• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.881-886
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• 2010

A novel Schiff base N-(2,4-dinitro-phenyl)-N'-(1-phenyl-ethylidene)-hydrazine has been synthesized and structurally characterized by X-ray single crystal diffraction, elemental analysis, IR spectra and UV-vis spectrum. The crystal belongs to monoclinic with space group P21/n. The molecules are connected via intermolecular O-$H{\cdots}O$ hydrogen bonds into 1D infinite chains. The crystal structure is consolidated by the intramolecular N-$H{\cdots}O$ hydrogen bonds. weak intermolecular C-$H{\cdots}O$ hydrogen bonds link the molecules into intriguing 3D framework. Furthermore, Density functional theory (DFT) calculations of the structure, stabilities, orbital energies, composition characteristics of some frontier molecular orbitals and Mulliken charge distributions of the title compound were performed by means of Gaussian 03W package and taking B3LYP/6-31G(d) basis set. The time-dependent DFT calculations have been employed to calculate the electronic spectrum of the title compound, and the UV-vis spectra has been discussed on this basis. The results show that DFT method at B3LYP/6-31G(d) level can well reproduce the structure of the title compound.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.245-250
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• 1996

$Y_2O_3$ thin film on si(100) was successfully grown by ionized cluster beam(ICBD) technique at substrate temperature of around $500^{\circ}C$ and pressure of ~$10^{-5}$Torr.To prevent the oxidation of Si substrae, a very thin yttrium layer was deposited on Si before reactive depositing of oxygen and yttrium source. In asdeposited stage, b.c.c and h.c.p strucutres of $Y_2O_3$ were observed from S-ary analysis. From the observation of spots and ring patterns in selected area diffractin(SAD) patterns. crystallane formation and growth could be proceeded during the deposition. $Y_2O_3$/mixed layer/$SiO_2=170\AA/50\AA/10\AA$ structure were verified by high resolution transmition electron imcroscopy(HRTEM) image, and the formation of amorphous layer of SiO2 was discussed . Electricla charateristics of the film were also investigated . In as-deposited Pt/$Y_2O_3$/Si sturcuture, leakage current was less than $10^{-6}$A/$\textrm{cm}^2$ at 7MV/cm strength.

• Bulletin of the Korean Chemical Society
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• v.25 no.11
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• pp.1635-1640
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• 2004

The cyclophanes 1a-d containing two benzo[b]furan rings connected by various bridges have been prepared and their binding behaviors with N-benzylphenethylammonium cation 2 were examined by NMR titration method. The successive alkylation reactions of 4-hydroxyl groups and then 2-hydroxyl groups of 2,4-dihydroxybenzophenonse gave macrocycles 5a-c. Photoirradiation of the macrocycles 5a-c with 350 nm mercury lamp followed by dehydration afforded the cyclophanes 1a-c. Hydrolysis of two ester groups pendant on a bridge of 1b produced the carboxyl group-containing cyclophane 1d. The cyclophane 1a having a p-xylene bridge showed 1 : 1 binding with 2 with the binding constant of $36{\pm}6M^{-1}$ in 3 : 1 $CDCl_3$/methanol-$d_4$ solvent, while 1b and 1c which have neutral flexible bridges exhibited no appreciable binding with 2. The disodium salt of 1d showed much higher binding affinity for 2 forming 1 : 1 and 1 : 2 complexes.

• Proceedings of the Korean Nuclear Society Conference
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• 2004.10a
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• pp.757-758
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• 2004

• Journal of applied mathematics & informatics
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• v.18 no.1_2
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• pp.159-169
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• 2005

An algorithmic approach to degree reduction of rational Bezier curves is presented. The algorithms are based on the degree reduction of polynomial Bezier curves. The method is introduced with the following steps: (a) convert the rational Bezier curve to polynomial Bezier curve by using homogenous coordinates, (b) reduce the degree of polynomial Bezier curve, (c) determine weights of degree reduced curve, (d) convert the Bezier curve obtained through step (b) to rational Bezier curve with weights in step (c).

• Proceedings of the Korean Society of Crop Science Conference
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• 1988.02a
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• pp.50-51
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• 1988

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.966-970
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• 2006

We reported on characteristics of the piezoelectric ceramic-polymer composite for the application of the thick-film speaker. The PVDF-PZT composites were fabricated to incorporate the advantages of both ceramic and polymer with various mixing ratios by 3-roll mill mixer. The composite solutions were coated by the conventional screen-printing method on ITO electrode coated PET (Polyethylene terephthalate) polymer film. After depositing the top-electrode of silver-paste, 4 kV/mm of DC field was applied at $120^{\circ}C$ for 30 min to poling the composite films. The value of $d_{33}$ (piezoelectric charge constant) was increased when the PZT weight percent was increased. The maximum value of the $d_{33}$ was 24 pC/N at 70 wt% PZT. But the $g{33}$ (piezoelectric voltage constant) showed the maximum value of $32mV{\cdot}m/N$ at 65 wt% of PZT powder. The SPL (sound pressure level) of the speaker fabricated with the 65:35 composite film was about 68 dB at 1 kHz.

• Journal of Ocean Engineering and Technology
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• v.20 no.6 s.73
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• pp.88-92
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• 2006

Large-scale model tests of welded topside joints were carried out to observe the fatigue behavior of API 2W Gr.50 steel produced by POSCO. The fatigue crack behaviors for various loading conditions were measured and investigated around the critical joint sections. The experimental results have been verified with numerical approaches and also compared with the AWS D1.1 and DnV RP-C203 design curves. The large-scale experiment models were fabricated, based on the actual operating east area fixed platform. The dimensions of the models were slightly modified to accommodate the test facilities and capacities. The fatigue test was carried out having ${\Delta}Q$ of T1=705.6kN, T2=749.7kN and T3=793.8kN. The three specimens were statically loaded 20 times, with various loadings of about 50kN intervalsbetween the maximum and minimum loads required in the fatigue tests. This loading removed the residual stress in the specimen before the fatigue tests. The topside joint crack was initiated from the brace heel, where the maximum tensile stress occurred. The API 2W Gr.50 steel satisfied the AWS D1.1 detail category C and DnV RP-C203 detail category F ${\Delta}S-N$ curve.

• Journal of IKEEE
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• v.26 no.4
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• pp.553-559
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• 2022

In this paper, RC snubber circuit design technology for oscillation suppression in half-bridge configuration of cascode gallium nitride (GaN) field effect transistors (FETs) is analyzed. A typical wide band-gap (WBG) device, cascode GaN FET, has excellent high-speed switching characteristics. However, due to such high-speed switching characteristics, a false turn-off problem is caused, and an RC snubber circuit is essential to suppress this. In this paper, the commonly used experimental-based RC snubber design technique and the RC snubber design technique using the root locus method are compared and analyzed. In the general method, continuous circuit changes are required until the oscillation suppression performance requirement is met based on experimental experience . However, in root locus method, the initial value can be set based on the non-oscillation R-C map. To compare the performance of the two aforementioned design methods, a simulation experiment and a switching experiment using an actual double pulse circuit are performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.