• Title/Summary/Keyword: N-transform

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Investigation of Oxidation of Silicon Nanoparticles Capped with Butyl and Benzophenone against Its Stabilization (Benzophenone과 알킬 그룹으로 Capping된 실리콘 나노입자의 안정성에 대한 산화 연구)

  • Jang, Seunghyun
    • Journal of Integrative Natural Science
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    • v.3 no.3
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    • pp.133-137
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    • 2010
  • New synthetic route and characterization of alkyl-capped nanocrystalline silicon (R-n-Si) were achieved from the reaction of silicon tetrachloride with sodium/benzophenone ketal reducing agent followed by n-butyllithium. Surface of silicon nanoparticles was derivatized with butyl group. Effect of oxidation of silicon nanoparticle with benzophenone was investigated for their stabilization. Optical characteristics of silicon nanoparticles were characterized by fourier transform infrared spectroscopy (FT-IR), ultraviolet-visible spectroscopy (UV-vis), and photoluminescence (PL) spectroscopy. Butyl-capped silicon nanoparticles exhibited an emission band at 410 nm with excitation wavelength of 360 nm. Average size of n-butyl-capped silicon nanoparticles was obtained by particle size analyzer (PSA) and transmission electron microscopy (TEM). Average size of n-butyl-capped Si nanoparticles was about 6.5 nm.

Field Emission Characteristics of Nitrogen-Doped and Micro-Patterned Diamond-Like Carbon Films Prepared by Pulsed Laser Deposition

  • Shin, Ik-Ho;Lee, Taek-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.133-134
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    • 2000
  • Effect of nitrogen doping on field emission characteristics of patterned Diamond-like Carbon (DLC) films was studied. The patterned DLC films were fabricated by the method reported previously[1]. Nitrogen doping in DLC film was carried out by introducing $N_2$ gas into the vacuum chamber during deposition. Higher emission current density of $0.3{\sim}0.4$ $mA/cm^2$ was observed for the films with 6 at % N than the undoped films but the emission current density decreased with further increase of N contents. Some changes in CN bonding characteristics with increasing N contents were observed. The CN bonding characteristics which seem to affect the electron emission properties of these films were studied by Raman spectroscopy, x-ray photoemission spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR). The electrical resistivity and the optical band gap measurements showed consistence with the above analyses.

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Generalized Binary Bent Sequences (일반화된 이진 Bent 시퀀스)

  • Gil, Gang-Mi;No, Jong-Seon;Shin, Dong-Joon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.1A
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    • pp.35-41
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    • 2002
  • In this paper, we generalize the family of binary bent sequences introduced by Olsen, Scholtz and Welch [2] to obtain the generalized binary bent sequences with optimal correlation and balance properties. The modified trace transform is introduced and it enables us to use linear function from ${F_{2^n}}$ to the intermediate field ${F_{2^e}}$, where e|n. If we choose e=1, our method becomes the conventional binary bent sequence case. Also, some examples are given which show that our construction gives the family of simple binary sequences with optimal correlation and balance properties.

Synthesis of N-doped Ethylcyclohexane Plasma Polymer Thin Films with Controlled Ammonia Flow Rate by PECVD Method

  • Seo, Hyunjin;Cho, Sang-Jin;Boo, Jin-Hyo
    • Applied Science and Convergence Technology
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    • v.23 no.1
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    • pp.44-47
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    • 2014
  • In this study, we investigated the basic properties of N-doped ethylcyclohexene plasma polymer thin films that deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) method with controlled ammonia flow rate. Ethylcyclohexene was used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia ($NH_3$) gas was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, UV-Visible spectroscopy, and water contact angle measurement. We found that with increasing plasma power, film thickness is gradually increased while optical transmittance is drastically decreased. However, under the same plasma condition, water contact angle is decreased with increasing $NH_3$ flow rate. The FT-IR spectra showed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

Investigate Electronic Property of N-doped Plasma-Polymer Thin Films for Applied Biosensors

  • Seo, Hyeon-Jin;Hwang, Gi-Hwan;Nam, Sang-Hun;Ju, Dong-U;Lee, Jin-Su;Yu, Jeong-Hun;Bu, Jin-Hyo;Yun, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.159-159
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    • 2013
  • In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.

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Memory Reduction of IFFT Using Combined Integer Mapping for OFDM Transmitters (CIM(Combined Integer Mapping)을 이용한 OFDM 송신기의 IFFT 메모리 감소)

  • Lee, Jae-Kyung;Jang, In-Gul;Chung, Jin-Gyun;Lee, Chul-Dong
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.10
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    • pp.36-42
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    • 2010
  • FFT(Fast Fourier Transform) processor is one of the key components in the implementation of OFDM systems for many wireless standards such as IEEE 802.22. To improve the performances of FFT processors, various studies have been carried out to reduce the complexities of multipliers, memory interface, control schemes and so on. While the number of FFT stages increases logarithmically $log_2N$) as the FFT point-size (N) increases, the number of required registers (or, memories) increases linearly. In large point-size FFT designs, the registers occupy more than 70% of the chip area. In this paper, to reduce the memory size of IFFT for OFDM transmitters, we propose a new IFFT design method based on a combined mapping of modulated data, pilot and null signals. The proposed method focuses on reducing the sizes of the registers in the first two stages of the IFFT architectures since the first two stages require 75% of the total registers. By simulations of 2048-point IFFT design for cognitive radio systems, it is shown that the proposed IFFT design method achieves more than 38.5% area reduction compared with previous IFFT designs.

EEG Study for the Effects of Mouth Breathing on Brain Functions (구강 호흡이 뇌기능에 미치는 영향에 관한 EEG 연구)

  • Lee, Kyung-Jin;Lee, Song-Yi;Park, So-Young;Jang, So-Ra;Kang, Chang-Ki
    • Science of Emotion and Sensibility
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    • v.19 no.4
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    • pp.119-126
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    • 2016
  • In this study, we investigated the effects of mouth breathing on brain activity through electroencephalogram (EEG). EEG was performed on 12 healthy volunteers of age ranging from 21 to 27 years (male: female = 6:6, non-smoker). Brain waves on resting state (Rest_N/Rest_M) and auditory-language stimuli state (Eng_N/Eng_M) were recorded during mouth and nose breathing. Four different regions (R1~R4) were classified based on the brain functionality. And each channel (e.g., Pf1 and Pf2) and frequency (${\alpha}$, ${\beta}$, ${\gamma}$, and ${\theta}$) were analyzed using their absolute power ratios of fast Fourier transform (FFT). The results showed that there was no significant difference between Rest_N and Rest_M. Eng_N had significantly higher brain activity than Rest_N; on the other hand, there was no significant difference between Rest_M and Eng_M. These results demonstrate that mouth-breathing on resting state does not induce any significant effects on brain activity and/or functionality, even though it causes subtle temporary inconvenience. In addition to the uncomfort, the brain activity can be adversely influenced by mouth-breathing, which could lower the cognitive skills under certain circumstances.

Discrete Wavelet Transform-based Screening Process for a Li-Ion Battery (이산 웨이블릿 변환(DWT)를 이용한 리튬 이온 배터리 스크리닝 방법)

  • Kim, J.H;Chun, C.Y.;Hur, I.N.;Cho, B.H.;Lee, S.J.
    • Proceedings of the KIPE Conference
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    • 2011.11a
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    • pp.299-300
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    • 2011
  • 상이한 전기화학적 특성을 가진 단위 셀들을 미리 선별하여 팩의 안전한 운용 및 배터리 관리 시스템의 성능 향상을 위해 스크리닝(screening)은 필수적이다. 그러므로, 본 논문에서는 이산 웨이블릿 변환(DWT;discrete wavelet transform)을 이용한 리튬 이온 배터리 스크리닝 방법을 제안한다. 제안된 방식은 축소된 하이브리드 자동차용 전류프로파일을 통해 얻어진 충방전 전압을 이산 웨이블릿 변환에 적용하여 저주파 전압 성분과 고주파 전압 성분으로 분리하고, 각 단계별로 얻어진 성분들의 통계처리를 실시하여 스크리닝을 구현한다. 특히, 마지막 단계에서의 저주파 전압 성분과 고주파 전압 성분은 배터리의 State-of-health(SOH)를 예측하기 위한 성분으로 정의된다.

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An Improved LMI-Based Intelligent Digital Redesign Using Compensated Bilinear Transform (보상된 bilinear 변환을 이용한 향상된 LMI 기반 지능형 디지털 재설계)

  • Kim, Do-Wan;Joo, Young-Hoon;Park, Jin-Bae
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2005.11a
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    • pp.91-94
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    • 2005
  • This paper presents a new linear- matrix- inequality- basedintelligent digital redesign (LMI-based IDR) technique to match he states of the analog and the digital control systems at the intersampling instants as well as the sampling ones. The main features of the proposed technique are: 1) the multirate control is employed, and the control input is changed N times during one sampling period; 2) The proposed IDR technique is based on the compensated bilinear transformation.

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A design of the Fast Measuring Instrument for Harmonic Signal using New Fast Walsh Transform (새로운 고속월쉬 변환을 이용한 고속의 고조파 신호 측정기 설계)

  • Lim, Yun-Sik;Yoo, Young-Sik
    • Proceedings of the KIEE Conference
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    • 2007.11c
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    • pp.141-145
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    • 2007
  • Using the New Fast Walsh Transform algorithm, we present a new algorithm which reduces the computational amount, and it can consequently calculate the real and imaginary components for current and voltage signals of power system in sampling intervals. The calculation amount is reduced to 2X(m-1) at m samples to measure full harmonics using developed algorithm. When in single harmonic measuring, it needs only 2(log2N-1)+1 additions and subtractions. We developed hardware device for testing, and tested the developed algorithm by measuring real and imaginary components.

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