• 한국재료학회지
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• 제19권2호
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• 마이크로전자및패키징학회지
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• 제19권3호
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• pp.77-82
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• 2012

본 연구에서는 칩을 기판에 내장하기 위해 상용화된 CSR사의 bluetooth chip을 이용하여 표면의 솔더볼을 제거하고 PCB소재와 공정을 이용하는 embedded active PCB 공정에 관한 연구를 하였다. 솔더볼이 제거된 칩과 PCB는 구리 도금 공정으로 연결되었으나 열 충격시 표면처리를 하지 않았을 시 칩의 표면과 ABF 간의 de-lamination 현상이 발견되었고, 이를 해결하기 위해 칩의 polyimide passivation layer에 디스미어와 플라즈마 공정을 이용하여 조도 형성을 하는 연구를 진행하였다. SEM(Scanning Electron Microscope) 과 AFM(Atomic Force Micrometer)을 통하여 표면을 관찰하였고, XPS(X-ray Photoelectron Spectroscopy)를 이용하여 표면의 화학적 구조의 변화를 관찰하였다. 실험결과 플라즈마 처리 시 표면 조도형성이 되었으나 그 밀도가 조밀하지 못하였지만 디스미어 공정과 함께 처리하였을 시 조도의 조밀도가 높아 열 충격을 가하였을 시에도 칩의 polyimide layer와 ABF간의 de-lamination 현상이 발견되지 않았다.

• 한국재료학회지
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• 제20권11호
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• pp.600-605
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• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• Progress in Superconductivity
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• 제8권1호
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• pp.119-121
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• 2006

We studied the mechanical and magnetic properties of Y-Ba-Cu-O superconductor with and without resin and Ag impregnation. Bulk YBCO superconductor was manufactured with the top-seeded melt-growth method. Typical sample of 40mm X 20mm X 3mm was made and then 8 holes with 0.5mm diameter were drilled arbitrally. Epoxy resin and $AgNO_3$ were systematically added into the holes to compare the mechanical and magnetic properties of YBCO superconductor before and after reinforcement of resin and Ag. Based on the result of 3 point bending, bending strength increased with increasing amounts of resin and carbon nano-tube. However, it was found that the levitation force decreased after making hole, compared with virgin sample without hole.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.156-156
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• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• 대한기계학회논문집B
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• 제37권10호
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• pp.887-894
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• 2013

복합재의 물성치 해석에 일반적으로 사용되는 일반화된 자기일치모델(Generalized Self-Consistent Model)과 수정된 에쉘비모델(Modified Eshelby Model)을 이용하여 나노유체의 열전도계수를 예측할 수 있음을 보였다. 이 유체의 열전달효과를 대폭 향상시키는 대표적인 메카니즘 중 하나인 나노입자와 기본유체 사이에 존재하는 나노층의 영향을 고려하여 나노유체의 열전도계수를 예측하였다. 본 연구는 나노층의 열전도계수가 일정한 값을 가질 때 기존 대표적인 모델과 동일한 결과를 보였으며, 선형적으로 변할 때 역시 문헌에 있는 모델과 동등한 수준의 예측 값을 보였다. 알루미나와 산화구리를 나노입자로 물과 에틸렌글리콜을 기본유체로 한 나노유체의 열전도계수에 대한 실험결과와 본 모델의 예측결과를 비교함으로써 본 모델의 타당성을 입증하였다.

• 한국분말재료학회지
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• 제22권4호
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• pp.229-233
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• 2015

Porous metallic glass compact (PMGC) are developed by electro-discharge sintering (EDS) process of gas atomized $Zr_{41.2}Ti_{13.8}Cu_{12.5}Ni_{10}Be_{22.5}$ metallic glass powder under of 0.2 kJ generated by a $450{\mu}F$ capacitor being charged to 0.94 kV. Functional iron-oxides are formed and growth on the surface of PMGCs via hydrothermal synthesis. It is carried out at $150^{\circ}C$ for 48hr with distilled water of 100 mL containing Fe ions of 0.18 g/L. Consequently, two types of iron oxides with different morphology which are disc-shaped $Fe_2O_3$ and needle-shaped $Fe_3O_4$ are successfully formed on the surface of the PMGCs. This finding suggests that PMGC witih hydrothermal technique can be attractive for the practical technology as a new area of structural and functional materials. And they provide a promising road map for using the metallic glasses as a potential functional application.

• 한국자기학회지
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• 제15권4호
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• pp.226-230
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• 2005

본 연구에서는 스핀밸브 구조에서 하지층으로 많이 사용되고 있는 Ta 층에 질소를 첨가하여 질소량에 따른 자기적 특성과 열처리 결과를 비교 검토하였다. 또한 하지층에 질소를 첨가하여 확산 방지막으로서 역할과 기판과 하지층과의 접착력을 측정하여 비교하였다. 사용된 스핀밸브는 Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta 구조이다. Ta 박막에 비해 TaN 박막의 질소량이 증가할수록 증착률은 감소하였고, 비저항과 표면 거칠기는 증가하였다. 고온에서 열처리 후 측정한 XRD 결과를 보면 Si/Ta 박막에서는 규소화합물이 생성된 반면 Si/TaN 박막에서는 규소화합물을 발견할 수 없었다. 자기저항비(MR)와 교환결합자장($H_{ex}$)은 질소량이 4.0 sccm 이상에서는 감소하였다. 열처리 결과 자기저항비는 하지층이 Ta인 시편과 질소량이 4.0 sccm까지 혼합된 TaN 시편은 $200^{\circ}C$까지는 약 $0.5\%$ 정도 증가하다가 감소하였다. 기판과 하지층과의 접착력을 측정한 결과 Ta 박막보다 질소량이 8.0 sccm인 TaN 박막인 경우 약 2배 강한 접착력을 보였다. 본 연구 결과에 의하면 하지층 증착 시 아르곤 가스에 3.0 sccm 정도의 질소 가스를 혼합하여 사용하면 자기적 특성에 크게 영향을 주지 않으면서 확산 방지막, 접착력 향상등의 이점을 얻을 수 있으리라 사료된다.