• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.3
• /
• pp.193-198
• /
• 2005

NOR type flash 32 ${\times}$ 32 way are fabricated by using the typical 0.35 ${\mu}{\textrm}{m}$ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.4
• /
• pp.180-183
• /
• 2006

We report for the first time two-bit operational characteristics of a high-density NOR-type polysilicon-oxide-nitride-oxide-silicon (SONOS) array with common source line (CSL). An undesired disturbance, especially drain disturbance, in the NOR array with CSL comes from the two-bit-per-cell operation. To solve this problem, we propose an efficient bulk-biased programming technique. In this technique, a bulk bias is additionally applied to the substrate of memory cell for decreasing the electric field between nitride layer and drain region. The proposed programming technique shows free of drain disturbance characteristics. As a result, we have accomplished reliable two-bit SONOS array by employing the proposed programming technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.35-38
• /
• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.117-120
• /
• 2005

The SONOS devices have been fabricated by the conventional $0.35{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with NOR array. Two-bit operation using conventional process achieve the high density memory compare with other two-bit memory. Lateral diffusion phenomenon in the two-bit operation cause soft error in the memory. In this study, the programming conditions arc investigated in order to reduce lateral diffusion for two-bit operation of CSL-NOR type SONOS flash cell.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.49 no.4
• /
• pp.26-33
• /
• 2012

As the flash memory has increased the market share of data storage in imbedded system and occupied the most of area in a system, It has a profound impact on system reliability. Flash memory is divided NOR/NAND-type according to the cell array structure, and is classified as SLC(Single Level Cell)/MLC(Multi Level Cell) according to reference voltage. Although NAND-type flash memory is slower than NOR-type, but it has large capacity and low cost. Also, By the effect of demanding mobile market, MLC NAND-type is widely adopted for the purpose of the multimedia data storage. Accordingly, Importance of fault detection algorithm is increasing to ensure MLC NAND-type flash memory reliability. There are many researches about the testing algorithm used from traditional RAM to SLC flash memory and it detected a lot of errors. But the case of MLC flash memory, testing for fault detection, there was not much attempt. So, In this paper, Extend SLC NAND-type flash memory fault detection algorithm for testing MLC NAND-type flash memory and try to reduce these differences.

• Proceedings of the IEEK Conference
• /
• 2001.06a
• /
• pp.69-72
• /
• 2001

Blind equalization of transmission channel is important in communication areas and signal processing applications because it does not need training sequence, nor does it require a priori channel information. Recently, Tong et al. proposed solutions for this problem exploit the diversity induced by antenna array or time oversampling, leading to the second order statistics techniques, fur example, subspace method, prediction error method, and so on. The linear prediction error method is perhaps the most attractive in practice due to the insensitive to blind equalizer length mismatch as well as for its simple adaptive filter implementation. Unfortunately, the previous one-step prediction error method is known to be limited in arbitrary delay. In this paper, we induce the optimal delay, and propose the adaptive blind equalizer with multi-step linear prediction using RLS-type algorithm. Simulation results are presented to demonstrate the proposed algorithm and to compare it with existing algorithms.

• International Journal of Naval Architecture and Ocean Engineering
• /
• v.9 no.3
• /
• pp.239-245
• /
• 2017

As a new technical approach, wave energy converter by using vertical motion of water in the multiple water chambers were developed to realize actual wave power generation as eco-environmental renewable energy. And practical use of wave energy converter was actually to require the following conditions: (1) setting up of the relevant device and its application to wave power generation in case that severe wave loading is avoided; (2) workability in installation and maintenance operations; (3) high energy conversion potential; and (4) low cost. In this system, neither the wall(s) of the chambers nor the energy conversion device(s) are exposed to the impulsive load due to water wave. Also since this system is profitable when set along the jetty or along a long floating body, installation and maintenance are done without difficulty and the cost is reduced. In this paper, we describe the system which consists of a float, a shaft connected with another shaft, a rack and pinion arrangement, a ratchet mechanism, and rotary type generator(s). Then, we present the dynamics model for evaluating the output electric power, and the results of numerical calculation including the effect of the phase shift of up/down motion of the water in the array of water chambers aligned along the direction of wave propagation.

• Plant Resources
• /
• v.1 no.1
• /
• pp.33-37
• /
• 1998

Carotenoid compounds in embryos of wild-type(WT) and viviparous mutants of maize(Zea mays L.) were analyzed using high performance liquid ehromatography (HPLC) with a photodiode array detector. Zeaxanthin accumulates in WT embryos as the major carotenoid. Phytoene accumulates in vp2 and vp5. Phytofluene in w3 and ${\xi}$-carotene in the vp9 mutant embryos. This indicates that the vp2 and vp5 mutants impair phytoene desaturase from 15-cis-phytoene to 15-cis-phytofluene. The w3 mutant has neither an isomerase from 15-cis-phytofluene to all-trans-phytofuene nor phytofluene desaturase from phytofluene to ${\xi}$-carotene. The vp9 mutant does not have the ${\xi}$-carotene desaturase from ${\xi}$-carotene to lycopene. Our analysis shows that the terminal carotenoid. ${\gamma}$-carotene(${\beta},{\Psi}$-carotene), accumulates in the vp7 mutant embryos. The ${\varepsilon}$-carotene(${\varepsilon},{\varepsilon}$-carotene), a product of ${\delta}$-carotene(${\varepsilon},{\Psi}$-carotene) in some plants, however, has not been found in maize embryos. The vp7 mutant impairs a cyclization step from ${\gamma}$-carotene to both ${\beta}$-carotene and ${\alpha}$-carotene. We suggest that monocyclic ${\gamma}$-carotene is the sole precursor of both bicyclic ${\beta}$-carotene(${\beta},{\beta}$-carotene) and ${\alpha}$-carotene(${\beta},{\varepsilon}$-carotene) in maize.