• Journal of the Korean Vacuum Society
• /
• v.17 no.1
• /
• pp.51-57
• /
• 2008

we have demonstrated structural evolution and optical properties of Si-nanowires (NWs) synthesized on Si (111) substrates with nanoscale Au-Si islands by rapid thermal chemical vapor deposition (RTCVD). The Au-Si nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. The Si-NWs were grown by a mixture gas of SiH4 and H2 at a pressure of 1.0 Torr and temperatures of $500{\sim}600^{\circ}C$. Scanning electron microscopy measurements showed that the Si-NWs are uniformly sized and vertically well-aligned along <111> direction on Si (111) surfaces. The resulting NWs are ${\sim}60nm$ in average diameter and ${\sim}5um$ in average length. High resolution transmission microscopy measurements indicated that the NWs are single crystals covered with amorphous SiOx layers of ${\sim}3nm$ thickness. In addition, the optical properties of the NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si main optical phonon peak were observed in Raman spectra of Si-NWs, which indicates a minute stress effects on Raman spectra due to a slight lattice distortion led by lattice expansion of Si-NW structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.241-241
• /
• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.7 no.2
• /
• pp.120-125
• /
• 2006

By employing a rapid solidification method and atmospheric annealing at $450^{\circ}C-1hr$, we were able to manufacture inexpensively granular CuCo alloy ribbons with thickness of $20{\mu}m$ showing giant magnetoresistance (GMR) ratio of more than 5% at a high magnetic field of 0.5T. To verify maximum MR effect, the MR ratio, saturation magnetization, and microstructure change were investigated with Co contents between 5 and 30 at%. It was possible to obtain GMR ratios of 5.2% at 1.2T, and 3% at 0.5T, which implies an appropriate MR for industrial purpose at a Co content of $8{\sim}l4%$. MR ratio was reduced rapidly at a Co content below 5% due to superparamagnetic effect and at a Co content above 20% due to agglomeration of Co clusters. Surface oxidation during rapid solidification and atmospheric annealing did not have much affect on MR ratio. Our result implies that our economic CuCo granular alloy ribbons may be appropriate for high magnetic field sensor applications with wide content range of $8{\sim}14$ at%Co.

• Journal of the Korean Electrochemical Society
• /
• v.27 no.3
• /
• pp.88-96
• /
• 2024

Lithium metal has garnered attention as a promising anode active material thanks to its high specific capacity, energy density, and the lowest reduction potential. However, the formation of dendrites, dendritic crystals that arise during the charge and discharge process, has posed safety and lifetime stability challenges. To resolve this, our study has introduced a novel separator design. This separator features a composite coating of vapor-grown carbon fiber, a conductive material in nanofibers, and silver. We have meticulously studied the impact of this innovative separator on the electrochemical properties of the lithium metal anode, unveiling promising results. To confirm the synergistic effect of VGCF and Ag, a separator with no surface treatment and a separator with only VGCF coated on one side were prepared and compared with the Ag-VGCF-separator. In the case of the bare separator, the Li metal surface is covered with dendrites during the initial charge and discharge process. In contrast, both the VGCF-separator and the Ag-VGCF-separator show Li precipitation inside the conductive coating layer coated on the separator surface. Additionally, the Ag-VGCF-separator showed a more uniform precipitate shape than the VGCF-separator. As a result, the Ag-VGCF-separators show improved electrochemical properties compared to the bare separators and the VGCF-separators.

• Journal of the Korean GEO-environmental Society
• /
• v.16 no.4
• /
• pp.13-22
• /
• 2015

The combined impact of Dissolved Organic Matter (DOM) fouling and inorganic ($CaSO_4,Ca_3(PO_4)_2$) scaling on the retention of TNT (2, 4, 6-Trinitrotoluene), RDX (Hexahydro-1, 3, 5-trinitro-1, 3, 5-triazine) and HMX (1, 3, 5, 7-Tetranitro-1, 3, 5, 7-tetrazocane) explosive contaminants by nano-filtration membrane were studied, since organic fouling and salt scaling are the major limitations for membrane filtration. Results reported here indicate that DOM fouling layer with a humic acid does not necessarily lead to an immediate loss of permeate flux but can result in a severe impact on the flux loss when both humic acid and inorganic scaltants were presented simultaneously. The $Ca_3(PO_4)_2$ mixed with humic acid showd most sever flux loss (42%) compared to that of only humic acid presence (8%). It could be a result that the scaling formation of the NF membrane was dominated by cake layer formation of DOM and it was along with pore blocking by the formation of crystals inside the porous active matrix of the NF membrane. In addition, these results indicated that the membrane selectivity of the explosives retention trended correlated with respect to increasing explosives size (listed by MW) based on greater steric interactions and followed the order (MW, g $mol^{-1}$; removal, %): HMX (296.15; 83%) ${\gg}$ RDX (222.12; 49%) ≋ TNT (227.13; 32%). Because the scaling and fouling layer could lead to a additional cake-enhanced concentration polarisation effect, the retention of explosives with the presence of humic acid in the feed solution and inorganic scaling formation on top of an organic fouling layer do not differ substantially retention from that of pure DI feed and NaCl solution.

• Applied Microscopy
• /
• v.38 no.4
• /
• pp.279-284
• /
• 2008

The phase change materials have been extensively used as an optical rewritable data storage media utilizing their phase change properties. Recently, the phase change materials have been spotlighted for the application of non-volatile memory device, such as the phase change random access memory. In this work, we have investigated the crystallization behavior and microstructure analysis of In-Sb-Te (IST) thin films deposited by RF magnetron sputtering. Transmission electron microscopy measurement was carried out after the annealing at $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$ and $450^{\circ}C$ for 5 min. It was observed that InSb phases change into $In_3SbTe_2$ phases and InTe phases as the temperature increases. It was found that the thickness of thin films was decreased and the grain size was increased by the bright field transmission electron microscopy (BF TEM) images and the selected area electron diffraction (SAED) patterns. In a high resolution transmission electron microscopy (HRTEM) study, it shows that $350^{\circ}C$-annealed InSb phases have {111} facet because the surface energy of a {111} close-packed plane is the lowest in FCC crystals. When the film was heated up to $400^{\circ}C$, $In_3SbTe_2$ grains have coherent micro-twins with {111} mirror plane, and they are healed annealing at $450^{\circ}C$. From the HRTEM, InTe phase separation was occurred in this stage. It can be found that $In_3SbTe_2$ forms in the crystallization process as composition of the film near stoichiometric composition, while InTe phase separation may take place as the composition deviates from $In_3SbTe_2$.