• Title/Summary/Keyword: N-drift

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Seed Dispersal by Water, Wind, Birds, and Bats in the Caliraya Watershed, Laguna

  • Giancarlo Pocholo L. Enriquez;Lillian Jennifer V. Rodriguez
    • Proceedings of the National Institute of Ecology of the Republic of Korea
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    • v.4 no.1
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    • pp.28-42
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    • 2023
  • Seed dispersal supports community structure, maintains genetic connectivity across fragmented landscapes, and influences vegetation assemblages. In the Philippines, only two seed dispersal studies have compared different dispersal agents. We examined the seed dispersal patterns of water, wind, birds, and bats in the Caliraya Watershed, Philippines. We aimed to determine the floral species that were dispersed and how the forest characteristics influenced seed dispersal. By running seed rain traps and drift litter collection from March to June 2022, we analyzed 14,090 seeds in a privately owned study site within the watershed. Water did not exclusively disperse any species and acted as a secondary disperser. Seed density (seeds/trap) was significantly higher for bird-dispersed (n=166) and bat-dispersed (n=145) seeds than for wind-dispersed (n=79) seeds (One-way analysis of variance [ANOVA]: F2,87=16.21, P<0.0001). Species number (species/trap) was significantly higher for bird-dispersed (n=3.7) and bat-dispersed (n=3.9) seeds than for wind-dispersed (n=0.2) seeds (One-way ANOVA: F2,87 =16.67, P<0.0001). Birds dispersed more species because they are more diverse and access a wider variety of fruits, unlike bats. Birds and bats target different fruits and provide separate seed dispersal services. Generalized linear model analyses revealed that the number and basal area of fleshy fruit trees most strongly influenced the bird seed dispersal patterns. Therefore, we recommend a three-way approach to restoration efforts in the Caliraya Watershed: (1) ensure the presence of fleshy fruit trees in restoration zones, (2) assist the establishment of mid-successional and wind-dispersed trees, and (3) intensify the conservation efforts for both flora and faunal diversity.

$H_2$ sensor for detecting hydrogen in DI water using Pd membrane (수중 수소 감지를 위한 MISFET형 센서제작과 그 특성)

  • Cho, Yong-Soo;Son, Seung-Hyun;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.9 no.2
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    • pp.113-119
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    • 2000
  • In this work, Pd/Pt gate MISFET sensor using Pd membrane was fabricated to detect the hydrogen in DI water. A differential pair-type was used to minimize the intrinsic voltage drift of the MISFET. To avoid hydrogen induced drift of the sensor, the silicon dioxide/silicon nitride double layer was used as the gate insulator of the FET's. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pd/Pt double metal layer was deposited on the gate insulator. For this type of application sensors need to be isolated from the DI water, and a Pd membrane was used to separate the sensor from the DI water. The output voltage change due to the variation of hydrogen concentration is linear from 100ppm to 500 ppm.

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Effects of uncertainties on seismic behaviour of optimum designed braced steel frames

  • Hajirasouliha, Iman;Pilakoutas, Kypros;Mohammadi, Reza K.
    • Steel and Composite Structures
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    • v.20 no.2
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    • pp.317-335
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    • 2016
  • Concentrically braced steel frames (CBFs) can be optimised during the seismic design process by using lateral loading distributions derived from the concept of uniform damage distribution. However, it is not known how such structures are affected by uncertainties. This study aims to quantify and manage the effects of structural and ground-motion uncertainty on the seismic performance of optimum and conventionally designed CBFs. Extensive nonlinear dynamic analyses are performed on 5, 10 and 15-storey frames to investigate the effects of storey shear-strength and damping ratio uncertainties by using the Monte Carlo simulation method. For typical uncertainties in conventional steel frames, optimum design frames always exhibit considerably less inter-storey drift and cumulative damage compared to frames designed based on IBC-2012. However, it is noted that optimum structures are in general more sensitive to the random variation of storey shear-strength. It is shown that up to 50% variation in damping ratio does not affect the seismic performance of the optimum design frames compared to their code-based counterparts. Finally, the results indicate that the ground-motion uncertainty can be efficiently managed by optimizing CBFs based on the average of a set of synthetic earthquakes representing a design spectrum. Compared to code-based design structures, CBFs designed with the proposed average patterns exhibit up to 54% less maximum inter-storey drift and 73% less cumulative damage under design earthquakes. It is concluded that the optimisation procedure presented is reliable and should improve the seismic performance of CBFs.

Design of Compensated Digital Interface Circuits for Capacitive Pressure Sensor (용량형 압력센서용 디지탈 보상 인터페이스 회로설계)

  • Lee, Youn-Hee;Sawada, Kouji;Seo, Hee-Don;Choi, Se-Gon
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.63-68
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    • 1996
  • In order to implement the integrated capacitive pressure sensors, which contains integrated interface circuits to detect the electrical output signal, several main factors that have a bad effect on the characteristics of sensors must be improved, such as parasitic capacitance effects, temperature/thermal drift, and the leakage current of a readout circuitry. This paper describes the novel design of the dedicated CMOS readout circuitry that is consists of two capacitance to frequency converters and 4 bit digital logic compensating circuits. Dividing the oscillation frequency of a sensing sensor by that of reference sensor, this circuit is designed to eliminate the thermal/temperature drift and the effect of the leakage currents, and to access a digital signals to obtain a high signal-to-noise(S/N)ratio. Therefore, the resolution of this circuit can be increased by increasing the number of the digital bits. Digital compensated circuits of this circuits, except for the C-F converters, are fabricated on a FPGA chip, and fundamental performance of the circuits are evaluated.

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Strengthening of the panel zone in steel moment-resisting frames

  • Abedini, Masoud;Raman, Sudharshan N.;Mutalib, Azrul A.;Akhlaghi, Ebrahim
    • Advances in Computational Design
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    • v.4 no.4
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    • pp.327-342
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    • 2019
  • Rehabilitation and retrofitting of structures designed in accordance to standard design codes is an essential practice in structural engineering and design. For steel structures, one of the challenges is to strengthen the panel zone as well as its analysis in moment-resisting frames. In this research, investigations were undertaken to analyze the influence of the panel zone in the response of structural frames through a computational approach using ETABS software. Moment-resisting frames of six stories were studied in supposition of real panel zone, different values of rigid zone factor, different thickness of double plates, and both double plates and rigid zone factor together. The frames were analyzed, designed and validated in accordance to Iranian steel building code. The results of drift values for six stories building models were plotted. After verifying and comparing the results, the findings showed that the rigidity lead to reduction in drifts of frames and also as a result, lower rigidity will be used for high rise building and higher rigidity will be used for low rise building. In frames with story drifts more than the permitted rate, where the frames are considered as the weaker panel zone area, the story drifts can be limited by strengthening the panel zone with double plates. It should be noted that higher thickness of double plates and higher rigidity of panel zone will result in enhancement of the non-linear deformation rates in beam elements. The resulting deformations of the panel zone due to this modification can have significant influence on the elastic and inelastic behavior of the frames.

Polar Mesospheric Summer Echo Characteristics in Magnetic Local Time and Height Profiles

  • Young-Sook Lee;Ram Singh;Geonhwa Jee;Young-Sil Kwak;Yong Ha Kim
    • Journal of Astronomy and Space Sciences
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    • v.40 no.3
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    • pp.101-111
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    • 2023
  • We conducted a statistical study of polar mesospheric summer echoes (PMSEs) in relation to magnetic local time (MLT), considering the geomagnetic conditions using the K-index (or K). Additionally, we performed a case study to examine the velocity profile, specifically for high velocities (≥ ~100 m/s) varying with high temporal resolution at high K-index values. This study utilized the PMSE data obtained from the mesosphere-stratosphere-troposphere radar located in Esrange, Sweden (63.7°N, 21°E). The change in K-index in terms of MLT was high (K ≥ 4) from 23 to 04 MLT, estimated for the time PMSE was present. During the near-midnight period (0-4 MLT), both PMSE occurrence and signal-to-noise ratio (SNR) displayed an asymmetric structure with upper curves for K ≥ 3 and lower curves for K < 3. Furthermore, the occurrence of high velocities peaked at 3-4 MLT for K ≥ 3. From case studies focusing on the 0-3 MLT period, we observed persistent eastward-biased high velocities (≥ 200 m/s) prevailing for ~18 min. These high velocities were accompanied with the systematic motion of profiles at 85-88 km, including large shear formation. Importantly, the rapid variations observed in velocity could not be attributed to neutral wind effects. The present findings suggest a strong substorm influence on PMSE, especially in the midnight and early dawn sectors. The large zonal drift observed in PMSE were potentially energized by local electromagnetic fields or the global convection field induced by the electron precipitation during substorms.

Mean energy of electrons in $SF_6$-Ar Mixtures Gas ($SF_6$-Ar 혼합기체(混合氣體)의 전자(電子) 평균(平均)에너지)

  • Kim, Sang-Nam;Seong, Nak-Jin
    • Proceedings of the KIEE Conference
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    • 2003.07e
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    • pp.75-78
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    • 2003
  • Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30\sim300$[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The transport coefficients for electrons in (0.2[%])$SF_6$-Ar and (0.5[%]$SF_6$ - Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

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Mixed-mode simulation of switching characteristics of SiC DMOSFETs (Mixed-mode 시뮬레이션을 이용한 SiC DMOSFET의 스위칭 특성 분석)

  • Kang, Min-Seok;Choi, Chang-Yong;Bang, Wook;Kim, Sang-Chul;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.37-38
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    • 2009
  • SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

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Study of Littoral Sand Migration Along the West Coast of Ahnmyeon Island, Korea

  • Park, Yong Ahn
    • 한국해양학회지
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    • v.10 no.1
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    • pp.1-6
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    • 1975
  • A marine geological investigation of the glass sand deposit in the beach along the west coast of Ahnmyeon Island, South Chung Cheong Province, Korea was carried out to solve the problen of sand material migration, textural properties of the sands and the glass sand reserve for future exploitation. Several bos coring analyses by means of the internal sedimentary structure.i.e., cross- stratification show significantly that most sands are moving and accumulation along the mean vector direction of $N20^{\circ}E-N60^{\circ}$ E in the area investigated. The average mean size of the sand sediments in the area studied ranges from 0.212mm to 0.275mm. The mechanism of sand migration in the area is considered to be interplay between longshore drift and flood tidal current. The sorting value of the sands ranges from 0.24 to 0.50. Therefore, these sand sediments are characteristic to be "well sorted". The average chemical composition of the glass sand in the area is the following: $SiO\_2$:-90.8%, $Al_2O_3$: -2.18%, $Fe_2O_3$:-0.73%, CaO:-1.79. The binocular microscope examination of the sands show that most of the sands are characteristically ice- clear quartz in mineral composition and their count percentage is mostly 92% or 96%.

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Study on the pn Junction Device Using the POCl3 Precursor (POCl3를 사용한 pn접합 소자에 관한 연구)

  • Oh, Teresa
    • Journal of the Korean Vacuum Society
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    • v.19 no.5
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    • pp.391-396
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    • 2010
  • The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor to research the characteristic of interface at pn junction. The sheet resistance was decreased in accordance with the increasing the diffusion process time for n-type doping on p-type Si wafer. The electron affinity at the interface in the pn junction was decreased with increasing the amount of n-type doping and the sheet resistance also decreased. Consequently, the drift current due to the generation of EHP increased because of low potential barrier. The efficiency and fill factor were increased at the solar cell with increasing the diffusion process time.