• Title/Summary/Keyword: NCD

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Strategies for the Prevention of Dental Caries as a Non-Communicable Disease (비전염성 질환으로서 치아우식증에 대한 예방 전략)

  • Jae-Gon Kim
    • Journal of the korean academy of Pediatric Dentistry
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    • v.50 no.2
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    • pp.131-141
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    • 2023
  • Dental caries is a multifactorial disease influenced by interactions between teeth, biofilm, dietary factors, and various biological, behavioral, sociocultural, and genetic factors. Recent research has shown that dental caries results from dysbiosis, an imbalance in the oral microbial community, shifting the concept from an infectious disease to a non-communicable disease (NCD). Dental caries shares similarities with other chronic NCDs such as cardiovascular diseases and diabetes, as they all relate to dietary intake, lifestyle habits, and environmental factors. Considering the high prevalence of dental caries and its impact on people's health and quality of life, it is important to understand dental caries as an NCD and develop effective oral health management strategies. Ecological prevention methods and efficient public health policies should be provided to reduce risk factors associated with dental caries.

Effect of Metal Interlayers on Nanocrystalline Diamond Coating over WC-Co Substrate (초경합금에 나노결정질 다이아몬드 코팅 시 금속 중간층의 효과)

  • Na, Bong-Kwon;Kang, Chan Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.46 no.2
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    • pp.68-74
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    • 2013
  • For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

Color Image Processing using Fuzzy Cluster Filters and Weighted Vector $\alpha$-trimmed Mean Filter (퍼지 클러스터 필터와 가중화 된 벡터 $\alpha$-trimmed 평균 필터를 이용한 칼라 영상처리)

  • 엄경배;이준환
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.24 no.9B
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    • pp.1731-1741
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    • 1999
  • Color images are often corrupted by the noise due to noisy sensors or channel transmission errors. Some filters such as vector media and vector $\alpha$-trimmed mean filter have bee used for color noise removal. In this paper, We propose the fuzzy cluster filters based on the possibilistic c-means clustering, because the possibilistic c-means clustering can get robust memberships in noisy environments. Also, we propose weighted vector $\alpha$-trimmed mean filter to improve the conventional vector $\alpha$-trimmed mean filter. In this filter, the central data are more weighted than the outlying data. In this paper, we implemented the color noise generator to evaluate the performance of the proposed filters in the color noise environments. The NCD measure and visual measure by human observer are used for evaluation the performance of the proposed filters. In the experiment, proposed fuzzy cluster filters in the sense of NCD measure gave the best performance over conventional filters in the mixed noise. Simulation results showed that proposed weighted vector $\alpha$-trimmed mean filters better than the conventional vector $\alpha$-trimmed mean filter in any kinds of noise.

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SAW Filter Made of ZnO/Nanocrystalline Diamond Thin Films (ZnO/나노결정다이아몬드 적층 박막 SAW 필터)

  • Jung, Doo-Young;Kang, Chan-Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.42 no.5
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    • pp.216-219
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    • 2009
  • A surface acoustic wave (SAW) filter structure was fabricated employing $4{\mu}m$ thick nanocrystalline diamond (NCD) and $2.2{\mu}m$ thick ZnO films on Si wafer. The NCD film was deposited in an $Ar/CH_4$ gas mixture by microwave plasma chemical vapor deposition method. The ZnO film was formed over the NCD film in an RF magnetron sputter using ZnO target and $Ar/O_2$ gas. On the top of the two layers, copper film was deposited by the RF sputter and inter digital transducer (IDT) electrode pattern (line/space : $1.5/1.5{\mu}m$) was defined by the photolithography including a lift-off etching process. The fabricated SAW filter exhibited the center frequency of 1.66 GHz and the phase velocity of 9,960 m/s, which demonstrated that a giga Hertz SAW filter can be realized by utilizing the nanocrystalline diamond thin film.

Ru and $RuO_2$ Thin Films Grown by Atomic Layer Deposition

  • Shin, Woong-Chul;Choi, Kyu-Jeong;Jung, Hyun-June;Yoon, Soon-Gil;Kim, Soo-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.149-149
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    • 2008
  • Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

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Ruthenium Thin Films Grown by Atomic Layer Deposition

  • Shin, Woong-Chul;Choi, Kyu-Jeong;Jung, Hyun-June;Yoon, Soon-Gil;Kim, Soo-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.12-12
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    • 2008
  • Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

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다이아몬드 기판을 이용한 온도 변화에 따른 질화 붕소 박막의 증착 거동

  • Lee, Eun-Suk;Park, Jong-Geuk;Lee, Uk-Seong;Baek, Yeong-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.44-44
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    • 2011
  • 현존하는 초경도 박막물질 중 입방정 질화붕소(cBN)은 철계 금속과의 반응안정성 및 낮은 온도에서의 합성가능성 등 많은 장점을 가지고 있다. 그러나 필수로 수반되는 이온충돌 효과로 인해 박막 내 높은 잔류응력으로 인한 박리 현상으로 응용이 어려운 실정에 있다. 현재까지 이를 개선하기 위해 수소를 첨가하여 박막의 잔류응력을 줄이는 연구, B4C 타겟을 이용하여 B-C-N 의 gradient layer를 설계하여 점진적으로 잔류응력을 감소시키는 연구 등 많은 연구들이 진행되고 있다. 본 연구에서는 MOCVD로 만들어진 NCD(Nano Crystalline Diamond) buffer layer 위에 RF-UBM(unbalanced magnetron) PVD를 이용하여 BN을 증착시켰다. hBN 타겟을 이용하여 2mTorr에서 400W 의 RF 파워를 사용하여 기판에 RF bias를 인가해 실험하였다. cBN 박막과 기판의 lattice mismatch 를 줄이기 위해서 본 연구소에서 제공되는 NCD 기판을 사용하였으며, 다이아몬드 기판과 cBN 박막의 1:1 에피성장을 이루기 위해 상온에서부터 800도까지 온도 변화를 주어 cBN을 증착시켰다. FTIR(Fourier transform infrared spectroscopy)로 $sp^2$구조인 hBN과 $sp^3$구조인 cBN의 성장유무를 확인하였으며, FTIR peak intensity 차이로 박막내 cBN의 함량을 계산하였고, Scratch test로 박막과 기판사이의 밀착력을 상대적으로 비교하였으며, 격자의 에픽성장을 확인하기 위해 FIB 의 작업을 거쳐 HRTEM 으로 각 위치별로 SAD pattern를 이용하여 성장거동을 확인하였다.

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A Study for Luminescence Properties of OLEDs Using $Alq_2-Ncd$ as an Emitting Layer ($Alq_2-Ncd$를 이용한 유기 전기 발광 소자의 발광특성에 관한 연구)

  • Yoon, Hee-Chan;Shin, Hoon-Kyu;Kim, Byoung-Sang;Kim, Chung-Kyun;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.518-521
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    • 2002
  • New luminescent material, 6,11-Dihydroxy-5,12-naphthacenedione$(Alq_2-Ncd)$ was synthesized. And extended efforts have been made to obtain high-performance electro-luminescent(EL) devices, since the first report of organic light-emitting diodes(OLEDs) based on tris-(8-hydroxy-quinoline)aluminum$(Alq_3)$ Current-voltage characteristics, brightness-voltage characteristics, luminous efficiency and quantum efficiency were measured at room temperature. The maximum wavelength of the EL is at around 504nm and the brightness is up to $2702[cd/m^2]$ with the maximum efficiency up to 3.91 [1m/W]. This study indicates not only the sterical effect but also some other effect would be responsible for the change of the emission wavelength.

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Characterization of Al-doped ZnO Thin Films by Atomic Layer Deposition (원자층 증착법으로 증착한 Al을 도핑한 ZnO 박막의 특성평가)

  • Shin, Woong-Chul;Choi, Kyu-Jeong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.175-175
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    • 2008
  • 투명전극으로 사용되고 있는 Indium tin oxide (ITO) 박막은 전기적 전도도와 기판과의 접확성, 화학적 안정성, 광투과율 등의 특성과 함께 우수한 전기 광학적 거동을 보이고 있다. 그러나 ITO는 고가의 재료이기 때문에 대체 투명전극으로 Al을 도핑한 ZnO 박막의 연구가 활발히 진행되고 있다. ZnO:Al 박막은 chemical vapor deposition, reactive magnetron sputtering, electron-beam evaporation, pulsed laser deposition 등의 당양한 방법을 이용하여 증착하였다. 그러나 최근 낮은 온도에서 대면적의 균일성과 우수한 특성 때문에 atomic layer depositon (ALD) 방법을 이용하여 많은 연구가 진행되고 있으며, 이런 투명전극은 태양전지를 위해 연구되어지고 있다. 따라서 본 연구에서는 ALD 방법으로 Al의 도핑 양을 조절하여, ZnO:Al 박막을 제조하여 그 특성을 평가하고, 또한 ZnO TFT를 제작하여 발표하고자 한다. ZnO와 ZnO:Al 박막은 실리콘과 유리 기판 위에 ALD (Lucida-D200, NCD Technology) 장치로 증착하였다. DEZn, TMA, $H_2O$는 ZnO와 ZnO:Al 박막을 증착하기 위한 전구체와 반응가스로 사용하였다. 증착된 박막은 XRD와 HRTEM을 이용하여 결정구조와 미세구조를 분석하였다. AFM과 4-point probe를 이용하여 증착된 박막의 표면 거칠기와 면저항을 관찰하였다. semiconductor parameter 분석기를 이용하여 제작된 ZnO TFT를 평가하였다.

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Characteristics of OLEDs Using $Alq_2-Ncd\;and\;Alq_2-Nq$ as Emitting Layer ($Alq_2-Ncd$$Alq_2-Nq$를 이용한 유기전기발광 소자의 특성)

  • Yang, Ki-Sung;Shin, Hoon-Kyu;Kim, Chung-Kyun;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.447-450
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    • 2003
  • In this paper, new luminescent material, 6,11-dihydoxy-5,12-naphtacene-dione Alq3 complex (Alq2-Ncd), 1,4-dihydoxy-5,8-naphtaquinone Alq3 complex(Alq2-Nq) was synthesized. And extended efforts had been made to obtain high-performance electroluminescent(EL) devices, since the first report of organic light-emitting diodes(OLEDS) based on tris-(8-hydroxyquinoline) aluminum(Alq3). We have performed investigate characterization of the materials. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured by Flat Panel Display Analysis System(Model 200-AT) at room temperature. An intensive research is going on to improve the device efficiency using the hole injection layer, different electrodes, and etc. By using the hole injection layer, the charge-injection can be controlled and the stability could be improved. This study indicates not only the sterical effect but also some other effects would be responsible for the change of the emission wavelength.

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