• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.13-17
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• 2006

Dense and periodic arrays of holes and tungsten none dots were fabricated on silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano-size patterns, self-assembling resists were used to produce layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selectively deposited tungsten nano dots were formed inside nano-sized trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon sizes were 26 nm and 30 nm, respectively.

• Journal of the Semiconductor & Display Technology
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• v.13 no.2
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• pp.53-56
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• 2014

In this work, we investigate the operational properties of this proposed device in detail via classical MD simulations. The bi-stability of the GNF(Graphene Nano-flake) shuttle encapsulated in bi-layer GNR could be achieved from the increase of the attractive energy between the GNRs when the GNF approached the edges of the GNRs. This result showed the potential application of the nano-electromechanical GNR memory as a NVRAM.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1389-1392
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• 2009

A series of new symmetric TTF derivatives were designed and synthesized. This facile synthetic method provides an opportunity to prepare TTF-based LC candidates. This series of compounds exhibited smectic A phase based on coplanar TTF core. One of the LC compounds was used as a semiconductor layer to fabricate OTFT.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.216-216
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• 2005

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.183-187
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• 2005

Thin films of diblock copolymers may be suitable for semiconductor device applications since they enable patterning of ordered domains with dimensions below photolithographic resolution over wafer-scale area. We obtained nanometer-scale cylindrical structure of dibock copolymer of polystyrene-block-poly(methylmethacrylate), PS-b-PMMA, also demonstrate pattern transfer of the nanoporous polymer using both reactive ion etching. The size of fabricated naonoholes were about 10 nm. Fabricated nanopattern surface was observed by field emission scanning electron microscope (FESEM).

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.41-46
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• 2006

Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.1-5
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• 2006

The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.39-40
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.253.1-253.1
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• 2007