• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.2
• /
• pp.95-102
• /
• 2001

Nano-scale gate length MOSFET devices require extremely shallow source/drain eftension region with junction depth of 20∼30nm. In this work, 20nm $n^{+}$-p junctions that are realized by using this $As_{2}^{+}$ low energy ($\leq$10keV) implantation show the lower sheet resistance of the $1.0k\Omega$/$\square$ after rapid thermal annealing process. The $As_{2}^{+}$ implantation and RTA process make it possible to fabricate the nano-scale NMOSFET of gate length of 70nm. $As_{2}^{+}$ 5 keV NMOSFET shows a small threshold voltage roll-off of 60mV and a DIBL effect of 87.2mV at 100nm gate length devices. The electrical characteristics of the fabricated devices with the heavily doped and abrupt $n^{+}$-p junctions ($N_{D}$〉$10^{20}$$cm^{-3}$, $X_{j}$$\leq$20nm) suggest the feasibility of the nano-scale NMOSFET device fabrication using the $As_{2}^{+}$ low energy ion implantation.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1997.06a
• /
• pp.247-251
• /
• 1997

GaN films were grown on three differently oriented sapphire substates; (0001), (11-20), and (1-20). GaN films on the (0001) and (11-20) substates have a haxagonal structure and their growth rate was 0.6 $\mu\textrm{m}$/hr in both case. The film on the (1-102) substrate was too thin to identify its crystalline state. Growth rate was about the half of the others. Substrate orientation is one of the factor determining growth rate. The adhesion between GaN film and alumina substrate seems to be very good judging from the fractography.

• Korean Journal of Pharmacognosy
• /
• v.22 no.4
• /
• pp.219-224
• /
• 1991

Liver protective effects of ginsenosides as well as fractions of dammarane glycosides of Panax ginseng were studied using galactosamine (GalN)-induced cytotoxicity in primary cultured rat hepatocytes. Preventing effects on GalN-induced hepatotoxicity were found both microscopic observation and determination of GPT level with total dammarane glycosides fraction and $20(S)-ginsenoside-Rb_1$ as well as $20(S)-ginsenoside-Rg_1$ at the concentration of $50{\mu}g/ml$. The syntheses of both protein and RNA were significantly increased by the treatment of $50{\mu}g/ml$ of total dammarane glycoside fraction, $20(S)-ginsenoside-Rb_1$, -Rc, -Re and $-Rg_1$, respectively in both normal and GalN-induced cytotoxic hepatocytes.

• Current Optics and Photonics
• /
• v.2 no.5
• /
• pp.468-473
• /
• 2018

We investigate the temperature dependence of efficiency droop in InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) in the temperature range from 20 to $80^{\circ}C$. When the external quantum efficiency (EQE) and the wall-plug efficiency (WPE) of the LED sample were measured as injection current and temperature varied, the droop of EQE and WPE was found to be reduced with increasing temperature. As the temperature increased from 20 to $80^{\circ}C$, the droop ratio of EQE was decreased from 16% to 14%. This reduction in efficiency droop with temperature can be interpreted by a temperature-dependent carrier distribution in the MQWs. When the carrier distribution and radiative recombination rate in MQWs were simulated and compared for different temperatures, the carrier distribution was found to become increasingly homogeneous as the temperature increased, which is believed to partly contribute to the reduction in efficiency droop with increasing temperature.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.33 no.3
• /
• pp.222-228
• /
• 1988

This experiment was carried out to investigate the effects of N levels (0,10,20,30kg/10a) and N split rates [the rates of basal＋top dressing 15 days after transplanting (DAT) : top dressing 25 days before heading (DBH) was 100 : 0, 80 : 20, 60 : 40 ] on the growth, yield, yield components, and N uptake of Seomjinbyeo (J) and Samgangbyeo (I${\times}$J). The maximum tillering stage occurred in the middle of July in both varieties, but Samgangbyeo showed the second maximum tillering stage in the middle of August probably due to the retarded early growth caused by low temperature in the tillering stage and to favoring temperature in August. Grain yield of Seomjinbyeo was similar among the N levels from 10 to 30 kg/10a without occurrence of rice blast and lodging, but that of Samgangbyeo increased as N level increased upto 30 kg/10a. Grain yield of Seomjinbyeo was higher when N was applied three times (basal and two top dressings 15 DAT and 25 DBH) compared with two times (basal and top dressing 15 DAT), but that of Samgangbyeo was not different among the N split rates. Total N uptake and the proportion of fertilizer N to the total N uptake increased as N level was higher. N uptake tended to be higher as proportion of basal＋top dressing 15 DAT increased in early growth stage, but it was higher as proportion of N applied 25 DBH increased in the late growth stage. The N efficiency to produce grain per absorbed N unit decreased as N level decreased in Seomjinbyeo, but similar in Samgangbyeo.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.367-367
• /
• 2008

Aluminum nitride (AlN) thin films have been deposited on Si substrate by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different $N_2$ concentration. It was found that $N_2$ concentration was varied in the range up to 20-100%, highly c-axis oriented film can be obtained at 50% $N_2$ with full width at half maximum (FWHM) $4.5^{\circ}$. Decrease in surface roughness from 7.5 nm to 4.6 nm found to be associated with decrease in grain size, with $N_2$ concentration; however, the AlN film fabricated at 20% $N_2$ exhibited a granular type of structure with non-uniform grains. The absorption peak was observed around 675 $cm^{-1}$ in fourier transform infrared spectroscopy (FTIR). It is concluded that the AlN film deposited at $N_2$ concentration of 50% exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.7
• /
• pp.134-142
• /
• 1996

The epi-CoSi$_{2}$ layer was formed by alloying a Co(120$\AA$)/Ti(50$\AA$) bilayer. In addition, the ultra shallow p$^{+}$n junction of which depth is about not more than 40nm at the background concentration, 10$^{18}$atoms/cm$^{3}$ could be formed by annealing (RTA-II) the ion implanted epi-silicide. When the temperature of RTA-I is as low as possible and that of RTA-II is moderate, the p$^{+}$n junction that has low leakage current and stable epi-silicide layer could be obtained. That is, when th econdition of TRA-I was 900$^{\circ}C$/20sec and that of RTA-II was 900$^{\circ}C$/10sec, the reverse leakage current was as high as 11.3$\mu$A/cm$^{2}$ at -5V. The surface of CoSi$_{2}$ appeared considerably rough. However, when the conditon of RTA-I was 800$^{\circ}C$/20sec or 700$^{\circ}C$/20sec, the leakage currents were as low as 8.3nA/cm$^{2}$ and 9.3nA/cm$^{2}$, respectively and also the surfaces appeared very uniform.

• Korean Journal of Plant Tissue Culture
• /
• v.28 no.2
• /
• pp.113-116
• /
• 2001

Chromosomal variation was investigated in the female and male somaclones regenerated from the leaf segment culture of Rumex acetosa L. Difference in phenotype depending on the sexuality was not observed. In female somaclones, 21 among 25 somaclones carried the same chromosome complements (2n＝14) with wildtype and others were tetraploids (2n=28), Considerable chromosomal variation was found in male somaclones. Only 4 among 20 somaclones carried normal chromosome number (2n=15) and 13 somaclones were aneuploids.

• BMB Reports
• /
• v.32 no.1
• /
• pp.33-38
• /
• 1999

The effects of eicosapentaenoic (EPA, 20:5n-3) and docosahexaenoic acids (DHA, 22:6n-3) on the phospholipase $A_2$ ($PLA_2$)-mediated release of arachidonic acid (AA, 20:4n-6) were studied in kidney microsomes from rats fed diets containing sunflower oil (SO) or fish oil (FO) concentrate for 11 months. The amounts of AA released by the endogenous $PLA_2$ enzyme were significantly lower by 38% in the FO, compared to the SO-fed rats (23.2 nmol versus 60.7 nmol AA released/mg protein/h in the FO- and SO-treated groups, respectively). The FO-derived microsomes released less linoleic acid (LA, 18:2n-6) and adrenic acid (22:4n-6), but larger amounts of the n-3 fatty acids, including EPA, DHA, docosapentaenoic acid (DPA, 22:5n-3), and 20:4n-3 than the SO-derived microsomes. A similar replacement of the AA and adrenic acid with the n-3 fatty acids including EPA and DHA was also observed in the microsomal phospholipid fraction from the FO-fed rats relative to the SO-treated group. The results suggest that the $PLA_2$-mediated release of AA is reduced and that of EPA is increased in compensation for AA decline in kidney microsomes from FO-fed rats (0.7 nmol EPA/mg protein/h versus 22.7 nmol EPA/mg protein/h for the SO and FO-treated groups). Replacement of the n-6 with n-3 fatty acids may explain the reduced synthesis of the AA-derived prostaglandins and the concomitant rise in the EPA-derived prostaglandins observed in kidneys of FO-treated rats.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.1
• /
• pp.44-49
• /
• 2016

Studies on a $SF_6$-mixture and -alternative gas has been in progress to reduce the use of $SF_6$ gas as an insulation material of GIS (gas insulated switchgears). In this paper, we dealt with PD (partial discharge) characteristics in pure $SF_6$ and $N_2$, and their mixtures on aspects of insulation design and risk assessment for GIS. A POC (protrusion on conductor) and a POE (protrusion on enclosure) as the major defects were fabricated to simulate PD. We analyzed the DIV (discharge inception voltage), DEV (discharge extinction voltage), pulse magnitude, counts and phase distribution of PD pulse in $SF_6-N_2$ mixtures ($SF_6$ 100%, $SF_6$ 80%-$N_2$ 20%, $SF_6$ 50%-$N_2$ 50%, $SF_6$ 20%-$N_2$ 80%, and $N_2$ 100%) according to the IEC60270. The DIV, DEV as well as magnitude of PD pulse decreased on the POC as increase of $N_2$ ratio. For the POE, the DIV and DEV in $N_2$ ratio below 50% were the same voltages as those in $SF_6$ 100%. In this experiment, $SF_6$ 80%-$N_2$ 20% mixture could be considered with the equivalent insulation performance to a GIS.