Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)
- 2005.09a
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- Pages.183-187
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- 2005
Fabrication of Nanopatterns by Using Diblock Copolymer
- KANG GIL BUM (Semiconductor Materials and Devices Lab., Korea Institute of Science & Technology, Dept of Nano & Electronic Physics, Kookmin University) ;
- KIM SEONa-IL (Semiconductor Materials and Devices Lab., Korea Institute of Science & Technology) ;
- KIM YONG TAE (Semiconductor Materials and Devices Lab., Korea Institute of Science & Technology) ;
- KIM YOUNG HHAN (Semiconductor Materials and Devices Lab., Korea Institute of Science & Technology) ;
- PARK MIN CHUL (Semiconductor Materials and Devices Lab., Korea Institute of Science & Technology) ;
- KIM SANG JIN (Semiconductor Materials and Devices Lab., Korea Institute of Science & Technology) ;
- LEE CHANG WOO (Dept of Nano & Electronic Physics, Kookmin University)
- Published : 2005.09.01
Abstract
Thin films of diblock copolymers may be suitable for semiconductor device applications since they enable patterning of ordered domains with dimensions below photolithographic resolution over wafer-scale area. We obtained nanometer-scale cylindrical structure of dibock copolymer of polystyrene-block-poly(methylmethacrylate), PS-b-PMMA, also demonstrate pattern transfer of the nanoporous polymer using both reactive ion etching. The size of fabricated naonoholes were about 10 nm. Fabricated nanopattern surface was observed by field emission scanning electron microscope (FESEM).
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