• Journal of Communications and Networks
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• v.17 no.5
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• pp.463-472
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• 2015

This paper considers a limited feedback system for two-way wireless relaying channels with physical network coding (PNC). For full feedback systems, the optimal structure with the PNC has already been studied where a modulo operation is employed. In this case, phase and power of two end node channels are adjusted to maximize the minimum distance. Based on this result, we design new quantization methods for the phase and the power in the limited feedback system. By investigating the minimum distance of the received constellation, we present a code-book design to maximize the worst minimum distance. Especially, for quantization of the power for 16-QAM, a new power quantization scheme is proposed to maximize the performance. Also, utilizing the characteristics of the minimum distance observed in our codebook design, we present a power allocation method which does not require any feedback information. Simulation results confirm that our proposed scheme outperforms conventional systems with reduced complexity.

• ALGAE
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• v.28 no.1
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• pp.73-82
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• 2013

The genus Neosiphonia Kim and Lee 1999 contains approximately 30 species worldwide. Unidentified samples from Peru are here described as a new species, Neosiphonia ramirezii sp. nov., on the basis of morphological and molecular data. N. ramirezii sp. nov. is characterized by the presence of a limited prostrate system, well-developed erect filaments, rhizoids cut off from pericentral cells by cross walls, four pericentral cells that are completely ecorticate, scarce trichoblasts, inconspicuous scar cells, procarps with three-celled carpogonial branches, spermatangial branches developed from basal cells of forked trichoblasts, and spirally arranged tetrasporangia. Our new species is distinct from N. flaccidissima (Hollenberg) Kim et Lee, N. sphaerocarpa (Borgesen) Kim et Lee, and N. savatieri (Hariot) Kim et Lee from the Pacific temperate coast of South America and from 14 Neosiphonia species reported worldwide by having limited prostrate filaments attached by numerous rhizoids, dichotomous ("Y" shaped) branches in the main axes, and scarce trichoblasts. Phylogenetic rbcL analyses confirm the placement of the new taxon as a distinct species in the genus Neosiphonia.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.549-554
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• 2009

Al thin films were synthesized on TiN/Si substrate by MOCVD using N-methylpyrrolidine alane (MPA) precursor. Effects of substrate temperature, reaction pressure on the deposition rate, surface roughness and electrical resistivity were investigated. The early stage of Al thin film formation was analyzed by in-situ surface reflectivity measurement with a laser and photometer apparatus. From the Arrhenius plot of deposition rate vs. substrate temperature, it was found that the activation energy of surface reaction was 91.1kJ/mole, and the transition temperature from surface-reaction-limited region to mass-transfer-limited region was about $150^{\circ}C$. The growth rate increased with the reaction pressure, and average growth rates of $200{\sim}1,200nm/min$ were observed at various experimental conditions. Surface roughness of the film increased with the film thickness. The electrical resistivity of Al film was about $4{\mu}{\Omega}{\cdot}cm$ in the case of optimum condition, and it was close to the value of the bulk Al, $2.7{\mu}{\Omega}{\cdot}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.114-117
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• 2002

We have studied the dependence of current-voltage characteristics of Organic Light Emitting Diodes(OLEDs) on temperature-dependent variation. The OLEDs have been based on the molecular compounds. N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'- biphenyl-4, 4'-diamine (TPD) as a hole transport. tris(8-hydroxyquinolinoline) aluminum (III) ($Alq_3$) as an electron transport and Poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) as a buffer layer. The current-voltage characteristics were measured in the temperature range of 10K and 300K. A conduction mechanism in OLEDs has been interpreted in terms of space-charge-limited current(SCLC) and tunneling region.Ā᐀會Ā᐀衅?⨀頱岒ᄀĀ저會Ā저?⨀⡌ឫഀĀ᐀會Ā᐀㡆?⨀쁌ឫഀĀ᐀會Ā᐀遆?⨀郞ග瀀ꀏ會Ā?⨀〲岒ऀĀ᐀會Ā᐀䁇?⨀젲岒Ā㰀會Ā㰀顇?⨀끩Ā㈀會Ā㈀?⨀䡪ഀĀ᐀會Ā᐀䡈?⨀Ā᐀會Ā᐀ꁈ?⨀硫Ā저會Ā저?⨀샟ගऀĀ저會Ā저偉?⨀栰岒ഀĀ저會Ā저ꡉ?⨀1岒ഀĀ저會Ā저J?⨀惝ග؀Ā؀會Ā؀塊?⨀ග䈀Ā切

• Korean Journal Plant Pathology
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• v.14 no.3
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• pp.229-239
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• 1998

Antibodies were raised against fusion proteins of the N-terminus and a region containing the GDNQ (Gly-Asp-Asn-Gln) polymerase motif of the L (polymerase) protein of sonchus yellow net virus (SYNV). Immunoblot analyses using these antibodies revealed the presence of the L protein in purified SYNV preparations and in nuclear extracts from infected tobacco. The serological analyses and detection in a polyacrylamide gels suggested that the L protein is present in at least a 20 fold lower abundance than the G, N, M1 and M2 proteins, and has size corresponding to a molecular weight of over 200 kDa as predicted from nucleotide sequence data. Electron microscopy with gold-labelled antibodies was used to localize the N, M2, and G proteins of SYNV in thin sections of infected tissue. When sections of SYNV-infected tissue were treated with antisera against total SYNV proteins and N protein, gold label could be detected in both the viroplasms and in virus particles. With the anti-M2 protein antiserum, the gold label was strongly localized in the viroplasms but only limited labelling of the virus particle sonly. Limited labelling of the L protein was observed in the viroplasms and the virus particles, presumably because of the low abundance of L protein in the tissues.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.582-588
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• 1999

정보화 사회의 발전과 함께 멀티미디어에 대한 관심이 집중되고 있으며, 점유 공간이 작고 가벼우며 대면적이 가능한 정보 표시 디스플레이에 대한 기술은 고부가가치 산업으로 인식되어 지고 있다. 이러한 정보 표시 디스플레이들 중, 전기 발광 소자 (Electroluminescence Display : ELD), 액정 표시 디스플레이 (Liquid Crystal Display LCD), 플라즈마 디스플레이 (Plasma Display Panel) 등의 대한 연구가 세계적으로 매우 활발하게 진행되고 있다. 본 연구에서는 란탄 계열의 금속 착 화합물인 Tb(ACAC)$_3$(Phen)과 Tb(ACAC)$_3$(Phen-Cl)를 이용해 다비이스를 제작한후 광학적 및 전기적 특성을 조사하였다. 또한 luminous efficiency와 cyclic voltametric 방법을 이용해 에너지 밴드로 두 발광 물질인 Tb(ACAC)$_3$(Phen)과 Tb(ACAC)$_3$(Phen-Cl)을 비교.분석하였다. 본 연구의 디바이스 구조를 보면 anode/hole transporting layer (HTL)/emitting material layer (EML)/electron transporting layer (ETL)/cathode와 같고 ETL를 aluminum-tris- (8-hydroxyquinoline) (Alq$_3$)와 bis(10-hydroxybenzo(h)quinolinato)beryllium (Bebq$_2$)를 사용하였으며 HTL 로 N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD)를 사용하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.409-417
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• 2003

We have studied electrical properties and luminous efficiency of organic light-emitting diodes(OLEDs) with different buffer layer and cathodes in a temperature range of 10 K and 300 K. Four different device structures were made. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinato) aluminum(III) (Alq$_3$) as an electron transport and omissive layer, and poly(3,4-ethylenedioxythiophene) :poly (styrenesulfonate) (PEDOT:PSS ) as a buffer layer. And LiAl was used as a cathode. Among the devices, the ITO/PEDOT:PSS/TPD/Alq$_3$/LiAl structure has a low energy-barrier height for charge injection and show a good luminous efficiency. We have got a highly efficient and low-voltage operating device using the conductive PEDOT:PSS and low work-function LiAl. From current-voltage characteristics with temperature variation, conduction mechanisms are explained SCLC (space charge limited current) and tunneling one. We have also studied energy barrier height and luminous efficiency at various temperature.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1879-1883
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• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.346-349
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• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

• Proceedings of the Korean Geotechical Society Conference
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• 2005.10a
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• pp.698-705
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• 2005

This study contains actual scaled site experiments on mediation factors affecting ultimate pulling force of the buoyancy resisting anchor which is installed underground water level suffering buoyancy force and breaking mechanism. Site buoyancy test selected the buoyancy acting site where acting buoyancy to the station structure since the stream and reservoir is neighboured to the vicinity ground and executed site experiments leading to variation of anchoring length, drilling diameter and tendon diameter at the weathered rock ground. The test result showed that pulling force getting increased more and more proportionate to increase of anchoring length, drilling diameter and tendon diameter, and as a result of analysis for correlations between anchoring length-ultimate limited load and drilling diameter-ultimate load (on the basis of 254mm settlement), modulus of correlation showed very high relation 0.9 and 0.99 respectively and correlation formular showed the limited load is increasing proportionate to cubic meters of anchoring length as well as the ultimate load proportionate to alignment of drilling diameter. It is also showed that limited load increased about 42.5% from 392kN to 559kN as a result of change the tendon diameter to 36mm and 50mm.