• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.148-148
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• 2010

플래시 메모리로 대표되는 비휘발성 메모리는 IT 기술의 발달에 힘입어 급격한 성장세를 나타내고 있지만, 메모리 소자의 크기가 작아짐에 따라서 그 물리적 한계에 이르러 차세대 메모리에 대한 요구가 점차 높아지고 있는 실정이다. 따라서, 이러한 문제점에 대한 대안으로서 고속 동작 및 정보의 저장 시간을 향상 시킬 수 있는 nano-floating gate memory (NFGM)가 제안되었다. Nano-floating gate에서 사용되는 nanocrystal (NCs) 중에서 Si nanocrystal은 비휘발성 메모리뿐만 아니라 발광 소자 및 태양 전지 등의 매우 다양한 분야에 광범위하게 응용되고 있지만, NCs의 크기와 밀도를 제어하는 것이 가장 중요한 문제로 이를 해결하기 위해서 많은 연구가 진행되고 있다. 또한, 소자의 소형화가 이루어지면서 기존의 플래시 메모리 한계를 극복하기 위해서 터널베리어에 관한 관심이 크게 증가했다. 특히, 최근에 많은 주목을 받고 있는 개량형 터널베리어는 크게 VARIOT (VARIable Oxide Thickness) barrier와 CRESTED barrier의 두 가지 종류가 제안되어 있다. VARIOT의 경우에는 매우 얇은 두께의low-k/high-k/low-k 의 적층구조를 가지며, CRESTED barrier의 경우에는 반대의 적층구조를 가진다. 이와 같은 개량형 터널 베리어는 전계에 대한 터널링 전류의 감도를 증가시켜서 쓰기/지우기 특성을 향상시키며, 물리적인 절연막 두께의 증가로 인해 데이터 보존 시간의 향상을 달성할 수 있다. 본 연구에서는 박막의 $SiO_2$와 $Si_3N_4$를 적층한 VARIOT 타입의 개량형 터널 절연막 위에 전하 축적층으로 $SiN_x$층의 내부에 Si-NCs를 갖는 비휘발성 메모리 소자를 제작하였다. Si-NCs를 갖지 않는 $SiN_x$전하 축적층은 Si-NCs를 갖는 전하 축적층보다 더 작은 메모리 윈도우와 열화된 데이터 보존 특성을 나타내었다. 또한, Si-NCs의 크기가 감소됨에 따라 양자 구속 효과가 증가되어 느린 지우기 속도를 보였으나, 데이터 보존 특성이 크게 향상됨을 알 수 있었다. 그러므로, NFGM의 빠른 쓰기/지우기 속도와 데이터 보존 특성을 동시에 만족하기 위해서는 Si-NCs의 크기 조절이 매우 중요하며, NCs크기의 최적화를 통하여 고집적/고성능의 차세대 비휘발성 메모리에 적용될 수 있을 것이라 판단된다.

• Geomechanics and Engineering
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• v.29 no.3
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• pp.321-329
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• 2022

Tunnel site where high water pressure is applied, such as subsea tunnel, generally selects the shield TBM (Tunnel Boring Machine) to maintain the tunnel excavation face. The shield TBM has cutters installed, and the cutters wear out during the process of excavation, so it should be checked and replaced regularly. This is called CHI (Cutterhead Intervention). The conventional CHI under high water pressure is very disadvantageous in terms of safety and economics because humans perform work in response to high water pressure and huge water inflow in the chamber. To overcome this disadvantage, this study proposes a new method to dramatically reduce water pressure and water ingress by injecting an appropriate grout solution into the front of the tunnel face through the shield TBM chamber, called New Face Grouting Method (NFGM). The tunnel model tests were performed to determine the characteristics, injection volume, and curing time of grout solution to be applied to the NFGM. Model test apparatus was composed of a pressure soil tank, a model shield TBM, a grout tank, and an air compressor to measure the amount of water inflow into the chamber. The model tests were conducted by changing the injection amount of the grout solution, the curing time after the grout injection, and the water/cement ratio of grout solution. From an economic point of view, the results showed that the injection volume of 1.0 L, curing time of 6 hours, and water/cement ratio of the grout solution between 1.5 and 2.0 are the most economical. It can be concluded that this study has presented a method to economically perform the CHI under the high water pressure.

• Proceedings of the Korea Concrete Institute Conference
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• 2009.05a
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• pp.67-68
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• 2009

This research aims at investigating the seismic behavior of RC bridge piers subjected to NFGM in low or moderate seismic region according to Volumetric Confinement Steel Ratio through the shaking table test unlike original way of the test. This investigation deal with the estimate with SARCF for shaking table test by the comparative analysis for the value of FFT.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.904-906
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• 2009

Organic field-effect transistor (OFET) memory is an emerging device for its potential to realize light-weight, low cost flexible charge storage media. Here we report on a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating-gate memory (NFGM) with top-gate/bottom-contact device configuration. A reversible shift in the threshold voltage ($V_{Th}$) and the reliable memory characteristics were achieved by incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative electrons at the interface between polystyrene and cross-linked poly(4-vinylphenol).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.3
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• pp.439-446
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• 1997

A traditional notion of composites has been composed as a uniform dispersoid, but now it is proposed without regard to such rule with process development. Functionally Graded Material(FGM) consists of a new material design that is to make intentionally irregular dispersion state. In this study, thermal stress analysis of plasma spraying PSZ/NiCrAlY gradient material was conducted theoretically using a finite-element program. A formations of the model are direct bonding material(NFGM) and FGM with PSZ and NiCrAlY component element. The temperature conditions were $700^{\circ}C$ to 1100.deg. C assuming a cooling-down precess up to room temperature. Fracture damage mechanism was analyzed by the parameters of residual stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.3-4
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• 2005

Germanium nanocrystals(NCs) were formed in the silicon dioxide($SiO_2$) on Si layers by Ge implantation and rapid thermal annealing process. The density and mean size of Ge-NCs heated at $800^{\circ}C$ during 10 min were confirmed by High Resolution Transmission Electron Microscopy. Capacitance versus voltage(C-V) measurements of MOS capacitors with single $Al_2O_3$ capping layers were performed in order to study electrical properties. The C-V results exhibit large threshold voltage shift originated by charging effect in Ge-NCs, revealing the possibility that the structure is applicable to Nano Floating Gate Memory(NFGM) devices.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.93-96
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• 2008

This paper deals with the shaking table test(STT), the Quasi-Static Test(QST), and the Pseudo-Dynamic Test(PDT) to evaluate the seismic performance of RC bridge piers under near fault ground motion. Five scaled specimens were constructed the weight of the superstructure was applied through the prestressing strand at the centroid of the column section during the QST and PDT. However, the STT was simulated. The lateral inertia force of the superstructure by the mass frame which was linked with the pier because of the limited payload of shaking table. Particularly for the STT, friction underneath the mass frame was minimized by special details and it was verified by a series of pre-load test. Scale factor of the RC piers was 4.25.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.219-219
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• 2010

기존의 플로팅 타입의 메모리는 소자의 소형화에 따른 인접 셀 간의 커플링 현상과 전계에 따른 누설전류의 증가 등과 같은 문제가 발생한다. 이에 대한 해결책으로서 전하 저장 층을 폴리실리콘에서 유전체를 사용하는 SONOS 형태의 메모리와 NFGM (Nano-Floating Gate Memory)연구가 되고 있다. 그러나 높은 구동 전압, 느린 쓰기/지우기 속도 그리고 10년의 전하보존에 대한 리텐션 특성을 만족을 시키지 못하는 문제가 있다. 이러한 문제를 해결 하고자 터널베리어를 엔지니어링 하는 TBM (Tunnel Barrier Engineering Memory) 기술에 대한 연구가 활발히 진행 중이다. TBM 기술은 터널 층을 매우 얇은 다층의 유전체를 사용하여 전계에 따른 터널베리어의 민감도를 증가시킴으로써 빠른 쓰기/지우기 동작이 가능하며, 10년의 전하 보존 특성을 만족 시킬 수 있는 차세대 비휘발성 메모리 기술이다. 또한 고유전율 물질을 터널층으로 이용하면 메모리 특성을 향상 시킬 수가 있다. 일반적으로 TBM 기술에는 VARIOT 구조와 CRESTED 구조로 나눠지는데 본 연구에서는 두 구조의 장점을 가지는 Staggered tunnel barrier 구조를 $Si_3N_4$와 HfAlO을 이용하여 디자인 하였다. 이때 HfO2와 Al2O3의 조성비는 3:1의 조성을 갖는다. $Si_3N_4$와 HfAlO을 각각 3 nm로 적층하여 리세스(Recess) 구조의 트랜지스터를 제작하여 차세대 비휘발성 메모리로써의 가능성을 알아보았다.