matrix (ECM) proteins are much higher in spheroids than in monolayer cells. Under the all-trans-retinoic acid (RA)-induced differentiation condition, spheroids extended neurites and further up-regulated the expression of synaptophysin, NSE, CAMs, and ECM proteins. Our data indicate that RA-differentiated SH-SY5Y neurospheroids are functionally matured neuronal architectures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• 한국분말재료학회지
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• 제13권3호
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• pp.187-191
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• 2006

Al-Cu alloy nano powders were produced by the electrical explosion of Cu-plated Al wires. The composition and phase of the alloy could be controlled by varying the thickness of Cu deposit on Al wire. When the Cu layer was thin, Al solid solution and $CuAl_2$ were the major phases. As the Cu layer becomes thicker, Al diminished while $Al_4Cu_9$ phase prevailed instead. The average particle size of Al-Cu nano powders became slightly smaller from 63 nm to 44 nm as Cu layer becomes thicker. The oxygen content of Al-Cu powder decreased linearly with Cu content. It is well demonstrated that the electrodeposition combined with wire explosion could be simple and economical means to prepare variety of alloy and intermetallic nano powders.