• 한국세라믹학회지
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• 제41권10호
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• pp.788-791
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• 2004

입자크기가 수 nm인 고농도 은 나노 졸을 이용하여 잉크젯 기법으로 은 미세라인을 형성하고자 하였다. 고분자전해질을 사용하여 합성한 $10wt\%$ 농도의 은 나노 졸의 입자크기는 10nm 이하였으며, 은 나노 졸을 이용한 미세 라인의 인쇄특성은 은 나노 졸의 접촉각에 매우 깊은 관계를 갖고 있었다. 순수한 ITO 기판에서 은 나노 졸은 높은 접촉각을 나타내었으며, dot 형상이 나타났다. 그러나 100ppm의 Polyethylenimine(PEI)을 코팅한 ITO 기판은 젖음성이 크게 개선되었으며, 잉크젯 기법을 이용하여 $60\~100{\mu}m$의 선폭을 갖는 은 나노 졸의 미세라인 형성이 가능함을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 동계학술발표회 논문집
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• pp.133-134
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• 2009

Cold temperature development (CTD) of electron beam (EB) patterned resists and subsequent dry etching were investigated for fabrication of nano-patterned Niobium (Nb). Bulky Nb fims on GaAs substrates were deposited with EB evaporation. Line patterns on Nb cathode were fabricated by EB patterning and reactive ion etching (RIE). Size deviations of nano-sized line patterns from CAD designed patterns are dependent on the EB total exposure, but it can be improved by CTD of EB-exposed resist. Line patterns of 10 to 300 nm widths of EB-exposed resist patterns were drawn under various exposure conditions of $0.2{\mu}s$/dot (total 240,000 dot) with a constant current (50 pA). Compared with room temperature development (RTD), the CTD improves pattern resolution due to the suppression of backscattering effect. RIE with $CF_4$ was performed for formation of several nano-sized line patterns on Nb. Each EB-resist patterned samples with RTDs and CTDs were etched with two different $CF_4$ gas pressures of 5 Pa. Nb etching rate increases while GaAs (or ZEP) etching rate decreases as the chamber pressure increases. This different dependent of the etching rate on the $CF_4$ pressure between Nb and GaAs (or ZEP) has a significant meaning because selective etching of nano-sized Nb line patterns is possible without etching of the underlying active layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• 한국자기학회지
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• 제18권2호
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• pp.49-53
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• 2008

50 nm pitch의 magnetic dot pattern을 갖는 hard disk drive용 patterned media를 nanoimprint lithography(NIL) patterning과 electroplating 공정을 이용하여 제작하고 자기 및 결정구조 특성을 관찰하였다. Patterned media는 Si(100) wafer 위에 Ru(20nm)/Ta(5 nm)/$SiO_2$(100 nm)를 순차적으로 증착한 후 nanoimprint lithography를 이용하여 25 nm half pitch의 hole pattern을 형성하고 그 후 패터닝된 기판을 plasma ashing 공정을 이용하여 기판의 Ru층을 노출시킨뒤 electroplating을 이용하여 Co-Pt 합금막을 증착하여 제작하였다. Magnetic force microscopy(MFM) 분석을 이용하여 제작된 각각의 magnetic dot pattern이 single domain 특성과 수직자기이방성을 가지고 있음을 확인하였고, superconducting quantum interference device(SQUID) 분석을 통하여 2900 Oe이상의 높은 수직방향 보자력을 확인하였다.

• Macromolecular Research
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• 제17권3호
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• pp.181-186
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• 2009

We fabricated ordered micro/nano patterns induced by controlled dewetting on the topographically patterned PS/P4VP bilayer thin film. The method is based on utilizing microimprinting lithography to induce a topographically heterogeneous bilayer film that allows the controlled dewetting upon subsequent thermal annealing. The dewetting that was initiated strictly at the boundary of the thicker and thinner regions was guided by the presence of the topographic structure. The dewetting front velocity of the microdomains in the confined regions was linearly proportional to the measurement time, which enabled us to control the size of the dewet domain with annealing time. In particular, the submicron sized dot arrays between lines were generated with ease when the dewetting was confined into geometry with a few microns in size. The kinetically driven, non-lithographical pattern structures accompanied the pattern reduction to 400%. The pattern arrays on a transparent glass substrate were especially useful for non-circular microlens arrays where the focal length of the lens was easily tunable by controlling the thermal annealing.

• Design & Manufacturing
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• 제13권4호
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• pp.40-44
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• 2019

The light diffusion component spreads the light from one point evenly over a large area. Various types of light diffusion parts such as films and lenses are applied in the high-tech industries such as LCD display devices, lighting devices, and solar energy generation. Among these, a diffuser sheet (Diffuser Sheet) has a function to uniformly distribute the light, and various studies have been conducted to improve its function. The shape of the conventional light diffusion pattern is mainly made of a dot or hemispherical shape. In this study, a rectangular cone-shaped structure having a light diffusion function and an advantage of controlling the angle of refraction of light was fabricated by using a solenoid indentation process. The change in shape of the indentation structure was analyzed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.272-273
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• 2013

Some living thingsuse micro- or nano- structures for living in nature. Scientists and engineers made efforts to mimic them, and they succeeded in making new types of applications. They used 'Namib desert beetle' to self-filling device by moisture harvesting and 'lotus leaf' to self-cleaning device by water repelling. 'Namib desert beetle' and lotus leaf have micro-patterns on their surface, which consists of hydrophobic or hydrophilic materials [1]. Moreover, micro-patterns on the surface make self-filling or self-cleaning property enhanced because of the surface roughness. Surface roughness enhances wettability [2]. Micro-pattern is a significant factor to make the surface be functional, so we want to make new types of functional surface by micro-patterning. In this work,we make several functional micro-patterns (radial, line, and dot arrays) using maskless lithography and analyze the characteristics of each micro-pattern. In order to analyze and understand surface characteristics, micro-patterns with varying sizes are investigated. All experiments are proceeded on mr-DWL5 photo resists coated on silicon wafers in same condition. All the experiments have demonstrated good performances about hydrophobic or hydrophilic property corresponding to their material and structural combinations. In radial micro-pattern, although the surface is flat, water drops on hydrophilic radial pattern can be convergent to a middle point and water drops on hydrophobic radial pattern can be divergent from the middle point. In line array micro-pattern, water drops can roll off along only one direction in parallel with the line arrays. Such phenomena might be mainly caused by the local change of surface roughness. From these results, controlling the movement and direction of water drops is made feasible without introducing a slope, which can potentially be used for new types of applications.

• 한국진공학회지
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• 제18권5호
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• pp.352-357
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• 2009

본 연구에서는 1.1 eV의 에너지대역을 흡수할 수 있는 InAs 양자점구조와 1.3 eV의 에너지 대역을 흡수 할 수 있는 InGaAs 양자우물구조를 이용한 텐덤형 태양전지의 구조를 1D poisson을 이용해 설계하고, 분자선 에피택시 장비를 이용하여 각각 5, 10, 15층씩 쌓은 양자점 및 양자우물구조를 삽입하여 p-n접합을 성장하였다. Photoluminescence (PL) 측정을 이용한 광학적특성 평가에서 양자점 5층 및 양자우물 10층을 삽입한 구조의 PL 피크가 가장 높은 상대발광강도를 나타냈으며, 각각 1.1 eV 및 1.3 eV에서 57.6 meV 및 12.37 meV의 Full Width at Half Maximum을 나타내었다. 양자점의 밀도 및 크기는 Reflection High-Energy Electron Diffraction system과 Atomic Force Microscope를 이용해 분석하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 I-V 측정을 통하여 GaAs층의 두께(20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. GaAs 층의 두께가 30 nm 및 50 nm의 터널접합에서는 backward diode 특성을 나타낸 반면, 20 nm GaAs층의 GaAs/AlGaAs 터널접합에서는 다이오드 특성 곡선을 확인하였다.

• 접착 및 계면
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• 제19권4호
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• pp.163-166
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• 2018

이 딥펜 나노리소그라피(DPN)는 원자 힘 현미경(AFM)을 기반으로 하는 나노 및 마이크로 패턴 제조 기술이다. 다양한 잉크 물질을 AFM 탐침에 코팅하여 탐침과 기판 사이에 형성된 물 메니스커스를 통해 기판으로 전이시켜 패턴을 제조한다. 본 연구에서는, 실란 전처리된 AFM 탐침 표면에 불소 실란 잉크 용액을 코팅하고 하이드록시기로 개질된 실리콘 기판 위에 접촉시킨 후, DPN 기술을 이용하여 표면으로 잉크 물질을 전이시키는 연구를 진행하였다. HDFDTMS 잉크 물질의 dot 어레이 패턴을 안정적으로 제조하였으며, AFM 탐침과 기판 사이의 접촉시간에 따라 패턴 크기가 선형적으로 증가하는 전형적인 DPN의 확산 메커니즘을 보였다.