• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.9
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• pp.536-542
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• 2018

Tin dioxide, $SnO_2$, is a well-known n-type semiconductor that shows change in resistance in the presence of gas molecules, such as $H_2$, CO, and $CO_2$. Considerable research has been done on $SnO_2$ semiconductors for gas sensor applications due to their noble property. The nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in the sensing of gas molecules. In this study, SnO nanoplatelets were grown densely on Si substrates using a thermal CVD process. The SnO nanostructures grown by the vapor transport method were post annealed to a $SnO_2$ phase by thermal CVD in an oxygen atmosphere at $830^{\circ}C$ and $1030^{\circ}C$. The pressure of the furnace chamber was maintained at 4.2 Torr. The crystallographic properties of the post-annealed SnO nanostructures were investigated by Raman spectroscopy and XRD. The change in morphology was confirmed by scanning electron microscopy. As a result, the SnO nanostructures were transformed to a $SnO_2$ phase by a post-annealing process.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.81-88
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• 1997

Vanadate glasses using $B_2O_3$ as a network former and with CuO additive were mainly investigated in relation to electrical properties. Crystalline phases formed by heat-treatment in each composition were examined and dc electrical conductivity changes of the glasses were analyzed. Crystalline phases were identified as $V_3O_5,\;a-CuV_2O_6\;and\;{\beta}-CuV_2O_6$ by XRD analysis. Crystallization degrees of $V_2O_5$ and ${\beta}-CuV_2O_6$ were little changed with heat-treatment time, but those of ${\alpha}u-CuV_2O_6$ were changed sharply with heat-treatment time. The more crystallization of ${\alpha}u-CuV_2O_6$ occurred, the higher electrical conductivity was observed. Electrical conductivities with $10^{-2}~10^{-4}/{\Omega}/cm$ at room temperature(303K) could be obtained by controlling the glass compositions. The electrical conductivities were increased with increasing of $V_20_5$ content and decreasing of alkality($CuO/B_2O_3$). In this study, electron was proved to be charge carrier by seebeck coefficient measurement. Accordingly, the glasses are believed to be n-type semiconductor. Calculated activation energies for the conduction were in the range 0.098-0.124 eV. Electrical conduction mechanism was small polaron hopping without showing variable range hopping in the temperature range $30~200^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.14-18
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• 2019

The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.90.1-90.1
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• 2010

Due to the rapidly diminishing energy sources and higher energy production cost, the interest in dye-sensitized solar cells (DSSCs) has been increasing dramatically in recent years. A typical DSSC is constructed of wide band gap semiconductor electrode such as $TiO_2$ or ZnO that are anchored by light-harvesting sensitizer dyes and surrounded by a liquid electrolyte with a iodide ion/triiodide ion redox couple. DSSCs based on one-dimensional nano-structures, such as ZnO nanorods, have been recently attracting increasing attention due to their excellent electrical conductivity, high optical transmittance, diverse and abundant configurations, direct band gap, absence of toxicity, large exiton binding energy, etc. However, solar-to-electrical conversion performances of DSSCs composed of ZnO n-type photo electrode compared with that of $TiO_2$ are not satisfactory. An important reason for the low photovoltaic performance is the dissolution of $Zn^{2+}$ by the adsorption of acidic dye followed by the formation of agglomerates with dye molecules which could block the I-diffusion pathway into the dye molecule on the ZnO surface. In this paper, we prepared the DSSC with the ZnO electrode using the chemical bath deposition (CBD) method under low temperature condition (< $100^{\circ}C$). It was demonstrated that the ZnO seed layers played an important role on the formation of the ZnO nanostructures using CBD. To achieve truly low-temperature growth of the ZnO nanostructures on the substrates, a two-step method was developed and optimized in the present work. Firstly, ZnO seed layer was prepared on the FTO substrate through the spin-coating method. Secondly, the deposited ZnO seed substrate was immersed into an aqueous solution of 0.25M zinc nitrate hexahydrate and 0.25M hexamethylenetetramine at $90^{\circ}C$ for hydrothermal reaction several times.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.230-238
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• 2017

We have proposed an InGaAs-based gate-all-around (GAA) tunneling field-effect transistor (TFET) with a stacked dual-metal gate (DMG). The electrical performances of the proposed TFET are evaluated through technology computer-aided design (TCAD) simulations. The simulation results show that the proposed TFET demonstrates improved DC performances including high on-state current ($I_{on}$) and steep subthreshold swing (S), in comparison with a single-metal gate (SMG) TFET with higher gate metal workfunction, as it has a thinner source-channel tunneling barrier width by low workfunction of source-side channel gate. The effects of the gate workfunction on $I_{on}$, the off-state current ($I_{off}$), and S in the DMG-TFETs are examined. The DMG-TFETs with PNPN structure demonstrate outstanding DC performances and RF characteristics with a higher n-type doping concentration in the $In_{0.8}Ga_{0.2}As$ source-side channel region.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.400-405
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• 2016

Ferric oxide (${\alpha}-Fe_2O_3$, hematite) is an n-type semiconductor; due to its narrow band gap ($E_g=2.1eV$), it is a highly attractive and desirable material for use in solar hydrogenation by water oxidation. However, the actual conversion efficiency achieved with $Fe_2O_3$ is considerably lower than the theoretical values because the considerably short diffusion length (2-4 nm) of holes in $Fe_2O_3$ induces excessive charge recombination and low absorption. This is a significant hurdle that must be overcome in order to obtain high solar-to-hydrogen conversion efficiency. In consideration of this, it is thought that elemental doping, which may make it possible to enhance the charge transfer at the interface, will have a marked effect in terms of improving the photoactivities of ${\alpha}-Fe_2O_3$ photoanodes. Herein, we report on the synthesis by pulsed electrodeposition of ${\alpha}-Fe_2O_3$-based anodes; we also report on the resulting photoelectrochemical (PEC) properties. We attempted Ti-doping to enhance the PEC properties of ${\alpha}-Fe_2O_3$ anodes. It is revealed that the photocurrent density of a bare ${\alpha}-Fe_2O_3$ anode can be dramatically changed by controlling the condition of the electrodeposition and the concentration of $TiCl_3$. Under optimum conditions, a modified ${\alpha}-Fe_2O_3$ anode exhibits a maximum photocurrent density of $0.4mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE) under 1.5 G simulated sunlight illumination; this photocurrent density value is about 3 times greater than that of unmodified ${\alpha}-Fe_2O_3$ anodes.