• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1566-1567
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• 2006

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300$[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight (TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.88-93
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• 1999

This paper describes the electron transport characteristics in $SiH_4$ gas calculated for the range of E/n:0.5~300(Td) and Pressure:0.5, 1, 2.5(Torr) by the Monte carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the reported results. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal and transverse diffusion coefficients, the electron ionization coefficients, characteristics energy and the electron energy distribution function. The electron energy distributions function has been analysed in $SiH_4$ at E/N: 30, 50(Td)for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Monte carlo simulation and Boltzmann equation have been compared with experimental data by ohmori ad Pollock.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• 조명전기설비학회논문지
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• 제22권8호
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• pp.104-108
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• 2008

플라즈마 현상의 정량적 이해를 위해서는 원자나 분자기체가 가지고 있는 정확한 전자충돌단면적과 그 전자수송 계수의 값을 필요로 한다. 본 연구에서 사용하고 있는 Kr과 Xe 원자기체는 PDP와 무전각램프 등 다양한 산업 응용분야에 이용되고 있다. 따라서 2항 근사 볼츠만 해석에 의해 기체압력 1[torr]의 조건에 $0.001{\sim}500$[Td]의 광범위한 E/N에서 순수 Kr과 Xe 원자기체의 전자이동속도 W, 종 횡축확산계수 $ND_L$과 $ND_T$, 전리계수 $\alpha$/N의 전자수송 계수를 계산하고 물성 해석하였다.

• 대한전기학회논문지
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• 제43권5호
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• pp.779-788
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• 1994

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.403-409
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• 2007

In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.

• 한국해양학회지
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• 제4권1호
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• pp.9-16
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• 1969

금번 국내최대의 포항종합제철공장의 건립에 즈으하여 국내최대의 새로운 항만이 영일만내에 건설되고 있다. 항만의 건설의 외곽시설인 방파제 방사제 및 항입구의 배치계획에 기초자료가 된느 여러 조사업무중의 하나로 당 해역의 표사의 이동에 대한 조사가 실시되었다. 항만건설해역은 형산강과 냉천 사이의 해역으로써 이들 하천으로 부터의 유사가 표사이동에 미치는 영양도 아울러 조사되었으며, 표사의 공급원, 표사의 이동방향을 알기 위하여 광범위한 해역에 걸쳐 조사가 진행되었다. 표사는 해안을 따라 어떤 폭을 갖은 해변에서 발생하는 저질의 이동현상을 말하며, 하천의 유사와 마찬가지로 유체에 의한 물질의 운반작용이지만 그 운반기구는 하천의 유사에 비하여 대단히 복잡하여서 그의 정확한 선택파악은 대단히 어려운 문제이다. 최근 이와 같은 조사에 방사성물질이 추적자로 사용되고 있으며, 종래 사용되던 간접적인 방법에 비하여 비교적 간단히 그리고 직접적으로 표사의 실태를 파악할 수 있으미 확인되고 있다. 금번 조사에서는 방사성 추적자로서 Co-60을 사용하였다.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1252-1257
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients by using two-term approximation of Boltzmann equation. But there is difference between the result of the two-term approximation of the Boltzmann equation and experiments in pure CF$_4$ molecular gas and in CF$_4$+Ar gas mixture. Therefore, In this paper, we calculated the electron drift velocity (W) in pure CF$_4$ molecular gas and CF$_4$+Ar gas mixture (1 %, 5 %, 10 %) for range of E/N values from 0.17～300 Td at the temperature was 300 K and pressure was 1 Torr by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation have been compared with each other for a range of E/N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1179-1182
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in $CF_4+Ar$ gas mixture by using two-term approximation of Boltzmann equation. but there is difference between the result of the two-term and the multi-term approximation of the Boltzmann equation in $CF_4$ gas. Therefore, in this paper, we calculated the electron drift velocity (W) in $CF_4+Ar$ gas mixture for range of E/N values from $0.01\sim500[Td}$ at the temperature was 300[K] and pressure was 1[Torr] by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation has been compared with each other for a range of E/N.