• Journal of IKEEE
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• v.25 no.4
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• pp.735-740
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• 2021

In this paper, we propose a new ESD protection device with high holding voltage with low current gain of parasitic NPN BJT by improving the structure of the existing LTDDSCR. The electrical characteristics of the proposed protection device were analyzed by HBM simulation using Synopsys' TCAD simulation, and the operation of the added BJT was confirmed by current flow, impact ionization and recombination simulation. In addition, the holding voltage characteristics were optimized with the design variables D1 and D2. As a result of the simulation, it was verified that the new ESD protection device has a higher holding voltage compared to the existing LTDDSCR and has a symmetrical bidirectional characteristic. Therefore, the proposed ESD protection device has high area efficiency when applied to an IC and is expected to improve the reliability of the IC.

• Asian-Australasian Journal of Animal Sciences
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• v.10 no.4
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• pp.357-363
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• 1997

The effect of replacement of cotton seed meal (CSM), with various levels and sources of non-protein nitrogenous (NPN), substances on in vitro ruminal fermentation were studied. Cotton seed meal, in control ration provided nitrogen equivalent to 12.5 percent crude protein while in experimental ration was replaced at 30, 50 & 70 percent levels with urea, diammonium phosphate (DAP) and biuret, respectively. The results of incubation upto 48 hours indicated an improvement in digestibility by replacement of CSM with urea and biuret upto 50 percent protein equivalent, but not with DAP. Bacterial count from cultures containing 50% nitrogen from biuret was significantly higher than DAP, urea and CSM. Various sources of nitrogen produced $NH_3-N$ in increasing order of CSM, biuret, DAP and urea. Increasing levels of NPN resulted in progressive increase in the levels of $NH_3-N$. The levels of various NPN sources had no effect on pH. However, the pH values determined for urea and CSM were higher than biuret and DAP.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.415-419
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• 1999

Many bipolar logic circuit of conventional occurred problem of speed delay according to deep saturation state of vertical NPN Transistor. In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. The structure of Gate consists of the vertical NPN Transistor, substrate and Merged PNP Transistor. In the result, we fount that tarriers which are coming into intrinsic Base from Emitter and the portion of edge are relatively a lot, so those make Base currents a lot and Gain is low with a few of collector currents because of cutting the buried layer of collector of conventional junction area. Merged PNP Transistor's currents are low because Base width is wide and the difference of Emitter's density and Base's density is small. we get amplitude of logic voltage of 200mv, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26nS in AC characteristic output of Ring-Oscillator connected Gate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.274-283
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• 2014

In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved $f_tBV_{CEO}$ product (397 GHzV). As the $BV_{CEO}$ value is higher for low value of epi layer doping, higher supply voltage can be used to increase the $f_t$ value of the HBT. At 1.8 V $V_{CE}$, the $f_tBV_{CEO}$ product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV $f_tBV_{CEO}$ product at 1.2 V $V_{CE}$). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.1
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• pp.40-48
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• 2000

1A novel bipolar linear transconductor and its application to operational transconductance amplifier(OTA) for low-voltage low-power signal processing is proposed. The transconductor consists of a npn differential-pair with emitter degeneration resistor and a pnp differential-pair connected to the npn differential-pair in cascade. The bias current of the pnp differential-pair is used with the output current of the npn differential-pair for wide linearity and temperature stability. The OTA consists of the linear transconductor and a translinear current cell followed by three current mirrors. The proposed transconductor has superior linearity and low-voltage low-power characteristics when compared with the conventional transconductor. The experimental results show that the transconductor with transconductance of 50 ${\mu}S$ has a linearity error of less than ${\pm}$0.06% over an input voltage range from -2V to +2V at supply voltage ${\pm}$3V. Power dissipation of the transconductor was 2.44 mW. A prototype OTA with a transconductance of 25 ${\mu}S$ has been built with bipolar transistor array. The linearity of the OTA was same as the proposed transconductor. The OTA circuit also exhibits a transconductance that is linearly dependent on a bias current varying over four decades with a sensitivity of 0.5 S/A.

• Journal of Animal Science and Technology
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• v.44 no.6
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• pp.801-808
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• 2002

Proteolytic activities of some commercial milk clotting enzymes(rennet, trypsin, pepsin, papain W-40, neutrase 1.5 and protease S) in bovine skim milk containing 0.02% $CaCl_2$ were determined by measuring DH(Degree of Hydrolysis), NPN(Non Protein Nitrogen) and by comparing patterns of SDS-PAGE(Sodium Dodecyl Sulphate Polyacrylamide Gel Electrophoresis). The DH of microbial enzymes(neutrase 1.5 and protease S) and trypsin in bovine skim milk were higher than those of pepsin and papain W-40. The amounts of NPN in the milk treated with trypsin and the other animal enzymes(rennet and pepsin) showed the highest and lowest degrees of proteolysis, respectively. SDS-PAGE showed that trypsin and protease S hydrolyzed $\alpha$-lactalbumin and papain W-40 hydrolyzed $\beta$-lactoglobulin slightly, while neutrase 1.5 hydrolyzed both $\alpha$-lactalbumin and $\beta$-lactoglobulin after treating for 90 min. Trypsin and protease S easily hydrolyzed ${\alpha}_s$-casein and $\beta$-casein, which were not hydrolyzed by rennet. Papain W-40 hydrolyzed $\kappa$-casein more than rennet as shown in SDS-PAGE. Based on the results of the experiments, the DH and NPN of trypsin, neutrase 1.5 and protease S were shown to be higher than those of the other enzymes. The SDS-PAGE patterns of papain W-40 and neutrase 1.5 were similar with that of rennet.

• 월간낙농육우
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• v.29 no.12
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• pp.143-149
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• 2009

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.532-535
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• 2007

본 연구에서는 Sentaurus Process를 사용하여 NPN 바이폴라 트랜지스터(BJT)를 시뮬레이션 하였다. 많은 종류의 반도체 소자가 개발되고 있으나 가장 먼저 BJT가 개발되었으며 이후 계속적인 발전을 거듭하여 MOSFET와 함께 개발 발전되었다. BJT를 이용한 회로는 광범위하게 응용되고 있으며 BJT는 여전히 중요한 회로의 한 소자로 사용되고 있다. 뿐만 아니라 BJT는 MOSFET와 결합된 집적회로 기술의 응용분야에 사용되고 있다. 이는 BJT 특성들이 특별하게 설계된 많은 반도체 소자에서 자주 사용된다는 것을 의미한다. 본 연구에서는 그 중에서도 특성상 많이 사용되는 NPN BJT를 시뮬레이션 프로그램인 Sentaurus Process를 통하여 구조의 특성을 파악하고자 한다.

• Journal of Wetlands Research
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• v.9 no.1
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• pp.99-105
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• 2007

Nonylphenol polyetoxylates (NPnEOs) metabolites; nonylphenol (NP), nonylphenol monoethoxylate (NP1EO), nonylphenoxyacetic acid (NPEC) (collectively referred to "NPE-c") were examined for their degradations by using of lab-scale UV/photocatalytic silicagel (ultraviolet photocatalytic degradation in the presence of silicagel coated with titanium dioxide as a catalyst) reactor. NPE-c degradations by UV/photocatalytic silicagel treatment reached approximately 85-93 % after 40 min irradiation independently of its initial concentration (between ca. 0.5 and 2.0mg/l). Any intermediates under the NPE-c degradation were not identified by GC/MS sample analysis. Degradations of NPE-c were followed pseudo first-order kinetics. Then, the effectiveness of UV/photocatalytic silicagel treatment for degradation of NPE-c was in the order of NPEC > NP > NP1EO.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.7-19
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• 1981

Anodization method is utilized in order to measure diffusion profiles of boron and arsenic in silicon. The solution used for silicon anodization is Ethylene glycol +KNO3(0.04N), The thickness of silicon which is consumed by a single 200V anodization is 460$\pm$40A regardless of wafer type. The profiles of boron and arsenic in silicon after predeposition process are investigated. The diffusion coefficients of both dopants depending on impurity concentration are extrated from these profiles. The base pull-in effect has been observed in prototype npn transistors with arsenic doped emitter.