• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• 대한수학회지
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• 제58권3호
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• pp.609-631
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• 2021

Let C[0, T] denote a generalized analogue of Wiener space, the space of real-valued continuous functions on the interval [0, T]. Define $Z_{\vec{e},n}$ : C[0, T] → ℝⁿ⁺¹ by $$Z_{\vec{e},n}(x)=\(x(0),\;{\int}_0^T\;e_1(t)dx(t),{\cdots},\;{\int}_0^T\;e_n(t)dx(t)\)$$, where e₁,…, e_n are of bounded variations on [0, T]. In this paper we derive a simple evaluation formula for Radon-Nikodym derivatives similar to the conditional expectations of functions on C[0, T] with the conditioning function $Z_{\vec{e},n}$ which has an initial weight and a kind of drift. As applications of the formula, we evaluate the Radon-Nikodym derivatives of various functions on C[0, T] which are of interested in Feynman integration theory and quantum mechanics. This work generalizes and simplifies the existing results, that is, the simple formulas with the conditioning functions related to the partitions of time interval [0, T].

• 한국재료학회지
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• 제15권6호
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• pp.382-387
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• 2005

Polyvinylidene fluoride (PVDF) surface was irradiated and became superhydrophilic by low energy (180 eV) and high flux $(\~10^{15}/cm{\cdot}s)$ ion beam. As an ion source, a closed electron Hall drift thruster of $\phi=70mm$ outer channel size without grid was adopted. Ar, $O_2$ and $N_2O$ were used for source gases. When $N_2O^+$ and $O_2^+$ reactive gas ion beam were irradiated with the ion fluence of $5\times10^{15}/cm^2$, the wetting angle for deionized water was drastically dropped from $61^{\circ}\;to\;4^{\circ}\;and\;2^{\circ}$, respectively. Surface energy was also increased up to from 44 mN/m to 81 mN/m. Change of chemical component in PVDF surface was analyzed by x-ray photoelectron spectroscopy. Such a great increase of the surface energy was intimately related with the increase of hydrophilic group component in reactive ion irradiated PVDF surfaces. By using an atomic force microscopy, the root-mean-square of surface roughness of ion irradiated PVDF was not much altered compared to that of pristine PVDF.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.696-699
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• 1999

The electron transport coefficients in $SF_6+N_2$ gas is analysed in range of E/N values from 100~900(Td) by a Monte Carlo simulation and Boltzmann method, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N.

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.107-110
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• 2009

In this study, the Hall effect has been studied in n-GaAs samples characterized by V/IIl growth ratios of 25, 50 and 100 and prepared by metal organic chemical vapor deposition. For the Hall effect measurements, the grown samples were cut to a size of 1${\times}$1 cm. The measurements were carried out at room temperature, using Indium contact metal at the four corners of the samples. According to the experimental results, the Schottky effect was not ovservation. Also for the n-GaAs sample of V/Ill 100 ratio the electron drift velocity was very high.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1996년도 추계학술발표회논문집
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• pp.134-139
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• 1996

The electron energy distributions function were analysed in sulphur hexaflouride at E/N : 500~800(Td) for a case of non-equilibrium ion in the mean electron energy. This paper describes the electron transport characteristics in SF$_{6}$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.n.

• Journal of Electrical Engineering and Technology
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• 제10권4호
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• pp.1734-1737
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• 2015

Insulating characteristics of Cl₂-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)_lim, for these binary gas mixtures were also derived and compared with those of the pure SF₆ gas.

• 한국막학회:학술대회논문집
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• 한국막학회 1994년도 추계 총회 및 학술발표회
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• pp.17-19
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• 1994

고분자 분리막의 구조가 투과율에 미치는 영향에 대해서는 지금까지 많은 연구가 행하여져 왔지만, 분자구조가 투과경로에 미치는 영향에 대한 연구는 아직 미미하며, black box approach만으로는 투과경로를 기술하기 어렵다. Impedance spectrowcopy는 막에 alternating electric field를 가해줌으로써 얻어지는 전류와 전압의 상관관계를 이용하여, 막내의 전해질의 투과에 대한 정보를 얻어내는 기기로써, dielectric loss spectra를 분석하면 투과물의 투과경로에 대한 정보도 얻을 수 있다. 전해질을 포함한 막의 dielectric loss ($\varepsilon"$) spectra는 다음의 식과 같이 두 부분으로 나뉘어 진다. $\varepsilon" = \varepsilon_{ac}" + \varepsilon_{dc}"$ (1) $\varepsilon_{dc}"$는 막을 통한 이온의 투과에 관계된 항이며, $\varepsilon_{ac}"$는 강한 dipole의 relaxation에 의해 나타나는 항이다. $\varepsilon_{dc}"$는 다음의 실험식에 의해 잘 기술되어진다. $\varepsilon_{dc}" = A\omega^{-n}$ 0

• 한국조명전기설비학회지:조명전기설비
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• 제13권2호
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• pp.227-227
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• 1999

The electron energy distributions function were analysed in sulphur hexaflouride at E/N : 500~800(Td) for a case of non-equilibrium region in the mean electron energy. This paper describes the electron transport characteristics in $SF_6$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters. The results gained that the value of ane1ctron swarm parameter such as the e1ectron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.

• 전기전자학회논문지
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• 제8권1호
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• pp.152-159
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• 2004

본 연구에서는 Bi-DMOS 기술을 이용하여 SMPS용 고내압 스윗칭 전력소자 내장형 one-chip PWM IC를 설계하였다. 기준전압회로는 다양한 온도와 공급전압의 변화에도 일정한 전압(5V)을 발생시킬 수 있도록 설계하였고, 오차 증폭기의 경우, 높은 dc gain$({\simeq}65.7db)$, unity frequency$({\simeq}189Khz)$, 적절한 $PM({\simeq}76)$를 가지면서 높은 입력저항을 갖도록 설계하였다. 비교기는 2단 구성으로 설계를 하였고, 삼각파 발생회로 경우, 외부 저항과 캐패시터를 이용해서 발진 주파수(20K), output swing 폭(3.5V)을 갖는 삼각파를 발생시켰다. 스윗칭 파워소자는 SOI 기판을 사용하고, 확장 드레인 영역의 길이와 도핑 농도를 적절히 조정, 350V급 내압을 갖는 n-LDMOSFET을 설계 하였다. 최종적으로, layout은 각 소자에 대한 디자인 룰(2um 설계 룰)을 설정하였고, Bi-DMOS 공정 기술을 바탕으로 PWM IC 회로와 n-LDMOSFET one-chip IC를 설계하였다.