• 한국자기학회:학술대회 개요집
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• 한국자기학회 2014년도 자성 및 자성재료 국제학술대회
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• pp.11-11
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• 2014

• Journal of Photoscience
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• 제12권2호
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• pp.87-93
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• 2005

A new assay technique to distinguish between pure compounds and the isomeric mixtures has been suggested using single molecule (SM) fluorescence detection technique. Since the number of emission spots in a fluorophorespread film prepared from a genuine dye solution was determined by experimental condition, the deviation of spot numbers from the expected values could be considered to be an indication of lower purity of the sample solution. The lower limit of sample concentration for this assay was determined to be $5{\times}10^{-10}$ M to show uniform number of expected spots within 10% uncertainties in our experimental condition. An individual fluorescence intensity distribution for a mixture of isomers having doubly different emissivities was simulated by adding distributions obtained from Cy3 and nile red (NR) independently. The result indicated that the mixture could be identified from the pure compounds through the difference in the number of Gaussian functions to fit the distribution. This new assay technique can be applied to the purity test for synthetic biofluorophores which are usually prepared in small quantities not enough for classical ensemble assays.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.637-640
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• 2005

In this paper, we investigate the characteristics of a piezoresistive AFM cantilever in the range of $0\~30{\mu}N$ by using nano force calibrator (NFC), which consists of a high precision balance with resolution of 1 nN and 1-D fine positioning stage. Brief modeling of the cantilever is presented and then, the calibration results are shown. Tests revealed a linear relationship between the probing force and sensor output (resistance change), and the force vs. deflection. From this relationship, the force constant of the cantilever was calculated to 3.45 N/m with a standard deviation of 0.01 N/m. It shows that there is a big difference between measured and nominal spring constant of 1 N/m provided by the manufacturer s specifications.

• 한국정밀공학회지
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• 제27권6호
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• pp.7-16
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• 2010

Physical fundamentals of ultrashort femtosecond lasers are addressed along with emerging applications for precision manufacturing and metrology. Femtosecond lasers emit short pulses whose temporal width is in the range of less than a picosecond to a few femtoseconds, thereby enabling extremely high peak-power machining with less thermal damages. Besides, the broad spectral bandwidth of femtosecond lasers constructed in the form of frequency comb permits absolute distance measurements leading to ultraprecision positioning control and dimensional metrology.

• Macromolecular Research
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• 제15권1호
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• pp.1-4
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• 2007

• 한국정밀공학회지
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• 제14권1호
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• pp.29-51
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• 1997

The purpose of the survey is to identify possible new areas of research relating to nanotechnology and in particular areas in which the established facilities of the Centre for Metrology can be employed to good effect. This survey indicates that nanotechnology, a sub set of the more embracing Nano Science, is a rapidly developing discipline with good potential for Electronic and Mechanical Engineering. Nanotechnology includes three areas: Nanometrology, Nanometer positioning and Control, and Nanomanufacturing. In each of the areas, the current research situation and developing trends have been summarised. Possibilities for future work indicated.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.1085-1086
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• 2011

• 한국기계가공학회지
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• 제17권6호
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• pp.1-6
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• 2018

Recently nano meter size pattern (sub-micro scale) can be machined mechanically using a diamond tool. Many studies have found a 'size effect' which referred to a specific cutting energy increase with the decrease in the uncut chip thickness at micro scale machining. A new analysis method was suggested in order to observe 'size effect' in nano scale machining and to verify the cause of the 'size effect' in this study. The diamond tool was indented to a vertical depth of 1,000nm depth in order to simplify the stress state and the normal force was measured continuously. The tip rounding was measured quantitatively by AFM. Based on the measurements and theoretical analysis, it was verified that the main cause of the 'size effect' in nano scale machining is geometrically necessary dislocations, one of the intrinsic material characteristics. st before tool failure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.264-267
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• 2003

Pitch measurements of 150 nm pitch one-dimensional grating standards were carried out using an contact mode atomic force microscopy(C-AFM) with a high resolution three-axis laser interferometer. It was called as 'Nano-metrological AFM' In Nano-metrological AFM, Three laser interferometers were aligned well to the end of AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$-stablilzed He-Ne laser at a wavelength of 633 nm. So, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM has a traceability to the length standard directly. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement(GUM). The Primary source of uncertainty in the pitch-measurements was derived from repeatability of pitch-measurement, and its value was approx 0.186 nm. Expanded uncertainty(k=2) of less than 5.23 nm was obtained. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.