• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1513-1514
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• 2011

본 논문에서는 양극을 Ni, Au, Ag 등으로 하여 소자를 만들어 본 후에 가장 효율이 좋은 금속으로 양극을 정하고 유기물 층의 두께에 따른 마이크로 캐비티에 의한 스펙트럼의 이동효과를 시뮬레이션을 통해 살펴보았다. 소자의 기본 구조는 전면 발광 방식으로 양극/NPB/Alq3/LiF/Al이다. 음극을 LiF/Al과 Mg/Ag로 구조로 제작한 후에 기본 구조와 결과를 비교하였다. 실험결과를 시뮬레이션 결과와 비교 검토하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.25-26
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• 2008

In this paper, the white organic light-emitting diode(OLED)was fabricated using the DPVBi of blue emitting material and a rubrene of orange color of fluorescent dye by vacuum evaporation processes. The device structure of OLED was Glass/ITO/2T-NATA(15nm)/NPB(3nm)/DPVBi(3nm)/DPVBi rubrene[2%](10nm)/DPVBi(25nm)/$Alq_3$ or New-ETL(60nm) /LiF(0.5nm)/ Al(100nm). The device with the $Alq_3$, layer shows orange color, and the luminance of 1000cd/$m^2$ at an applied voltage of 10.4V. On the other hand, the New-En layer results in white color, CIE coordinates of (0.327, 0.323), and the lowered driving voltage of 5V for achieving the same luminance value.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.121-122
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• 2008

Blue emitting materials have been explored by various researchers. However, blue-emitting materials with high luminous efficiency, good color purity, and thermal stability are still much desired. In this study, we synthesized a new blue luminescent material, $SnDP(HPB)_2$ which is low molecular compound and thermal stability. The PL spectrum of $SnDP(HPB)_2$ was observed blue at the wavelength of 447nm. The ionization potential(IP) and the electron affinity(EA) of $SnDP(HPB)_2$ was measured to be 6.7 eV and 3.0 eV, respectively. The fundamental structure of the OLED was ITO/NPB/$SnDP(HPB)_2/Alq_3$/LiF/Al. As a Result, we obtained to enhance the performance of blue OLED.

• 한국정보과학회:학술대회논문집
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• 한국정보과학회 2005년도 한국컴퓨터종합학술대회 논문집 Vol.32 No.1 (A)
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• pp.52-54
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• 2005

Beowulf 타입의 리눅스 클러스터 시스템의 핵심노드인 계산노드는 일반적으로 범용 엔트리급 서버 및 PC 등을 이용하여 구성되며, 이 계산노드의 성능은 전체 클러스터의 계산 성능을 결정하는 가장 중요한 요소 중의 하나이다. 이에 본 논문에서는 현재 시중에서 유통 중인 대표적인 로엔드 플랫폼-Xeon, P-IV, Opteron, Athlon64-들을 대상으로 HPL, NPB, stream등 고성능 컴퓨팅 분야에서 널리 쓰이는 벤치마킹 테스트 도구를 사용하여 개별 노드의 성능을 측정하여 비교 분석하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1447-1450
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• 2007

The electrical properties of organic lightemitting devices (OLEDs) with wide-bandgap impurity-doped emitting layers (EML) were investigated. While the luminous efficiency of OLEDs with a NPB or a DPVBi-doped $Alq_3$ EML did not vary significantly with the current density, that of the OLEDs with a BCP-doped $Alq_3$ EML changed dramatically.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1650-1653
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• 2007

We demonstrate fluorescent green organic lightemitting diodes employing a rhenium oxide ($ReO_3$)-doped N,N-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transporting layer (HTL). The devices exhibit significantly reduced driving voltages as well as prolonged lifetime. Details of $ReO_3$ doping effects are described in terms of charge transfer complex and stabilization of HTL morphology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1034-1037
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• 2002

In this study, we fabricated red organic electrolu-minescent device with a doping material (DCJTB), and The cell structure used ITO:indium tin oxide $[20{\Omega}]$/CuPc:Hole injection layer 20nm/NPB: Hole transfer layer 40nm/$Alq_3$ (host) + DCJTB(1% or 3%) (guest) Emitting layer 40nm/$Alq_3$ : Electron transfer layer 30nm/Al :Cathode layer 150nm. the luminescent layer consisted of a host material. 8-hydrozyquinoline aluminum $(Alq_3)$, and DCJTB dye as the dopant. a stable red emission (chromaticity coordinates : x=0.64, y=0.36) was obtained in this cell with the luminance range of $100-600cd/m^2$. we study the electrical and optical properties of devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.980-983
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• 2002

We investigated the effect of quinolate metal complex layer as an electron injection layer on the performance of OLEDs and optimized the device efficiency by varying from 0.5 to 10nm thickness of Liq layer. OLED with a structure of indium tin oxide/$\alpha$-napthylphenylbiphenyl(NPB,40nm)/tris-(8-hydroxyquinoline)aluminum(Alq3, 50nm)/Aluminum(150nm) were fabricated in sequence. The device with 1nm Quinolate metal complex layer showed significant enhancement of the device performance.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.496-498
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• 2008

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high quantum efficiency. Wide-energy-gap material, 1,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC), with high triplet energy level was used as a hole transporting layer. Electrophosphorescent devices fabricated using TAPC as a hole-transporting layer and N,N'-dicarbazolyl-4,4'-biphenyl (CBP) doped with fac-tris(2-phenylpyridine) iridium [Ir(ppy)3] as the emitting layer showed the maximum external quantum efficiency ($\eta_{ext}$) of 19.8 %, which is much higher than the devices adopting 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (NPB) (${\eta}B_{ext}=14.6%$) as a hole transporting layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.450-453
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• 2008

We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3',7',3",7"-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene[PNA-DPtzB]. Synthesized materials exhibited high Tg in the range of $175\;-\;202^{\circ}C$. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31cd/A at $10mA/cm^2$.