• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.24.2-24.2
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.529-530
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• 2010

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.179-179
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.124-124
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.208-208
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.78-79
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• 2005

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.3
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• pp.573-579
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• 2001

The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high -integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. As devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impact ionization, electric field and I-V curve with those of lightly doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.311-316
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• 2001

The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. At devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and also newEPI MOSFET for improved structure to weak point of LDD structure by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impart ionization, electric field and I-V curve with those of lightly-doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

• Journal of the Semiconductor & Display Technology
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• v.13 no.2
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• pp.53-56
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• 2014

In this work, we investigate the operational properties of this proposed device in detail via classical MD simulations. The bi-stability of the GNF(Graphene Nano-flake) shuttle encapsulated in bi-layer GNR could be achieved from the increase of the attractive energy between the GNRs when the GNF approached the edges of the GNRs. This result showed the potential application of the nano-electromechanical GNR memory as a NVRAM.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.12
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• pp.1139-1143
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• 2007

A simple method for the fabrication of 3D micro-nano hybrid patterns was presented. In conventional fabrication methods of the micro-nano hybrid patterns, micro-patterns were firstly fabricated and then nano-patterns were formatted on the micro-patterns. Moreover, these micro-nano hybrid patterns could be fabricated on the flat substrate. In this paper, we suggested the fabrication method of 3D micro-nano hybrid patterns using micro-indentation on the anodized aluminum substrate. Since diameter of the hemispherical nano-pattern can be controlled by electrolyte and applied voltage in the anodizing process, we can easily fabricated nano-patterns of diameter of loom to 300nm. Nano-patterns were firstly formatted on the aluminum substrate, and then micro-patterns were fabricated by deforming the nano-patterned aluminum substrate. Hemispherical nano-patterns of diameter of 150nm were fabricated by anodizing process, and then micro-pyramid patterns of the side-length of $50{\mu}m$ were formatted on the nano-patterns using micro-indentation. Finally we successfully replicated 3D micro-nano hybrid patterns by hot-embossing process. 3D micro-nano hybrid patterns can be applied to nano-photonic device and nano-biochip application.