• 유기물자원화
• /
• 제32권3호
• /
• pp.57-66
• /
• 2024

본 연구에서는 반도체 패키징 공정에서 발생하는 실리콘 슬러지(Silicon-sludge, S-sludge)에 실리카층을 코팅(Silica coated silicon-sludge, SS-sludge)하였으며, 이를 에폭시 몰딩 컴파운드(Epoxy molding compound, EMC)의 필러로 적용하였다. 상세히는, 산세처리를 통해 S-sludge의 금속불순물을 제거하였으며, 졸-겔법을 통해 SS-sludge를 제조하였다. SS-sludge는 에폭시 고분자, 경화제 및 카본블랙과 혼합하여 EMC(Silica coated silicon-sludge EMC, SS-sludge EMC)로 제조되었다. 적외선 카메라를 통한 방열 특성 분석 결과, 제조된 SS-sludge EMC는 58.5℃의 가장 높은 표면 온도를 나타내었다. 이는 SS-sludge의 주성분인 실리콘의 높은 열전도도(150W/mK) 및 실리카 코팅에 의해 EMC의 방열 특성이 향상되었기 때문이다. 본 연구를 통해, 반도체 패키징 공정에서 발생하는 실리콘 슬러지를 고부가가치를 지닌 반도체 패키징용 EMC의 필러로 재활용할 수 있는 방안을 제시하였다.

• Korean Chemical Engineering Research
• /
• 제59권4호
• /
• pp.487-492
• /
• 2021

본 연구에서는 피치가 코팅된 실리콘 시트/흑연 음극복합소재의 전기화학적 특성을 조사하였다. NaCl을 주형으로 하여 스토버 법 및 마그네슘 열 환원법을 통해 실리콘 시트를 제조하고, 양친성 물질인 SDBS로 흑연과 결합시켜 실리콘 시트/흑연을 합성하였다. THF를 용매로 석유계 피치가 코팅된 실리콘 시트/흑연 음극복합소재를 제조하였고, 음극복합소재의 물리적 특성은 XRD, SEM, EDS와 TGA를 통해 분석하였다. 전기화학적 특성은 LiPF₆ (EC:DMC:EMC=1:1:1 vol%)의 전해액을 사용해 전지를 제조하여, 충·방전 사이클, 율속, 순환전압전류, 전기화학적 임피던스 테스트를 통해 조사하였다. 실리콘 조성이 증가함에 따라 방전 용량이 증가하였고, 장기 안정성은 감소하는 경향을 보였다. 30 wt% 실리콘 조성을 갖는 실리콘 시트/흑연 복합소재에 피치를 코팅한 음극복합소재는 1228.8 mAh/g의 높은 초기 방전 용량을 보였으며, 50사이클 이후 용량 유지율은 77%로 실리콘 시트/흑연 복합소재에 비해 안정성이 개선됨을 알 수 있었다.

• Steel and Composite Structures
• /
• 재36권6호
• /
• pp.631-642
• /
• 2020

This paper studies nonlinear stability behavior of a nanocrystalline silicon curved nanoshell considering strain gradient size-dependency. Nanocrystallines are composite materials with an interface phase and randomly distributed nano-size grains and pores. Imperfectness of the curved nanoshell has been defined based on an initial deflection. The formulation of nanocrystalline nanoshell has been established by thin shell theory and an analytical approach has been used in order to solve the buckling problem. For accurately describing the size effects related to nano-grains or nano-pores, their surface energies have been included. Nonlinear stability curves of the nanoshell are affected by the size of nano-grain, curvature radius and nano-pore volume fraction. It is found that increasing the nano-pore volume fraction results in lower buckling loads.

• 한국표면공학회지
• /
• 제41권6호
• /
• pp.331-334
• /
• 2008

The replica of highly ordered nano-sphere array patterns were fabricated using hot embossing method. First, silica nano-sphere array on Si substrate was transferred to PVC film at $130^{\circ}C$ and 7 bar using hot embossing process. Then, silica nano-sphere array on PVC template was removed by soaking the PVC film in buffered oxide etcher. In order to form anti-stiction layer, the PVC template was coated with silicon dioxide layer and self-assembled monolayer. Through UV nanoimprint lithography with the fabricated flexible PVC template, highly ordered nano-sphere array pattern was imprinted on curved substrates with high fidelity.

• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2005년도 추계학술발표대회 개요집
• /
• pp.168-170
• /
• 2005

Nickel base brazes containing boron and silicon as melting point depressants are used extensively in the joining and repair of hot-section components in next generation nuclear reactor and aero-engine. Therefore, the present study has investigated the preliminary applicability of nickel based alloying nano powders. Nano Ni-based alloying powders synthesized by Pulsed Wire Evaporation (PWE) method. It's powder morphology and phase transformation temperature were analyzed by scanning electron microscopy, transmission electron microscopy, and differential scanning calorimeter(DSC). The powder particle size was approximately 10${\sim}$100nm and exhibits a quite even equiaxed shape. The results of DSC measurement show that both the nano Inconel 625 nano powder and Inconel 718 nano powder presents similar liquidus temperatures approximately $1373^{\circ}C$ and $1380^{\circ}C$ respectively.

• KSTLE International Journal
• /
• 제6권1호
• /
• pp.13-16
• /
• 2005

Friction characteristics at nano-scale of self-assembled monolayers (SAMs) having different chain lengths and end groups were experimentally studied.51 order to understand the effect of the chain length and end group on the nano-scalefriction: (1) two different SAMs of shorter chain lengths with different end groups such as methyl and phenyl groups, and (2)four different kinds of SAMs having long chain lengths (C10) with end groups of fluorine and hydrogen were coated on siliconwafer (100) by dipping method and Chemical Vapour Deposition (CVD) technique. Their nano-scale friction was measuredusing an Atomic Force Microscopy (AFM) in the range of 0-40 nN normal loads. Measurements were conducted at the scanning speed of 2 $mu$m/s for the scan size of 1$mu$m x 1 $mu$m using a contact mode type $Si_3N_4$ tip (NPS 20) that had a nominal spring constant0.58 N/m. All experiments were conducted at anlbient temperature (24 $pm$1$circ$C) and relative humidity (45 $pm$ 5%). Results showedthat the friction force increased with applied normal load for all samples, and that the silicon wafer exhibited highest frictionwhen compared to SAMs. While friction was affected by the inherent adhesion in silicon wafer, it was influenced by the chainlength and end group in the SAMs. It was observed that the nano-friction decreased with the chain length in SAMs. In the caseof monolayers with shorter length, the one with the phenyl group exhibited higher friction owing to the presence of benBenerings that are stiffer in nature. In the case of SAMs with longer chain length, those with fluorine showed friction values relativelyhigher than those of hydrogen. The increase in friction due to the presence of fluorine group has been discussed with respect tothe siBe of the fluorine atom.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.487-487
• /
• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.

• Current Photovoltaic Research
• /
• 제6권1호
• /
• pp.1-11
• /
• 2018

Current major photovoltaic (PV) market share (> 60%) is being occupied by the multicrystalline (mc)-silicon solar cells despite of low efficiency compared to single crystalline silicon solar cells. The diamond wire sawing technology reduces the production cost of crystalline silicon solar cells, it increases the optical loss for the existing mc-silicon solar cells and hence its efficiency is low in the current mass production line. To overcome the optical loss in the mc-crystalline silicon, caused by the diamond wire sawing, next generation texturing process is being investigated by various research groups for the PV industry. In this review, the limitation of surface structure and optical loss due to the reflectivity of conventional mc-silicon solar cells are explained by the typical texturing mechanism. Various texturing technologies that could minimize the optical loss of mc-silicon solar cells are explained. Finally, next generation texturing technology to survive in the fierce cost competition of photovoltaic market is discussed.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2007년도 추계학술대회 논문집
• /
• pp.162-165
• /
• 2007

AAO(Anodic Aluminum Oxidation) method has been known that it is practically useful for the fabrication of nano-structures and makes it possible to fabricate the highly ordered nano masters on large surface and even on the 2.5 or 3D surface at low cost comparing to the expensive e-beam lithography or the conventional silicon processing. In this study, by using the multi-step anodizing and etching processes, highly ordered nano patterned master with concave shapes was fabricated. By varying the processing parameters, such as initial matter and chemical conditions; electrical and thermal conditions; time scheduling; and so on, the size and the pitch of the nano pattern can be controlled. Consequently, various alumina/aluminum nano structures can be easily available in any size and shape by optimized anodic oxidation in various aqueous acids. In order to replicate nano patterned master, the resulting good filled uniform nano molded structure through electro-forming process shows the validity of the fabricated nano pattern masters.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2005년도 추계학술대회 논문집
• /
• pp.698-701
• /
• 2005

We have investigated experimentally a nano patterning using electron beam lithography for the nickel stamper fabrication. Recently, DVD and Blu-ray disk(BD) have nano-scale patterns in order to increase the storage density. Specially, BD has 100nm-scale patterns which are generally fabricated by electron beam lithography. In this paper, we found optimum condition of electron-beam lithography for 100nm-scale patterning. We controlled various conditions of EHP(acceleration voltage), beam current, dose and aperture size in order to obtain optimum conditions. We used 100nm-thick PMMA layer on a silicon wafer as photoresist. We found that EHP was the most dominant factor in electron-beam lithography.