• Bulletin of the Korean Chemical Society
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• v.31 no.7
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• pp.1973-1975
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• 2010

The electronic and adsorption structure of o-phthalaldehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1457-1460
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• 2007

To understand the electronic charge transfer from cathode to an ETL in the TEOLED, the pristine $Alq_3$ thin film and the interfaces of both $Alq_3/Ba$ and $Alq_3/Au$ were investigated by using the NEXAFS spectroscopy. The unoccupied energy state of each interface using the NEXAFS Analyses at the C and OK-edges was assigned and charge transfer from Ba to ${\pi}^{\ast}$ of $Alq_3$ was investigated in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.79-79
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• 2010

The electronic and adsorption structure of O-Phthaladehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface. Through the spectral analysis, we will demonstrate 1-D directional formation of OPA on H-Si(100) surface using NEXAFS and HRPES.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.372-372
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• 2010

We have investigated adsorption of selenophene on Si(100) at room temperature using high resolution photoemission spectroscopy (HRPES) and near edge X-ray absorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, Se 3d spectra of selenophene on Si(100) show that selenophene is nondissociatively chemisorbed on Si(100)-$2{\times}1$ through [2+2] cycloaddition. NEXAFS has been conducted to characterize the adsorption geometry of selenophene on Si(100). Since the $\pi^*$ orbital of C=C bond show good angular dependence in carbon K-edge NEXAFS spectra, the angle $53{\pm}5^{\circ}$ determined from NEXAFS spectra. This majority structure is consistent with the [2+2] cycloaddition of selenophene to the dimer of the Si(100)-$2{\times}1$ surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.315-315
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• 2011

The ring formation and electronic properties of furan adsorbed on graphene layers grown on 6H-SiC(0001) has been investigated using atomic force microscopy (AFM), near edge X-ray absorption fine structure (NEXAFS) spectra for the C K-edge, and high resolution photoemission spectroscopy (HRPES). Moreover, we observed that furan molecules adsorbed on graphene could be used for chemical functionalization via the lone pair of electrons on the oxygen group, allowing chemical doping. We also found that furan spontaneously formed rings with one of three different bonding configurations and the electronic properties of the ring formed by furan on graphene can be described using by AFM, NEXAFS and HRPES, respectively.

• Bulletin of the Korean Chemical Society
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• v.27 no.12
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• pp.2037-2039
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• 2006

The adsorption and surface reactions of $SO_2$ on Ni(100), c($2{\times}2$)_O/Ni (100) and NiO(111)/Ni(100) surfaces have been investigated using X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) technique. On Ni(100), chemisorbed $SO_2$ is formed at 160 K. When $SO_2$ is adsorbed on c($2{\times}2$)_O/Ni(100) at 160 K, $SO_2$ reacts with oxygen to form $SO_3$ and trace amount of $SO_4$ species. $SO_3$ is adsorbed on this surface with its $C_3$ axis perpendicular to the surface. On a NiO(111)/Ni(100) surface, both $SO_3$ and $SO_4$ species are formed at 160 K from adsorbed $SO_2$.

• Bulletin of the Korean Chemical Society
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• v.18 no.10
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• pp.1082-1085
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• 1997

The Near-Edge X-ray Absorption Fine Structure (NEXAFS) technique and Differential Scanning Calorimetry (DSC) were utilized to investigate the reaction of CH4 and O2 on the MoO3/SiO2 catalyst. The NEXAFS results showed that the stoichiometry of the molybdenum oxide catalyst supported on silica was MoO3. MoO3 was reduced to MoO2 when the catalyst was exposed to CH4 at 773 K. NEXAFS results confirm that lattice oxygen is directly related to the process of CH4 oxidation which takes place on the surface of MoO3/SiO2 catalysts. DSC results show that the structure of MoO3 changes around 573 K and this structural change seems to improve the migration of oxygen in the lattice.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.58-58
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• 2003

Silver doped ZnO (SZO) films were prepared by rf magnetron sputtering on glass substrates with extraordinary designed ZnO target. With the doping source for target, use AgNO$_3$ powder on a various rate (0, 2, and 4 wt.%). We investigated dependence of coating parameter such as dopant content in target and substrate temperature in the SZO films. The SZO films have a preferred orientation in the (002) direction. As amounts of the Ag dopant in the target were increased, the crystallinity and the transmittance and optical band gap were decreased. And the substrate temperature were increased, the crystallinity and the transmittance were increased. But the crystallinity and the transmittance of SZO films were retrograde at 200$^{\circ}C$. Upside facts were related with composition. In addition, the Oxygen K-edge features of the SZO films were investigated by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Changes of optical band gap of the SZO films were explained compared with XRD, XPS and NEXAFS spectra.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.252-257
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• 2011

The ring formation and electronic properties of furan adsorbed on graphene layers grown on 6H-SiC (0001) has been investigated using atomic force microscopy (AFM), near edge X-ray absorption fine structure (NEXAFS) spectra for the C K-edge, and core level photoemission spectroscopy (CLPES). Moreover, we observed that furan molecules adsorbed on graphene could be used for chemical functionalization via the lone pair electrons of the oxygen group, allowing chemical doping. We also found that furan spontaneously form rings with one of three different bonding configurations and the electronic properties of the ring formed by furan on graphene can be described using by AFM, NEXAFS and CLPES, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.456-456
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• 2013

We report the modifications in the electronic structureof ZnO thin films induced by swift heavy ion (SHI) irradiated ZnO thin films by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy at O K-edge was performed at BL10D XAS-KIST beamline at Pohang Accelerator Lab (PAL). ZnO films of 250 nm thickness oriented in [200] plane deposited by RF magnetron sputtering using equal $Ar:O_2$ atmosphere and air annealed at $500^{\circ}C$ for 6 hours for stability were irradiated with 120 MeV Au and 100 MeV O beams separately with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$. High Resolution X-ray diffraction and NEXAFS analysis indicates significant changes in the electronic structure and the SHI effect is different for Ag and O-beams. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization. The NEXAFS results will be presented in detail.