• Journal of Korea Fishing Vessel Association
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• v.64
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• pp.51-54
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• 1995

• Proceedings of the Korean Society of Life Science Conference
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• 2001.09a
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• pp.19-21
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• 2001

• Journal of Korean Electronics
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• v.24 no.10
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• pp.56-57
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• 2004

• Proceedings of the Korean Information Science Society Conference
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• 2005.11a
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• pp.931-933
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• 2005

Windows CE는 Microsoft사의 Windows 운영체제 가운데서 가장 작은 운영체제로서 일반 데스크톱 Windows 커널을 수용할 수 없는 소형/임베디드 장비에서 주로 사용되어진다. 현재 Windows CE에서 사용되고 있는 부트로더로는 E-boot(Ethernet bootloader)가 있으며 RAM 이미지와 플래시 이미지 다운로드 기능을 제공한다. E-boot의 문제점으로는 플래시 메모리상에서 부팅을 수행하기 때문에 NOR 타입의 플래시만을 지원하여, 컴팩트 플래시와 같은 NAND 타입의 플래시 지원하지 않는다. 이는 OS Binary 이미지의 용량이 NOR 플래시를 초과할 경우에 수행이 불가능하다는 문제를 발생시킨다. 따라서 본 논문에서는 기존의 E-boot를 수정하여 NDR 플래시보다 상대적으로 가격이 저렴하고 휴대성이 좋은 컴팩트 플래시 메모리를 이용하여 부팅이 가능한 부트로더를 구현한다. 또한 컴팩트 플래시 지원을 위한 새로운 읽기/쓰기 메카니즘을 소개한다.

• 전기의세계
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• v.28 no.8
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• pp.57-65
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• 1979

This paper is concerned with not only the transformation of the logic diagrams to the NAND and the NOR forms but also the inverse transformation deriving the simple Boolean function from a logic diagram. The conversions of the algebraic expression from the AND, OR and NOT operations to the NAND and the NOR operations are usually quite complicated, because they involve a large number of repeated applications of De Morgan's Theorem and the other logic relations. For the derivation of the Boolean function, it becomes difficult because the Boolean function is determined from the De Morgan's theorem in consecutive order until the output is expressed in terms of input variables (9). But, these difficulties are avoided by the use of new techniques, called the TWO-NOTs method and the MOVING-NOT method, that are presented in this paper.

• Environmental Mutagens and Carcinogens
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• v.10 no.2
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• pp.135-145
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• 1990

Silver-binding nucleolar organizer regions (Ag-NORs)염색법을 이용하여 in vivo 및 in vitro에서 발암과정과 관련된 세포증식능을 검토하였다. A/J마우스에 benzo (a) pyrene을 투여하여 유발된 폐선종, 폐선암 및 Sprague-Dawley랫트에 dimethylbenz (a) anthracene투여에 의해 발생된 유선의 선암세포에서 Ag-NORs의 염색상태를 정상 조직과 비교하여 또한 정상마우스 섬유모세포인 NIH3T3에서의 Ag-NORs의 수 및 DNA 증식 억제물질인 caffeine에 의한 변화를 관찰하였다. 은친화성 NOR과련 단백질은 핵내 흑색의 반점으로 나타났으며 정상 폐조직의 세포당 Ag-NORs 수치는 0.87+0.01였으며 양성종양인 폐선종세포 및 악성종양인 폐선암세포에서는 각각 2.33+0.02, 2.56+0.45 정상 유선조직의 세포당 Ag-NORs수치는 1.21+0.16였으며 악성종양인 선암세포는 3.91+0.11로써 종양성 병변에서 유의한 증가를 보였다 (P<0.005).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.5
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• pp.509-520
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• 1992

AIGaAs /GaAs HBT OR /NOR gate. which can be used for high speed digital system was designed. Equivalent circuit parameters of HBT were obtained from Gummel-Poon's model and direct extraction method. Simulation results with PSPI CE showed that propagation delay time and cutoff toggle frequency of designed gate were 25ps and 200Hz, respectively. the designed gate exhibited superior properties to the recently reported HBT ECL and MESFET SCFL when considering the fan-out characteristics and noise margin.

• Asian Pacific Journal of Cancer Prevention
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• v.17 no.8
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• pp.3705-3709
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• 2016

Esophageal cancer is one of the top leading causes of cancer-related deaths in Malaysia. To date, neither the prevalence nor incidence of esophageal cancer nationally have been recorded. Esophageal cancer remains a major and lethal health problem even if it is not common in Malaysia. The late presentation of esophageal cancer makes it a difficult and challenging medical problem. Therefore, more governmental and non-governmental organizations of Malaysia should emphasize primary and secondary prevention strategies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.26-31
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• 2002

To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.13-16
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• 1984

This paper proposes a new layout algorithm in order to minimize chip area in one dimensional MOS - LSI composed of basic cells, such as NAND or NOR gates. The virtval gates are constructed, which represent I/O of signal lines at the left-most and at the right-most side of the MCS gate array. With this, a heuristic algorithm is realized that can minimize the number of straight connectors passing through each gate, and as the result, minimize the horizontal tracks necessary to route. The usefulness of the algorithm proposed is shown by the execution of the experimental program on practical logic circuits.