• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2012년도 제38회 춘계학술대회논문집
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• pp.429-434
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• 2012

금속 연료로 사용되는 마이크로/나노 알루미늄 입자를 산화피막에 의한 점화 지연을 최소화 하는 점화 방법을 제시 하였다. 알루미늄 입자를 생성시킴과 동시에 가열하여 입자가 생성된 직후 산소와 접촉시 격렬한 산화 반응을 유도하여 점화를 시키는 방법이다. 1064 nm 파장의 Nd:YAG 펄스 레이저를 이용한 레이저 삭마(laser ablation)를 알루미늄 시편에 발생시켜 입자를 생성하였으며, 산란 기법(scattering method)을 이용하여 입자를 가시화하여 생성을 확인하였다. 10.6 ${\mu}m$ 파장의 $CO_2$ 연속 레이저를 사용하여 알루미늄 시편을 가열하고 생성된 입자의 점화 열원으로 사용하여 알루미늄 입자가 점화되고 연소되어 이동하는 궤적을 확인하였다.

• 한국재료학회지
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• 제21권5호
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.479-479
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• 2011

Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

• 한국레이저가공학회지
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• 제17권1호
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).

• Bulletin of the Korean Chemical Society
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• 제28권1호
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• pp.53-58
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• 2007

In the dehydrogenation of ethylbenzene to styrene, CO2 could play a role as an oxidant to increase conversion of ethylbenzene and stability as well over TiO2-ZrO2 mixed oxide catalysts. TiO2-ZrO2 catalysts were prepared by co-precipitation method and were characterized by BET surface area, bulk density, X-ray diffraction, temperature programmed desorption of NH3 and CO2. These catalysts were found to be X-ray amorphous with enhanced surface areas and acid-base properties both in number and strength when compared to the respective oxides (TiO2 and CO2). These catalysts were found to be highly active (> 50% conversion), selective (> 98%) and catalytically stable (10 h of time-on-stream) at 600 oC for the dehydrogenation of ethylbenzene to styrene. However, in the nitrogen stream, both activity and stability were rather lower than those in the stream with CO2. The TiO2-ZrO2 catalysts were catalytically superior to the simple oxide catalysts such as TiO2 and ZrO2. The synergistic effect of CO2 has clearly been observed in directing the product selectivity and prolonging catalytic activity.

• 한국분말재료학회지
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• 제11권3호
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• pp.253-258
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• 2004

We report a carbothermal reduction process for massive synthesis of monolithic W$_{18}$O$_{49}$ phase from tungsten oxide in the presence of carbon source. Carbon black powder was used as a carbon source and added to WO$_3$ by 40 weight percent. Bundles of W$_{18}$O$_{49}$ rods were formed over the temperature range of 80$0^{\circ}C$$^{\circ}C$ to 90$0^{\circ}C$. Pure W$_{18}$O$_{49}$ bundles could be separated from the mixture of W$_{18}$O$_{49}$ and residual carbon black powder. Field emission character of W$_{18}$O$_{49}$ phase was determined using the extracted W$_{18}$O$_{49}$ rods. Flat lamp fabricated from the W$_{18}$O$_{49}$ rods showed the turn-on field of 9.3 V/${\mu}m$.

• 한국산학기술학회논문지
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• 제15권2호
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• pp.1222-1227
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• 2014

기록물들은 정보전달을 위한 수단일 뿐만 아니라, 역사적 문화적으로 매우 중요한 가치를 지니고 있어 각각의 기록매체에 적합한 보존대책을 수립하고 적용해야만 한다. 특히 종이기록물은 시간이 지나면 생물손상 및 화학적인 반응에 의해 열화가 진행되며, 안전한 보존을 위해서 탈산 및 살균기능 처리를 필요로 한다. 본 연구에서는 종이기록물의 효과적인 보존처리를 위하여 15~30nm 크기의 나노산화아연(ZnO)과 나노산화마그네슘(MgO)을 합성하였다. 합성한 나노화합물들을 종이기록물에 적용한 결과, 탈산효과와 항균효과가 우수한 것으로 나타났다. 또한, 합성된 나노화합물들은 구성성분이 100%(Pb, Cd, As 비검출)에 가까워 종이기록물에 탈산처리한 후 중금속으로 인하여 발생할 수 있는 기록물의 훼손이 없을 것으로 판단된다.

• 식품과학과 산업
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• 제50권2호
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• pp.52-59
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• 2017

나노포장은 나노물질 첨가에 따라 항균성, 가스 및 자외선 차단성과 같은 기능성이 향상된다는 장점이 부각되면서 오랫동안 개발되어 왔다. 하지만 최근들어 이러한 나노물질들이 식품과 직접적으로 접촉되면서 식품으로 이행되어 식품과 함께 섭취될 수 있기 때문에 안전하지 않을 수 있다는 논란이 있다. 독일, 스페인, 영국 등의 많은 유럽 국가들에서는 이러한 문제에 대한 빠른 대처를 위해 2000년대 중반부터 또한 우리나라에서는 2014년부터 나노물질 적용 포장재에서 나노물질의 이행에 대한 연구를 수행하고 있다. 나노물질별, 환경별(온도, 시간), 식품모사용매 또는 식품 유형별에 따른 나노물질의 이행에 대한 연구결과를 바탕으로 향후 안전관리를 위한 방안과 가이드라인 등이 마련되어야 한다.

• 대한금속재료학회지
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• 제49권9호
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• Journal of Electrochemical Science and Technology
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• 제6권3호
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• pp.81-87
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• 2015

This study introduces a facile strategy to prepare metal oxide/conducting polymer nanocomposites that may have promising applications in energy storage devices. Ploy aniline/nano wire manganese dioxide (PANI/NwMnO₂) was synthesized by cyclic voltammetry on glassy carbon electrode. Morphology and structure of the composite, pure PANI, MnO₂ nanowires were fully characterized using XRD and SEM analysis. Electrochemical studies shows excellent synergistic effect between PANI and MnO₂ nanowires which results in its capacitance increase and cycle stability against PANI electrode. Specific capacitances of PANI/NwMnO₂ and PANI were 456 and 190 F/g respectively. The electrochemical performance of electrodes studied using cyclic voltammetry, Galvanostatic charge/discharge and impedance spectroscopy.